HIGH SPEED COMPLEMENTARY PAIR Search Results

D44VH10G

Abstract: D44VH10 D45VH10 D45VH10G
Contextual Info: D44VH10 NPN , D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers

D44VH10G

Abstract: D44VH10 D45VH10G D45VH10
Contextual Info: D44VH10 NPN , D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers

2SB939

Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
Contextual Info: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching

2SK399

Abstract: 2SJ113 44TB2 diode lo2a GG13 J-10 Hitachi Scans-001
Contextual Info: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.

2SB939

Abstract: 2SB939A 2SD1262 2SD1262A
Contextual Info: 2SD1262, 2SD1262A Power Transistors 2SD1262, 2SD1262A Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SB939, 2SB939A. • Features . • High DC c u rre n t gain Iifê • High speed switching '

MHQ6002

Abstract: 2N2219 transistor MHQ6001 2N2218 transistor transistor 2N2905 2N2218 2N2219 2N2904 2N2905 TRANSISTOR 2n2904
Contextual Info: MHQ6001 SILICON MHQ6002 QUAD DUAL-IN-LINE HERMETIC SILICON ANNULAR COMPLEMENTARY PAIR TRANSISTORS . . . designed for high-speed switching circuits, DC to applications and complementary circuitry. • DC Current Gain Specified — 1.0 to 300 mAdc • High Current-Gain—Bandwidth Product f-f = 400 MHz (Typ) @ I q = 50 mAdc

Contextual Info: Power Transistors 2SB11G8 2SB1108 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Medium Speed Switching Complementary Pair with 2SD1608 U n it : 4 4 max. 10.2max. • Features !,9max. • High DC c u rre n t gain hFE • High speed switching

CPH6010

Abstract: CPH6009
Contextual Info: CPH6010 Ordering number : ENN8280 NPN Epitaxial Planar Silicon Transistor CPH6010 High Frequency Output Applications High Speed Switching Applications Features • • • High fT. Large current IC=600mA . Complementary pair with the CPH6009 (PNP). Specifications

CPH6009

Abstract: CPH6010
Contextual Info: CPH6009 Ordering number : ENN8324 PNP Epitaxial Planar Silicon Transistor CPH6009 High Frequency Output Applications High Speed Switching Applications Features • • • High fT. Large current IC=600mA . Complementary pair with the CPH6010 (NPN). Specifications

CPH6009

Abstract: CPH6010
Contextual Info: CPH6010 Ordering number : ENN8280 NPN Epitaxial Planar Silicon Transistor CPH6010 High Frequency Output Applications High Speed Switching Applications Features • • • High fT. Large current IC=600mA . Complementary pair with the CPH6009 (PNP). Specifications

CPH6009

Abstract: CPH6010
Contextual Info: CPH6009 Ordering number : ENN8324 PNP Epitaxial Planar Silicon Transistor CPH6009 High Frequency Output Applications High Speed Switching Applications Features • • • High fT. Large current IC=600mA . Complementary pair with the CPH6010 (NPN). Specifications

diode t25 4 HO

Abstract: diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001
Contextual Info: blE D 441b2G5 DDIE^IM flbl « H I T H 2SJ117 H ITA CH I/tO PTO ELEC TR O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. • High Speed Switching.

2SJ77

Abstract: 2sj79
Contextual Info: 2SJ76,2SJ77,2SJ78,2SJ79 Silicon P-Channel MOS FET HITACHI Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting • High forward transfer admittance

Contextual Info: 2SJ76,2SJ77,2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting

Hitachi 2SA

Abstract: Hitachi DSA002756
Contextual Info: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features

2SA1960

Abstract: 2SC5225 Hitachi DSA00396
Contextual Info: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features

2SK399

Abstract: 2SJ113 J-10
Contextual Info: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.

Hitachi 2SA

Abstract: Hitachi DSA002754
Contextual Info: 2SA1960 Silicon NPN Epitaxial ADE-208-392 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SC5225. Features • High voltage large current operation.

2SA1960

Abstract: 2SC5225 DSA003642 Hitachi 2SA
Contextual Info: 2SA1960 Silicon NPN Epitaxial ADE-208-392 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SC5225. Features • High voltage large current operation.

hitachi j79

Abstract: 2SK216 2SK215 j78 transistor 2SJ76 2SK213 2SK214 Hitachi 2SJ Hitachi DSA00397
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance

2SJ76

Abstract: 2SJ79 2SJ77 2SJ78 2SK213 2SK214 2SK215 2SK216 Hitachi Scans-001 PC-H-130
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting

hitachi j79

Abstract: Hitachi 2SJ Hitachi DSA002781
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance

hitachi j79

Abstract: 2SK216 2SK213 2Sk214 2SK214 J78 FET 2SK213 2SK2163 Hitachi 2SJ Hitachi DSA00279 2sk2164
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance

Hitachi 2SJ

Abstract: Hitachi DSA002780 2sj77
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting High forward transfer admittance