ESJC03 Search Results

esjc

Abstract: diode SM N6040 esjc03-09
Contextual Info: E S J C 0 3 9 kv S ± 'J M fl^tSSs : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC 03», ESJC03 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.

ESJC03-09

Abstract: ESJC03
Contextual Info: E S J C 3 9 k v S ± 'J &J±S£'M?-4=t—K : O utline D raw ings HIGH VOLTAGE SILICO N DIODE ESJC03U, ESJC03 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.

HV transformer 5kv

Abstract: IGNITION TRANSFORMERS collmer Voltage Multipliers 472 5KV Ignition Transformer 30KV CS52-10 CS52-12 CS52-14 CS53-16
Contextual Info: COLLMER SE MI CO N D U C T O R INC MAE D • 22 38 712 00 01 563 5 1 0 « C O L High Voltage Power Supplies/Diodes r ^ .o S g ELECTRONIC HIGH VOLTAGE POWER SUPPLIES HIGH VOLTAGE MULTIPLIERS HIGH VOLTAGE POWER SUPPLIES HV RECTIFIER ASSEMBLIES Standard and Custom Designs

ESJA04-02

Contextual Info: High Voltage Diodes Ratings and characteristics U General purpose type Type Maximum rating V rrm kV ESJA04-02 2 ESJA04-03 ESJA57-04 ESJA57-04 ESJA58-06 3 ESJA58-08 ESJA54-06 ESJA54-08 ESJA52-10 ESJA52-12 ESJA52-14 ESJA53-16 3 Therm al rating lo If s m Tc °C

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

ESJA53-16

Abstract: ESJA54-06 ESJA57-04 ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: COLLMER SEMICONDUCTOR I NC 5SE D 52367TB GG 0 1 3 3 S 5 'T'-ZZ 'O S ' High Voltage Silicon Rectifiers & — Kigh Power Rectifier Assemblies S Part Number VRRM (KV lo (mA) ; VF (V) Trr (jusec) Pkg. L (in) Pkg. Dia. (in) Wire Dia. (in) .256 .256 .394 .394

00.118.10

Abstract: ESJA04-02 ESJA04-03 ESJA52-10 ESJA52-12 ESJA52-14 ESJA53-16 ESJA54-06 ESJA54-08 ESJA57-04
Contextual Info: High Voltage Diodes Ratings and characteristics M General purpose type Type Maximum rating V rrm kV ES JA04-02 2 ES JA04-03 3 ES JA57-04 E SJA57-04 3 ES JA58-08 ESJA54-06 4 6 8 6 ESJA54-08 8 ESJA52-10 10 ESJA52-12 ESJA52-14 12 ESJA53-16 16 ES JA 53-18 ESJA53-20

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 24k 3000 4000

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

220VAC to 12VDC transformer

Abstract: cs5212 ESJA57-04 fuji 472 5KV HV transformer 5kv Ignition Transformer 30KV CS52-10 ESJA04-02 CS52-14
Contextual Info: COL L ME R S E M I C O N D U C T O R INC MAE i • D D 0 1 S B 3 510 « C O L High Voltage Power Supplies/Diodes -r-« -os g ELECTRONIC HIGH VOLTAGE POWER SUPPLIES HIGH VOLTAGE MULTIPLIERS HIGH VOLTAGE POWER SUPPLIES HV RECTIFIER ASSEMBLIES Standard and Custom Designs

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

357B

Abstract: ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

FUJI ESJC04-05

Abstract: ESJC01-12B ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA88-06 ESJA88-08
Contextual Info: HighVoltage Silicon Rectifiers <§ Part Number Vrbm KV lo (mA) Vf (V) Pkg. L. t rr Pkg. Dia. Wira Dia. (in.) (in.) frisec) (in.) Resin Package, 63 Nanosecond Recovery ESJA98-06 6 8 18.0 .06 .256 .098 ESJA98-08 8 8 23.4 .06 .256 .098 .020 .020 ESJA92-12 12

Contextual Info: HIGH VOLTAGE DIODES Part N um ber V kRM lo Vf ta P kg. Length Pkg. Dia. W ire Dla. K V (m A) (V) (nsec) (A) (In.) (B) (In.) (C) (In.) Resin Package, 60 Nanosecond Recovery ESJA98-08 8 8 23.4 .098 .0197 12 8 36.0 .00 .00 .256 ESJA92-12 .394 .118 .0236 Resin Package, 90 Nanosecond Recovery

ESJC15

Abstract: ESJC15 Diode ESJC16 esjc ESJC37 ESJC13 ESJC03 ESJC04 ESJC07 ESJC30
Contextual Info: Abolishment of High Voltage Diode: model “ESJC series’’ Our High Voltage Diode, “ESJC series” has been had your custom for a long period of time. However, it became difficult to continue the stable production due to extreme small of volume of the materials and superannuation of equipment.

ESJA04-02

Contextual Info: HIGH VOLTAGE DIODES Part Number V rrm lo VF ter Pkg. L Pkg. Dia. Wire Dia. K V (mA) (V) (lu ie c ) (In.) (In.) On.) Resin Package, 60 Nanosecond Recovery ESJA98-08 6 8 23.4 .06 .256 .098 .020 ESJA92-12 12 8 36.0 .06 .394 .118 .024 Resin Package, 90 Nanosecond Recovery

3FTA

Abstract: ESJA56-24 ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250

ESJA56-24

Abstract: ESJA57-03 ESJA57-04 ESJA58-06 ESJA58-08 ESJA82-12 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24
Contextual Info: i Tt 3 "C T fc tt 3 • g g ~ “ ~ ggooooco os en en cn on en cn en en en en en en cn en 110c 110c 110c & ? ? ? ? ? o p O 1 —— P P g S S pt». «1 in Co Co o> o» cri en cji cn cn ^ ? p » * O M Si 3> *n 3 3t (a ) 08 001 *001 O SI O SI 3= î" 3» 250