Untitled
Abstract: No abstract text available
Text: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM • Matched Dual Transistor. • Dual Ceramic Hermetic Package • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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2N3810DCSM
-50mA
500mW
600mW
86mW/Â
43mW/Â
MO-041BB)
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2N3810DCSM
Abstract: LE17 dual matched PNP
Text: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM • Matched Dual Transistor. • Dual Ceramic Hermetic Package • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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2N3810DCSM
-50mA
500mW
600mW
MO-041BB)
2N3810DCSM
LE17
dual matched PNP
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Untitled
Abstract: No abstract text available
Text: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810 • Matched Dual Transistor. • Hermetic Metal TO78 Package. • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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2N3810
-50mA
500mW
600mW
86mW/Â
43mW/Â
MO-002AG)
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Untitled
Abstract: No abstract text available
Text: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810 • Matched Dual Transistor. • Hermetic Metal TO78 Package. • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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2N3810
-50mA
500mW
600mW
MO-002AG)
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NST30010MXV6T1G
Abstract: pnp matched pair
Text: NST30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST30010MXV6T1G
OT563
NST30010MXV6/D
NST30010MXV6T1G
pnp matched pair
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Untitled
Abstract: No abstract text available
Text: NST30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST30010MXV6T1G
OT563
NST30010MXV6/D
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marking code 4f, package sot-363
Abstract: NST45011MW6T1G NST45010MW6T1G
Text: NST45010MW6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST45010MW6T1G
OT-363
NST45011MW6T1G
NST45010MW6/D
marking code 4f, package sot-363
NST45010MW6T1G
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Untitled
Abstract: No abstract text available
Text: NST45010MW6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST45010MW6T1G
OT-363
NST45011MW6T1G
NST45010MW6/D
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marking code 4f, package sot-363
Abstract: Q245
Text: NST45010MW6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST45010MW6T1G
OT-363
NST45011MW6T1G
NST45010MW6/D
marking code 4f, package sot-363
Q245
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Untitled
Abstract: No abstract text available
Text: NST45010MW6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST45010MW6T1G
NST45011MW6T1G
Q101n
NST45010MW6/D
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Untitled
Abstract: No abstract text available
Text: NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http://onsemi.com These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST30010MXV6T1G,
NSVT30010MXV6T1G
OT563
NST30010MXV6/D
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pnp matched pair
Abstract: NSVT30010MXV6T1G NST30010MXV
Text: NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http://onsemi.com These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST30010MXV6T1G,
NSVT30010MXV6T1G
OT563
AEC-Q101
OT-563
NST30010MXV6/D
pnp matched pair
NST30010MXV
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ESCC 5207-005
Abstract: SOC3810 MARKING SMD PNP TRANSISTOR R SOC3810HRB 2N3810 2N3810HR LCC6 bipolar junction transistor LCC-6 marking code SMD ic
Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■
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2N3810HR
2N3810HR
ESCC 5207-005
SOC3810
MARKING SMD PNP TRANSISTOR R
SOC3810HRB
2N3810
LCC6
bipolar junction transistor
LCC-6
marking code SMD ic
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SOC3810HRB
Abstract: No abstract text available
Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■
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2N3810HR
2N3810HR
SOC3810HRB
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SOC3810HRB
Abstract: transistor st 431 SOC38 ESCC SOC3810 2N3810
Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet — production data Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics
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2N3810HR
2N3810HR
SOC3810HRB
transistor st 431
SOC38
ESCC
SOC3810
2N3810
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IC free
Abstract: No abstract text available
Text: Central CMLT5087EM SURFACE MOUNT DUAL, MATCHED PNP SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5087EM consists of two individual, isolated 5087E PNP silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high
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CMLT5087EM
5087E
OT-563
25-September
IC free
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NSV40300
Abstract: P40300 free transistor and ic equivalent data NSS40300MD
Text: NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low
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NSS40300MDR2G,
NSV40300MDR2G
NSS40300MD/D
NSV40300
P40300
free transistor and ic equivalent data
NSS40300MD
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NSS40300MD
Abstract: NSS40300MDR2G
Text: NSS40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low
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NSS40300MDR2G
NSS40300MD/D
NSS40300MD
NSS40300MDR2G
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NSS40300MD
Abstract: No abstract text available
Text: NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low
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NSS40300MDR2G,
NSV40300MDR2G
NSS40300MD/D
NSS40300MD
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Untitled
Abstract: No abstract text available
Text: DMDT9922 PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR ADVANCE INFORMATION Features • · · · Epitaxial Planar Die Construction Low Noise High Current Gain Matched Pair of Transistors SOT-363 A C2 · · · E1 KXX Mechanical Data · · B1 Case: SOT-363, Molded Plastic
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DMDT9922
OT-363
OT-363,
MIL-STD-202,
-50mA,
-10mA
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IC 555
Abstract: datasheet of ic 555 datasheet ic 555 555 ic ic 555 datasheet TRANSISTOR 1P DMDT9922
Text: DMDT9922 PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR ADVANCE INFORMATION Features • · · · Epitaxial Planar Die Construction Low Noise High Current Gain Matched Pair of Transistors SOT-363 A C2 · · · E1 KXX Mechanical Data · · B1 Case: SOT-363, Molded Plastic
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DMDT9922
OT-363
OT-363,
MIL-STD-202,
-10mA
100MHz
300ms,
DS30142
IC 555
datasheet of ic 555
datasheet ic 555
555 ic
ic 555 datasheet
TRANSISTOR 1P
DMDT9922
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES Low Noise, Matched Dual PNP Transistor MAT03 FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 n V /\ Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ
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MAT03
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MAT03
Abstract: MAT03AH2 MAT03 op MAT03A MAT03E MAT03EH MAT03F MAT03FH
Text: ► A N ALO G D E V IC E S Low Noise, Matched Dual PNP Transistor MAT03 FEA T U R ES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/VHz <§> 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain M atching: 3% max
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MAT03
MAT03
MAT03AH2
MAT03 op
MAT03A
MAT03E
MAT03EH
MAT03F
MAT03FH
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Untitled
Abstract: No abstract text available
Text: MD3251AHX, HXV DUAL MD3251AFHXV (DUAL) MHQ3251AHX, HXV (QUAD) M03251AHXV (QUAD) CRYSTAtONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 PNP Silicon Dual/Quad Small-Signal Transistors designed for general-purpose amplifier applications. Matched devices for DC current
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MD3251AHX,
MD3251AFHXV
MHQ3251AHX,
M03251AHXV
MD3251A
MD3251AF
MHQ3251A
MQ3251A
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