HIGH AREA IR PHOTODIODE Search Results
HIGH AREA IR PHOTODIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GC331AD7LQ103KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC331CD7LP683KX19L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC332QD7LP104KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC355DD7LP684KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GR331AD7LP333KW01D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose |
HIGH AREA IR PHOTODIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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low noise ir photodiode amplifier
Abstract: UDT photodiode -5 UDT photodiode -5 silicon UDT Sensors PSD
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1300nm 900nm 1700nm. low noise ir photodiode amplifier UDT photodiode -5 UDT photodiode -5 silicon UDT Sensors PSD | |
photodiode 850nm nep
Abstract: 620E
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970nm 970nm 400nm 1100nm FCI-020A FCI-040A 970nm. 632nm 850nm. photodiode 850nm nep 620E | |
InGaAs Photodiode 1550nm
Abstract: InGaas PIN photodiode, 3mm pin photodiode InGaAs sensitivity
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900nm 1700nm 1100nm 1620nm, 1310nm. InGaAs Photodiode 1550nm InGaas PIN photodiode, 3mm pin photodiode InGaAs sensitivity | |
far uv photodiode
Abstract: S1722-02 S1723-05 SE-171 radiation detector LARGE SURFACE AREA PHOTODIODE s1722
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S1722-02, S1723-05 S1722-02 S1723-05 S1722-02) S1723-05) S1722-02: S1723-05: far uv photodiode SE-171 radiation detector LARGE SURFACE AREA PHOTODIODE s1722 | |
far uv photodiode
Abstract: B91 photo Transistor B91 photo diode S1722 S1722-02 S1723-05 SE-171 Si photodiode, united detector s172202 Radiation Detector
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S1722-02, S1723-05 S1722-02 S1723-05 S1722-02) S1723-05) S1722-02: S1723-05: far uv photodiode B91 photo Transistor B91 photo diode S1722 SE-171 Si photodiode, united detector s172202 Radiation Detector | |
Contextual Info: PHOTODIODE Si PIN photodiode S1722-02, S1723-05 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of φ4.1 mm S1722-02 or 10 x 10 mm (S1723-05). Using quartz |
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S1722-02, S1723-05 S1722-02 S1723-05 S1722-02) S1723-05) S1722-02: S1723-05: | |
Contextual Info: Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power |
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S12271 KPIN1085E02 | |
820nM
Abstract: BPW83
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BPW83 BPW83 870nm 25the D-74025 15-Jul-96 820nM | |
BPW82Contextual Info: BPW82 Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters l p 800 nm . The large active area combined with a flat case gives a |
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BPW82 BPW82 870nm 25the D-74025 15-Jul-96 | |
bpw41n
Abstract: infrared emitters and detectors data book temic BPW41N IR DATA Book Microelectronic vr 1K 950nm pin diodes radiation detector Telefunken Electronic
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BPW41N BPW41N D-74025 15-Jul-96 infrared emitters and detectors data book temic BPW41N IR DATA Book Microelectronic vr 1K 950nm pin diodes radiation detector Telefunken Electronic | |
S186P
Abstract: 820nM
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S186P S186P D-74025 15-Jul-96 820nM | |
far uv photodiodeContextual Info: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters. |
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S1722-02 S1722-02 SE-171 KPIN1045E06 far uv photodiode | |
far uv photodiode
Abstract: Radiation Detector
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S1722-02 S1722-02 SE-171 KPIN1045E04 far uv photodiode Radiation Detector | |
Contextual Info: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters. |
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S1722-02 S1722-02 SE-171 KPIN1045E05 | |
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Contextual Info: TEMD5110 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5110 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area and an infrared bandpass filter matched to IR |
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TEMD5110 TEMD5110 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05 | |
Contextual Info: TEMD5120 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5120 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 4.4 mm2 sensitive area and an infrared bandpass filter matched to IR |
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TEMD5120 TEMD5120 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05 | |
TEMD5110Contextual Info: TEMD5110 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5110 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area and an infrared bandpass filter matched to IR |
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TEMD5110 TEMD5110 2000/53/EC, 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
TEMD5110
Abstract: TEMD5120
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TEMD5120 TEMD5120 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/ECs D-74025 13-Jan-05 TEMD5110 | |
Contextual Info: TEMD5120 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5120 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 4.4 mm2 sensitive area and an infrared bandpass filter matched to IR |
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TEMD5120 TEMD5120 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05 | |
Contextual Info: TEMD5120 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5120 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 5.7 mm2 sensitive area and an infrared bandpass filter matched to IR |
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TEMD5120 TEMD5120 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
Contextual Info: TEMD5120 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5120 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 4.4 mm2 sensitive area and an infrared bandpass filter matched to IR |
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TEMD5120 TEMD5120 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC D-74025 12-Aug-05 | |
TEMD5110Contextual Info: TEMD5110 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5110 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area and an infrared bandpass filter matched to IR |
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TEMD5110 TEMD5110 2000/53/EC, 2002/95/EC 2002/96/EC D-74025 17-Dec-04 | |
Contextual Info: TEMD5110 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5110 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area and an infrared bandpass filter matched to IR |
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TEMD5110 TEMD5110 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05 | |
Contextual Info: Panasonic CCD Area Image Sensor MN3726MFE, MN3726MAE 6mm 1/3 inch 512H High-Resposivity CCD Area Image Sensors •O verview I Pin Assignments T y p e N o. M N 3726M FE M N 3726M A E S ize 6 m m (1/3 inch) S y stem Area | C o lo r o r B /W PAL C o lo r C C IR |
OCR Scan |
MN3726MFE, MN3726MAE 3726M bT32652 QD13450 104ns |