C9M0 Search Results

C9M0

Abstract: CMKT5089M10
Contextual Info: Central CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS SOT-363 CASE MAXIMUM RATINGS: TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage

sot-363 MARKING l0

Contextual Info: Central CMKT5089M10 SURFACE MOUNT ULTRAmini DUAL NPN SILICON MATCHED hpE TRANSISTORS Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two individual, isolat­ ed 5089 NPN silicon transistors with matched hpE- This ULTRAmini™device is manufactured by

TRANSISTOR MARKING 06

Abstract: CMKT5089M10 SOT-363 marking 05 dual npn
Contextual Info: Central CMKT5089M10 TM Semiconductor Corp. ULTRAminiTM DUAL NPN SILICON MATCHED TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 is a Dual, NPN silicon matched transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAminiTM

dual sot363

Abstract: CMKT5089M10 C9M0
Contextual Info: CMKT5089M10 Central TM Semiconductor Corp. SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two 2 individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAminiTM device is

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

"dual TRANSISTORs" sot363

Abstract: CMKT5089M10
Contextual Info: CMKT5089M10 SURFACE MOUNT DUAL NPN SILICON MATCHED hFE TRANSISTORS SOT-363 CASE MAXIMUM RATINGS: TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature

Contextual Info: CMKT5089M10 SURFACE MOUNT DUAL NPN SILICON MATCHED hFE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two 2 individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAmini device is manufactured by the epitaxial

Contextual Info: Central CMKT5089M10 Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL NPN SILICON MATCHED hpE TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two ¿ individual, iso­ lated 5089 NPN silicon transistors with matched hpE- This ULTRAmini™ device is mapufactured by

C9M0

Abstract: MARKING CODE c9m0 SOT363
Contextual Info: Central CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS SOT-363 CASE MAXIMUM RATINGS: TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage