HIGH GAIN LOW VOLTAGE PNP TRANSISTOR Search Results

germanium Power Transistor

Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
Contextual Info: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

Contextual Info: ANALOG DEVICES Low Noise, Matched Dual PNP Transistor MAT03 FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 n V /\ Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ

Contextual Info: PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. Features 1 High gain and low saturation voltage. (2) Ideal for small load switching applications. Complements the BCX19 Dimensions (Unit : mm)

Contextual Info: PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. Features 1 High gain and low saturation voltage. (2) Ideal for small load switching applications. Complements the BCX19 Dimensions (Unit : mm)

MAT03

Abstract: MAT03AH2 MAT03 op MAT03A MAT03E MAT03EH MAT03F MAT03FH
Contextual Info: ► A N ALO G D E V IC E S Low Noise, Matched Dual PNP Transistor MAT03 FEA T U R ES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/VHz <§> 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain M atching: 3% max

BCX17

Abstract: BCX19 T116
Contextual Info: BCX17 Transistors PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. zFeatures 1 High gain and low saturation voltage. 2) Ideal for small load switching applications. 3) Complements the BCX19. zDimensions Unit : mm)

MJE210

Abstract: transistor case To 106 transistor C 834
Contextual Info: MJE210 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications.

Contextual Info: 2STR2215 LOW VOLTAGE FAST-SWITCHING HIGH GAIN PNP POWER TRANSISTOR Features • VERY LOW COLLECTOR-EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAST-SWITCHING SPEED ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE ■ MINIATURE SOT-23 PLASTIC PACKAGE

Transistor 834

Abstract: MJE210 TRANSISTOR B 834
Contextual Info: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.

MJE210

Abstract: TRANSISTOR B 834 Transistor 834
Contextual Info: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.

MJE210

Abstract: TRANSISTOR B 834 Transistor 834 B 834 Y
Contextual Info: MJE210 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications.

Contextual Info: SGS-THOMSON iMm@ignnCTisi«ii Sg¡ MJE210 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain

Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA

TRANSISTOR b100

Abstract: diode r207 UP1868
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR FEATURES * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.

UP1868

Abstract: UP1868-AA3-F-R UP1868L-AA3-F-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR „ FEATURES * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - FEB 94_ FEATURES * 15 Volt V CEO * High gain and low saturation voltage APPLICATIONS * Darlington replacement * * * Flash gun convertors Battery powered ci rcu its

germanium Power Transistor

Abstract: Vcb-60V NTE27 Germanium power
Contextual Info: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

2STF2220

Abstract: JESD97 P025H STMicroelectronics marking code date sot-89
Contextual Info: 2STF2220 High Gain Low Voltage PNP Power Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European Directive Description

2STX2220

Abstract: JESD97 X2220
Contextual Info: 2STX2220 High Gain Low Voltage PNP Power Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European Directive Description

Contextual Info: 2STX2220 High Gain Low Voltage PNP Power Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European Directive s

Contextual Info: 2STX2220 High Gain Low Voltage PNP Power Transistor Preliminary Data General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European

MAT03 op

Abstract: cascode miller capacitance low noise Microphone Preamplifier
Contextual Info: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form

MAT03 op

Abstract: PMD CAPACITOR MAT03 MAT03EH Super matched pair current mirror cascode dual matched PNP Dual Transistors TO-78 mat03ah2 MAT03A
Contextual Info: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form

C3129

Abstract: MAT03EH MAT03 MAT03A MAT03AH2 MAT03E MAT03F MAT03FH transistor low noise preamp microphone SILICON SMALL-SIGNAL DICE
Contextual Info: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form