HIGH VOLTAGE ED DIODE Search Results

CDST-56-G

Abstract: CDST-70-G CDST-99-G sk sot-23
Contextual Info: COAICHII» Small Signal Switching Diodes SMQDIodes S pocialisi CDST-99-G/ 70-G/ 56-G Reverse Voltage: 70 Volts Forward Current: 200mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching. High m ounting capab ility, strong surge

CDSH3-221-G

Contextual Info: COAICHII» Small Signal Switching Diodes SMO Diodes CDSH3-221-G Voltage: 20 Volts Average forward c u rre n t: 100 mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching. High m ounting capab ility, strong surge

MA690

Contextual Info: MA111 Fast Recovery Diodes FRD MA690 Silicon planer type Unit : mm 16.7±0.3 High reverse voltage VR 4.0 Fast reverse recovery time trr 14.0±0.5 ● 1.4±0.1 Solder Dip Low forward voltage V F ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

MA689

Contextual Info: MA111 Fast Recovery Diodes FRD MA689 Silicon planer type Unit : mm 16.7±0.3 High reverse voltage VR 5.5±0.2 4.0 Fast reverse recovery time trr 14.0±0.5 ● 1.4±0.1 Solder Dip Low forward voltage V F ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

Contextual Info: GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t

smd diode Uj

Contextual Info: COAICHII» Small Signal Schottky Diodes SMQDIodes S pocialisi CDBH3-54/S/C/A-G Reverse Voltage: 30 Volts Forward Current: 200mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching a p p lica tio n , circuit pro tectio n .

MA182

Abstract: MA2B182
Contextual Info: Switching Diodes MA2B182 MA182 Silicon epitaxial planar type Unit : mm φ 0.56 max. For high-voltage switching circuits, small power rectification 1 • Features 4.5 max. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

ED 05 Diode

Abstract: ED 03 Diode
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM25HG-24S DC current . 25A Repetitive peak reverse voltage . 1200V • trr Reverse recovery time . 0.3µs

ED 05 Diode

Abstract: ED 03 Diode
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM50HG-12S DC current . 50A Repetitive peak reverse voltage . 600V • trr Reverse recovery time . 0.2µs

ca3141e

Contextual Info: f ü H A R R CA3141 IS High-Voltage Diode Array For Commercial, Industrial & Military Applications August 1991 Features D escription • M a tch ed M on olithic C o n s tru c tio n - V p for Each D iode Pair M a tch ed to W ithin 0 .5 5 m V Typ at Ip = 1m A

Contextual Info: COMCHIP Small Signal Schottky Diodes S M D D IO D E S P E C IA L IS T CDBV3-00340S/C/A-G Reverse Voltage: 40 Volts Forward Current: 30mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching a p p lica tio n , circuit

QW-BA005

Contextual Info: COMCHIP Small Signal Schottky Diodes M D D IO D E S P E C IA L IS T CDBV3-40/S/C/A-G Reverse Voltage: 40 Volts Forward Current: 200mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching a p p lica tio n , circuit

circuit diagram induction heating

Abstract: CM400DY-66H nf 0036 diode HVIGBT induction heating circuit diagram
Contextual Info: MITSUBISHI HVIGBT MODULES CM400DY-66H ^,sr$^ed So^ev HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-66H • le .400A • V c e s . 3 3 0 0 V

LM2924J

Contextual Info: LM392/LM2924 Low Power Operational Amplifier/Voltage Comparator General Description Features The LM392 series consists of 2 independent building block circuits. One is a high gain, internally frequency compensat­ ed operational amplifier, and the other is a precision voltage

1N4586GP

Contextual Info: 1N4383GP thru 1N4385GP, 1N4585GP & 1N4586GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed*

Contextual Info: GI250-1 thru GI250-4 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation

20E-3

Abstract: DO-204AL GP02-20 GP02-40 JESD22-B102 J-STD-002
Contextual Info: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation

20E-3

Contextual Info: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation

GP02-40

Abstract: 20E-3 DO-204AL GP02-20 JESD22-B102D J-STD-002B
Contextual Info: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction ed* t n e Pat *Glass Encapsulation technique is covered by

GI250-4

Abstract: DO-204AL GI250-1 JESD22-B102D J-STD-002B
Contextual Info: GI250-1 thru GI250-4 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation

DO-204AL

Abstract: GI250-1 GI250-4 JESD22-B102D J-STD-002B
Contextual Info: GI250-1 thru GI250-4 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation

GP02-40

Abstract: 20E-3 DO-204AL GP02-20 JESD22-B102D J-STD-002B
Contextual Info: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction ed* t n e Pat *Glass Encapsulation technique is covered by

Lm192h

Abstract: LM192
Contextual Info: Corporation LM192/LM392, LM2924 Low Power Operational Amplifier/Voltage Comparator General Description Features The LM192 series consists of 2 independent building block circuits. One is a high gain, internally frequency compensat­ ed operational amplifier, and the other is a precision voltage

BZX85

Contextual Info: Te m ic BZX85C. TELEFUNKEN Semiconductors Silicon Epitaxial Planar Z-Diodes Features • Sharp ed ge in reverse characteristics • L ow reverse current • L ow noise • Very high stability • A vailable with tighter tolerances Applications W9.169 Voltage stabilization