HIGH VOLTAGE DIODE KV Search Results

ESJA18

Abstract: esja ESJA18-08
Contextual Info: ESJA18 8kV/5mA Outline Drawings HIGH VOLTAGE DIODE ESJA18 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min. Ultra high speed switching

Contextual Info: ESJC35-08 8.0kV/410mA HIGH VOLTAGE DIODE Outline ESJC35 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Drawings Cathode Mark Type Name, Lot No. Ø 4.0 Ø 0.78

Contextual Info: ESJA09 10kV,12kV/5mA Outline Drawings HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min.

19H12

Abstract: 10fls Scans-0017328
Contextual Info: 19H12 E DISWAN I9HI2 HIGH VACUUM DIODE Directly heated TENTATIVE GEN ERAL The 19H12 is an Inverse Damping Diode intended for use in radar transm itters to prevent voltage overswings. R A T IN G Filament Voltage volts 4-0 Vh Filament Cu rren t (amps) 120

SMD diode MARKING CODE 10

Abstract: SMD diode MARKING CODE 03 023 diode smd
Contextual Info: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDU5V0U RoHS Device Features 0603/SOD-523F - Uni-directional ESD protection 0.071 1.80 0.063(1.60) - Working voltage:5V - Surface mount package. 0.039(1.00) 0.031(0.80) - High component density. Mechanical data

SMD diode MARKING CODE E05

Abstract: SMD diode MARKING CODE 10 330 marking diode
Contextual Info: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDF5V0U-HF RoHS Device Halogen Free Features 1005/SOD-323F - Uni-directional ESD protection 0.102 2.60 0.095(2.40) - Working voltage:5V - Surface mount package. 0.051(1.30) 0.043(1.10) - High component density.

MARKING CODE a11 sot363

Abstract: POWER SUPPLY BOARD 94V
Contextual Info: TESDV5V0A Steering Diode Structure ESD Protection Array Small Signal Diode SOT-363 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —Protects four high speed I/O lines —Working Voltage : 5V

PS2601

Abstract: phototransistor microwaves PS2601L PS2602 PS2602L
Contextual Info: HIGH ISOLATION VOLTAGE 6 PIN OPTOCOUPLER PS2601 PS2601L PS2602 PS2602L FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN • HIGH SPEED SWITCHING tr = 3 µs, tf = 5 µs TYP PS2601, PS2602 ,PS2601L and PS2602L are optically coupled isolators containing a GaAs light emitting diode and an NPN

Contextual Info: 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

PS2533

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2533-1 ,-2,-4, PS2533L-1 ,-2,-4 HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE MULTI PHOTOCOUPLER SERIES -NEPOC Series DESCRIPTION The P S2533-1, -2, -4 and P S2533L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode

nec 2501 optocoupler

Abstract: nec photocoupler transistor m 1104 PS2801-1-F3 PS2801-1-F4 PS2801-4 PS2801-4-F3 PS2801-1 nec optocoupler ic nec 2501
Contextual Info: NEC's HIGH ISOLATION VOLTAGE PS2801-1 SOP OPTOCOUPLER PS2801-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. MIN NEC's PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP Small Out-Line Package for

marking E10 DIODE

Abstract: DIODE MARKING 9X SPA547-01 helicoil unf marking E11 DIODE diode marking e8
Contextual Info: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HYPERFAST HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES:

diode marking code I5

Contextual Info: Super Fast Recovery Diode Single Diode mtm D30L60 OUTLINE Unit I mm Weight 43g Typ Package I ITO-3P 15 600V 30A Date code 5.5 N Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr=150ns Type No. • trr= 150ns toft Polarity • Full Molded

TFK300

Abstract: PS2801-1 PS2801-1-F3 PS2801-1-F4 PS2801-4 PS2801-4-F3 PS2801-4-F4 VDE0884 pd4050 transistor 7550-1
Contextual Info: DATA SHEET PHOTOCOUPLER PS2801-1,PS2801-4 HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications.

Contextual Info: MCT2, MCT2E OPTOCOUPLERS D 2 7 3 1 , MARCH 1 9 8 3 COMPATIBLE W ITH STANDARD TTL INTEGRATED CIRCUITS Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor High-Voltage Electrical Isolation or 3 .5 5 -k V Rating 1.5 -kV

Contextual Info: DBG250G Ordering number : ENA0701 SANYO Semiconductors DATA SHEET DBG250G Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier Features • • • • Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V.

Contextual Info: DIODE Type : EP05DA40 Electrostatic Discharge Reinforcement Type OUTLINE DRAWING FEATURES * JEDEC SOD-123 Package * Very Low profile 1.1mm Max * High Surge Capability * Low Forward Voltage Drop * Low Reverse Leakage Current * Packaged in 8mm Tape and Reel

PS2653

Abstract: PS2653L2 PS2654 PS2654L2 VDE0884 PS2564L2
Contextual Info: DATA SHEET PHOTOCOUPLER PS2653,PS2654,PS2653L2,PS2654L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6-PIN PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2653, PS2654, PS2653L2, PS2564L2 are optically coupled isolators containing a GaAs light emitting diode

DBG150G

Abstract: diode 15A
Contextual Info: DBG150G Ordering number : ENA0700 SANYO Semiconductors DATA SHEET DBG150G Diffused Junction Silicon Diode 15A Single-Phase Bridge Rectifier Features • • • • Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V.

NEC 2532

Abstract: PS2532-2 pc 2532 nec PS2532 PS2532-1 PS2532-4 PS2532L-1 PS2532L-1-E3 PS2532L-2-E3 VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS2532-1,-2,-4,PS2532L-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC TM Series− DESCRIPTION The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode

PS2532

Abstract: Transistor 025l
Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2532-1 ,-2,-4,PS2532L-1 ,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES NEPOC Series- DESCRIPTION The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode

Contextual Info: DATA SHEET PHOTOCOUPLER PS2702-1 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR −NEPOC SOP MULTI PHOTOCOUPLER SERIES Series− DESCRIPTION The PS2702-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlingtonconnected phototransistor.

Contextual Info: Super Fast Recovery Diode Single Diode Wtm SF10L60U OUTLINE 6 0 0 V 10A Feature • h iïœ f r d • trr=25ns • 71[Æ -JU K • • • • • • « 1 I Î E 2kV SE High Voltage Super FRD Low Noise trr=25ns Full Molded Dielectric Strength 2kV Main U se

Contextual Info: USBULC6-2F3 2-line IPAD , ultra low capacitance protection for high speed USB Features • Ultra low diode capacitance 1.2 pF max ■ Two data lines (D+ and D-) protected against 15 kV ESD ■ Breakdown voltage VBR = 6.0 V min ■ Flip Chip 400 µm pitch, lead-free