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    5N60A Search Results

    5N60A Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge 5N60A
    		AK Semiconductor 5A600V N-channel enhancement mode MOSFET with 1.67 ohm typical RDS(on) at 10V VGS, available in TO-220AB, TO-220F, TO-263, TO-252, and TO-251 packages, featuring high dv/dt capability and 100% avalanche tested performance. Original PDF
    badge NCEAP025N60AG
    		NCEPOWER NCEAP025N60AG is an Automotive N-Channel Super Trench II Power MOSFET with 60 V drain-source voltage, 185 A continuous drain current, 2.0 mΩ typical RDS(on) at VGS = 10 V, and 175 °C operating junction temperature. Original PDF
    badge 35N60A
    		AK Semiconductor 35A 600V N-channel enhancement mode MOSFET with low on-resistance of 0.13 ohms typical at 10V gate voltage, high switching speed, and TO-247 package for general power switching applications. Original PDF
    badge CWS15N60AF
    		Wuhan Xinyuan Semiconductor Co Ltd 600V N-Channel Super Junction MOSFET CWS15N60A with 280 mΩ RDS(on), 15A continuous drain current, fast switching, low gate charge, and 100% avalanche tested for high efficiency power applications. Original PDF
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    5N60A Price and Stock

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    Micro Commercial Components MCU05N60A-TP

    MOSFET N-CH 600V 4.5A DPAK
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    DigiKey () MCU05N60A-TP Digi-Reel 14,027 1
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    MCU05N60A-TP Cut Tape 14,027 1
    • 1 $1.61
    • 10 $1.02
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    MCU05N60A-TP Tape & Reel 10,000 2,500
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    Mouser Electronics MCU05N60A-TP
    • 1 $1.61
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    Rochester Electronics LLC SKB15N60ATMA1

    IGBT NPT 600V 31A TO263-3-2
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    DigiKey SKB15N60ATMA1 Bulk 6,373 176
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    Infineon Technologies AG SKB15N60ATMA1

    IGBT NPT 600V 31A TO263-3-2
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    Rochester Electronics SKB15N60ATMA1 6,373 1
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    5N60A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5N60B

    Abstract: 5N60 5n60-b 5N60A utc 5n60l 5N60 datasheet 5N60L
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 1 „ DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-252 O-251 QW-R502-065 5N60B 5N60 5n60-b 5N60A utc 5n60l 5N60 datasheet 5N60L PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		5N60L QW-R502-065 PDF

    8N65

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


    Original     		IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65 PDF

    5n60b

    Abstract: 5N60A 5n60-b
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION TO-220 The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-220 O-220F 5N60L QW-R502-065 5n60b 5N60A 5n60-b PDF

    5N60A

    Abstract: 5N60B 5N60 5n60 mosfet UTC5n60 utc 5n60l 5N60 datasheet 100SU MOSFET having TO-252 PAckage 5N60L
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		QW-R502-065 5N60A 5N60B 5N60 5n60 mosfet UTC5n60 utc 5n60l 5N60 datasheet 100SU MOSFET having TO-252 PAckage 5N60L PDF