HIGH VOLTAGE ED DIODE Search Results
HIGH VOLTAGE ED DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL8211MTY/883B |
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Programmmable High Accuracy Voltage Detecor |
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| ICL8212MTY/B |
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Programmmable High Accuracy Voltage Detecor |
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| UDS2983R/B |
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UDS2983 - High Voltage, High Current Source Driver |
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| UDS2981R/B |
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UDS2981 - High Voltage, High Current Source Driver |
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| LM106H/883 |
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LM106 - Voltage Comparator |
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HIGH VOLTAGE ED DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CDST-56-G
Abstract: CDST-70-G CDST-99-G sk sot-23
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OCR Scan |
CDST-99-G/ 200mA OT-23, MIL-STD-750, CDST-99-G CDST-70-G CDST-56-G OT-23 QW-B0002 CDST-56-G sk sot-23 | |
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Contextual Info: GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t |
Original |
GI1-1200GP GI1-1600GP DO-204AC DO-15) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 | |
smd diode UjContextual Info: COAICHII» Small Signal Schottky Diodes SMQDIodes S pocialisi CDBH3-54/S/C/A-G Reverse Voltage: 30 Volts Forward Current: 200mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching a p p lica tio n , circuit pro tectio n . |
OCR Scan |
CDBH3-54/S/C/A-G 200mA OT-23, MIL-STD-750, OT-523 QW-BA010 CDBH3-54/S/C/A-G) smd diode Uj | |
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Contextual Info: COMCHIP Small Signal Schottky Diodes S M D D IO D E S P E C IA L IS T CDBV3-00340S/C/A-G Reverse Voltage: 40 Volts Forward Current: 30mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching a p p lica tio n , circuit |
OCR Scan |
CDBV3-00340S/C/A-G OT-323, MIL-STD-750, 00340S 00340C 0340A OT-323 CDBV3-00340S/C/A-G) QW-BA004 | |
QW-BA005Contextual Info: COMCHIP Small Signal Schottky Diodes M D D IO D E S P E C IA L IS T CDBV3-40/S/C/A-G Reverse Voltage: 40 Volts Forward Current: 200mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching a p p lica tio n , circuit |
OCR Scan |
CDBV3-40/S/C/A-G 200mA OT-23, MIL-STD-750, OT-323 QW-BA005 QW-BA005 | |
1N4586GPContextual Info: 1N4383GP thru 1N4385GP, 1N4585GP & 1N4586GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* |
Original |
1N4383GP 1N4385GP, 1N4585GP 1N4586GP DO-204AC DO-15) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 1N4586GP | |
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Contextual Info: GI250-1 thru GI250-4 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation |
Original |
GI250-1 GI250-4 MIL-S-19500 DO-204AL DO-41) 2002/95/EC 2002/96/EC DO-204AL, 08-Apr-05 | |
20E-3Contextual Info: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation |
Original |
GP02-20 GP02-40 DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC DO-204AL, 08-Apr-05 20E-3 | |
GP02-40
Abstract: 20E-3 DO-204AL GP02-20 JESD22-B102D J-STD-002B
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Original |
GP02-20 GP02-40 MIL-S-19500 DO-204AL DO-41) 2002/95/EC 2002/96/EC 08-Apr-05 GP02-40 20E-3 DO-204AL JESD22-B102D J-STD-002B | |
GI250-4
Abstract: DO-204AL GI250-1 JESD22-B102D J-STD-002B
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Original |
GI250-1 GI250-4 MIL-S-19500 DO-204AL DO-41) 2002/95/EC 2002/96/EC 08-Apr-05 GI250-4 DO-204AL JESD22-B102D J-STD-002B | |
DO-204AL
Abstract: GI250-1 GI250-4 JESD22-B102D J-STD-002B
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Original |
GI250-1 GI250-4 MIL-S-19500 DO-204AL DO-41) 2002/95/EC 2002/96/EC 19-May-06 DO-204AL GI250-4 JESD22-B102D J-STD-002B | |
GP02-40
Abstract: 20E-3 DO-204AL GP02-20 JESD22-B102D J-STD-002B
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Original |
GP02-20 GP02-40 MIL-S-19500 DO-204AL DO-41) 2002/95/EC 2002/96/EC 08-Apr-05 GP02-40 20E-3 DO-204AL JESD22-B102D J-STD-002B | |
BZX85Contextual Info: Te m ic BZX85C. TELEFUNKEN Semiconductors Silicon Epitaxial Planar Z-Diodes Features • Sharp ed ge in reverse characteristics • L ow reverse current • L ow noise • Very high stability • A vailable with tighter tolerances Applications W9.169 Voltage stabilization |
OCR Scan |
BZX85C. BZX85 | |
1N3611GP
Abstract: 1N3614GP 1N3957GP DO-204AL JESD22-B102D J-STD-002B
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Original |
1N3611GP 1N3614GP 1N3957GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 1N3957GP DO-204AL JESD22-B102D J-STD-002B | |
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GP08D
Abstract: GP08B DO-204AL GP08A GP08J JESD22-B102D J-STD-002B
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Original |
GP08A GP08J DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 GP08D GP08B DO-204AL GP08J JESD22-B102D J-STD-002B | |
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Contextual Info: 1N4245GP thru 1N4249GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat *Glass Encapsulation |
Original |
1N4245GP 1N4249GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 | |
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Contextual Info: 1N4245GP thru 1N4249GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat *Glass Encapsulation |
Original |
1N4245GP 1N4249GP MIL-S-19500 2002/95/EC 2002/96/EC DO-204AL, J-STD-002B JESD22-B102D 08-Apr-05 | |
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Contextual Info: GP08A thru GP08J Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat *Glass Encapsulation |
Original |
GP08A GP08J MIL-S-19500 2002/95/EC 2002/96/EC DO-204AL DO-41) 08-Apr-05 | |
1N4245GP
Abstract: 1N4249GP DO-204AL JESD22-B102D J-STD-002B
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Original |
1N4245GP 1N4249GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 1N4249GP DO-204AL JESD22-B102D J-STD-002B | |
1N4245GP
Abstract: 1N4249GP DO-204AL JESD22-B102 J-STD-002
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Original |
1N4245GP 1N4249GP MIL-S-19500 DO-204AL DO-41) 2002/95/EC 2002/96/EC 18-Jul-08 1N4249GP DO-204AL JESD22-B102 J-STD-002 | |
DO-204AL
Abstract: GP08A GP08J JESD22-B102 J-STD-002 gp08d
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Original |
GP08A GP08J DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 DO-204AL GP08J JESD22-B102 J-STD-002 gp08d | |
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Contextual Info: GP08A thru GP08J Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat *Glass Encapsulation |
Original |
GP08A GP08J DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC DO-204AL, 08-Apr-05 | |
1N3612GP-E3/73
Abstract: 1N3611GP 1N3614GP 1N3957GP DO-204AL JESD22-B102D J-STD-002B
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Original |
1N3611GP 1N3614GP 1N3957GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 1N3612GP-E3/73 1N3957GP DO-204AL JESD22-B102D J-STD-002B | |
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Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation |
Original |
GP10A GP10Y DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 | |