HIGH VOLTAGE MOSFET, TO-220 CASE Search Results
HIGH VOLTAGE MOSFET, TO-220 CASE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GC331AD7LQ103KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC331CD7LP683KX19L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC332QD7LP104KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC355DD7LP684KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GR331AD7LP333KW01D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose |
HIGH VOLTAGE MOSFET, TO-220 CASE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, |
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UF830 O-220 O-220F UF830L UF830-TA3-T UF830L-TA3-Tat QW-R502-046 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching |
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UF630 O-220 O-220F O-220F1 O-220F2 O-262 O-251 O-252 QW-R502-049 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, |
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UF630 O-251 O-220 O-220F O-220F1 O-252 O-220 O-220F1 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching |
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UF830 O-220 O-220F1 O-220F2 O-252 O-251 O-262 O-220F O-263 QW-R502-046 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220 DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche |
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O-220 O-220F O-220F3 O-251 O-252 O-220F1 QW-R502-589 | |
utc 5n60l
Abstract: 5N60L 5N60L-TF2-T 5N60L-TN3-R 5N60 5N60G
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O-220 O-220F O-220F1 O-220F2 QW-R502-065 utc 5n60l 5N60L 5N60L-TF2-T 5N60L-TN3-R 5N60 5N60G | |
utc 4n60l
Abstract: 4N60L-TA3-T 4n60l 4n60e mosfet 4n60
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O-220 O-220F O-220F1 QW-R502-061 utc 4n60l 4N60L-TA3-T 4n60l 4n60e mosfet 4n60 | |
4n65
Abstract: UTC4N65 mosfet 4n65 4n65l
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O-220 O-220F O-220F1 QW-R502-397 4n65 UTC4N65 mosfet 4n65 4n65l | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220 DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged |
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O-220 O-220F QW-R502-340 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high |
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6N60-P O-220F O-220 6N60-P O-220F1 O-220F2 O-263 O-251 O-252 QW-R502-969 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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O-220 O-220F QW-R502-061 | |
2N60G
Abstract: 2N60 2N60 TO-251 UTC 2N60L TO-220F utc 2n60l
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O-220 O-220F O-220F1 O-262 O-251 O-252 QW-R502-053 2N60G 2N60 2N60 TO-251 UTC 2N60L TO-220F utc 2n60l | |
MTP2N60
Abstract: mtp2n
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O-220 MTP2N60 MTP2N60 mtp2n | |
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N45 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: |
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MTP3N45 O-220 | |
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mtp2n
Abstract: mtp2n55
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O-220 MTP2N55 mtp2n mtp2n55 | |
mtp2n
Abstract: mtp2n40
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O-220 MTP2N40 mtp2n mtp2n40 | |
mtp2n
Abstract: mtp2n35
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O-220 MTP2N35 mtp2n mtp2n35 | |
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP5N40E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: |
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O-220 MTP5N40E | |
MTP1N60
Abstract: mtp1n
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O-220 MTP1N60 MTP1N60 mtp1n | |
MTP1N55
Abstract: mtp1n
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O-220 MTP1N55 MTP1N55 mtp1n | |
AN569
Abstract: NTB60N06L NTB60N06LT4 NTP60N06L
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NTP60N06L, NTB60N06L O-220 tpv10 r14525 NTP60N06L/D AN569 NTB60N06L NTB60N06LT4 NTP60N06L | |
75n06
Abstract: mosfet 75n06 p 75n06 NTB75N06 NTB75N06T4 NTP75N06 NTP75N06-D
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NTP75N06, NTB75N06 O-220 tpv10 NTP75N06/D 75n06 mosfet 75n06 p 75n06 NTB75N06 NTB75N06T4 NTP75N06 NTP75N06-D | |
stm2n85Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 772 283-4500 FAX: (772) 286-8914 Website: http://www.semi-tech-inc.com Email: data1@semi-tech-inc.com TYPE: STM2N85/220 CASE OUTLINE: TO-220AB HIGH VOLTAGE N-CHANNEL POWER MOSFET |
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STM2N85/220 O-220AB stm2n85 | |
IRF820Contextual Info: IRF820 N-CHANNEL 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET TYPE IRF820 • ■ ■ ■ ■ VDSS RDS on ID 500 V <3Ω 4A TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED |
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IRF820 O-220 IRF820 |