HFE IS TRANSISTOR Search Results

marking codes SOT23 SS

Abstract: marking 7T
Contextual Info: IIV C CMPT3904 NPN CMPT3906 PNP COMPLEMENTARY SILICON TRANSISTORS bvceo b v ebo VCE SAT VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE r a l The C E NTRAL S E M IC O N D U C TO R CM P T3904, CM P T3906 types are co m p le m e n ta ry s ilico n tra n s is to rs

2SA1312

Contextual Info: MMBTSC3324LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V Excellent hFE linearity: hFE IC=0.1mA /hFE(IC=2mA)

lowest noise audio NPN

Abstract: 2SA1312 hFE is transistor
Contextual Info: MMBTSC3324LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V Excellent hFE linearity: hFE IC=0.1mA /hFE(IC=2mA)

Contextual Info: Transistor 2SD892, 2SD892A Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 5.0±0.2 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE

2SD893

Abstract: 2SD893A
Contextual Info: Transistor 2SD893, 2SD893A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 4.0±0.2 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE

D1980

Abstract: diode marking F5
Contextual Info: 2SD1980F5 Transistor, NPN, Darlington pair Features Dimensions Units : mm • • available in CPT F5 (SC-63) package package marking: D1980*Q, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) damper diode is incorporated

2SD1834

Contextual Info: 2SD1834 Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1834; D E*, where ★ is hFE code • Darlington connection provides high DC current gain (hFE), typically hFE = 15,000 at VCE = 3 V, lc = 500 mA

Contextual Info: Transistor 2SD893, 2SD893A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20000.

B1316

Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
Contextual Info: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •

D2318

Contextual Info: 2SD2318F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2318*Q, where ★ is hFE code and □ is lot number high DC current amplification, typically hFE = 1000 • low collector saturation voltage,

b1316

Abstract: B131-6
Contextual Info: Transistor, PNP, Darlington pair 2 S B 1 3 1 6 F 5 Features • available in CPT F5 SC-63 package • package marking: B1316*Q , where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated

dual sot363

Abstract: CMKT5089M10 C9M0
Contextual Info: CMKT5089M10 Central TM Semiconductor Corp. SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two 2 individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAminiTM device is

Contextual Info: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1181 where ★ is hFE code and ta is lot number • high breakdown voltage and large current capability: VCE0 = -80 V, IC = -1 A • good hFE linearity

Contextual Info: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA

113 marking code PNP transistor

Abstract: 113 marking code transistor 2SB852K T146 transistor PNP transistor 2SB
Contextual Info: 2SB852K Transistor, PNP, Darlington pair Features Dimensions U n its : mm available In SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; (-)★ where ★ is hFE code 0.8 * 0. Darlington connection provides high DC current gain (hFE) fl J3

Contextual Info: 2SD1383K Transistor, NPN, Darlington pair Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1383K; W ^, where ★ is hFE code Darlington connection provides high hFE = 50,000 (typically) at 100 mA • 2SD1383K (SMT3)

2SC3245

Abstract: 2SA1285 2SC3245A
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3245,2SC3245A FOR PRE-DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC3245.2SC3245A is a silicon NPN epitaxial type transistor. «&5.1MAX Designed with high voltage, high hFE, high fr, low Cob and excellent hFE

Contextual Info: MMBTSA1505 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA

d0147

Abstract: 2SC SERIES 7626 transistor 1D TRANSISTOR TRANSISTOR 2SC npn, transistor, sc 107 b TAA 981 2SC3838K 2SC4083 T146
Contextual Info: 2SC3838K 2SC4083 Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: — 2SC3838K; AD^, where ★is hFE code — 2SC4083; 1D-*, where ★ is hFE code high transition frequency, typically

113 marking code PNP transistor

Abstract: 2sb darlington Darlington pair pnp
Contextual Info: 2SB852K Transistor, PNP, Darlington pair Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; U * where ★ is hFE code 1 9 *0 2 0.8 Min. 00*0 095 Darlington connection provides high DC current gain (hFE)

2SD1205

Abstract: 2SD1205A
Contextual Info: Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9±0.1 1.5 1.0 4.5±0.1 7 0. R 0.85 4.1±0.2 ● 2.4±0.2 2.0±0.2 3.5±0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE

2SD1205

Abstract: 2SD1205A driver transistor hfe 60
Contextual Info: Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9±0.1 1.5 1.0 4.5±0.1 7 0. R 0.85 4.1±0.2 ● 2.4±0.2 2.0±0.2 3.5±0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE

transistor eb 2030

Abstract: 2SA1285 Tone Control amp OC120
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1285, 2SA1285A FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SA1285, 2SA1285A is a silicon PN P epitaxial type transistor. ¿5 .1 M A X Designed with high voltage, high hFE, high fr, small Cob and excellent hFE

TC-1818A

Abstract: TC181 2SD1899-Z
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION <R> PACKAGE DRAWING Unit: mm The 2SD1899-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 4 • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V