HIGH VOLTAGE AMPLIFIER TRANSISTOR Search Results

2N6211

Abstract: mospec s16c40c mospec HIGH-VOLTAGE OPERATIONAL AMPLIFIER 2N6212 mospec diode Mospec Semiconductor transistor b 1560 2N6213 TRANSISTOR 1385
Contextual Info: A MOSPEC MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators,converters,inverters,deflection stages and hig

2sd1071 equivalent

Abstract: 2SD1071 IC/2sd1071 equivalent
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1071 Preliminary NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER  DESCRIPTION The UTC 2SD1071 is a high voltage power amplifier, it uses UTC advanced technology to provide the customers high DC current gain

MPS-L51

Abstract: transistor BF 2030
Contextual Info: MPS-L51 SILICON HIGH VOLTAGE PNP SILICON ANNULAR TRANSISTOR . . . designed for general-purpose, high-voltage amplifier applications. • PNP SILICON AMPLIFIER TRANSISTOR High Breakdown Voltages B V c E O = 100 Vdc (Min), B V c b O “ 100 Vdc (Min) • Low Saturation Voltage

Contextual Info: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.

Contextual Info: UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES 1 * High voltage: VCEO= 120V * High transition frequency: fT=120MHz typ. * Pc=1.0 ~ 2.0 W(mounted on ceramic substrate) * Complementary to 2SA1201

2SC2881L

Abstract: 032 b
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS „ FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 „ SOT-89 RDERING INFORMATION

NTE188

Abstract: NTE189
Contextual Info: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.

NTE188

Abstract: NTE189
Contextual Info: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.

2SC1815L

Abstract: 2SA1015 2SC1815
Contextual Info: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) •

2SA1201

Abstract: 2SC2881
Contextual Info: 2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1201 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package •

Contextual Info: LM7372 LM7372 High Speed, High Output Current, Dual Operational Amplifier Literature Number: SNOS926D LM7372 High Speed, High Output Current, Dual Operational Amplifier General Description Features The LM7372 is a high speed dual voltage feedback amplifier

2N5551-NPN

Contextual Info: 2N5551 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier E A C

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. „ FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.

OPA544

Abstract: Burr-Brown IC data book free download AB-038 AB-039 MUR420 OPA544F OPA544T OPA544T-1 OPA602 REF102
Contextual Info: OPA544 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH OUTPUT CURRENT: 2A min The OPA544 is a high-voltage/high-current operational amplifier suitable for driving a wide variety of high power loads. High performance FET op amp

Contextual Info: OPA544 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH OUTPUT CURRENT: 2A min The OPA544 is a high-voltage/high-current operational amplifier suitable for driving a wide variety of high power loads. High performance FET op amp

NTE28

Abstract: 10-32 UNF 2A
Contextual Info: NTE28 Germanium PNP Transistor High Current, High Gain Amplifier Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Contextual Info: OPA544 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH OUTPUT CURRENT: 2A min The OPA544 is a high-voltage/high-current operational amplifier suitable for driving a wide variety of high power loads. High performance FET op amp

BC394

Contextual Info: BC394 EPITAXIAL PLANAR NPN • HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. TO-18 INTERNAL SCHEMATIC DIAGRAM

2SA1575

Abstract: 2SC4080
Contextual Info: Ordering number:EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Features Package Dimensions • High fT. · High breakdown voltage. · Small reverse transfer capacitance and excellent

mpsa92 transistor

Abstract: Transistor MPSA92
Contextual Info: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:

2SK30ATM

Abstract: 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
Contextual Info: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)

MPSA92

Contextual Info: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:

Contextual Info: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V

AB-038

Abstract: AB-039 MUR420 OPA2544 OPA2544T
Contextual Info: OPA2544 FPO High-Voltage, High-Current DUAL OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH OUTPUT CURRENT: 2A min ● WIDE POWER SUPPLY RANGE: ±10V to ±35V The OPA2544 is a dual high-voltage/high-current operational amplifier suitable for driving a wide variety