HFE 2500 Search Results

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

hFE-75

Abstract: g14a 2SD886 2SD886A 800-1500
Contextual Info: 2SD886, 2SD886A 2SD886, 2SD886A V IJ =i ^ N PN = m & W l 7 l s — f M / S i NPN Triple Diffused Planar « ra n « * , &mmnt M^m/mgh hFE, AF Power Amplifier 10.5 + 0.5 • 4# ^ /F e a tu re s • U nit ! mm £ hFE t5 ''S 5 / H i g h hFE 4.8max. 9.8max. Om

103 transistor

Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)

B1316

Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
Contextual Info: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •

D2318

Contextual Info: 2SD2318F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2318*Q, where ★ is hFE code and □ is lot number high DC current amplification, typically hFE = 1000 • low collector saturation voltage,

D1980

Abstract: 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 2SD1980F5 damper diode darlington npn transistor t f5 j
Contextual Info: 2SD1980F5 Transistor, NPN, Darlington pair Features • available in CPT F5 SC-63 package • package marking: D1980-AQ, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) • damper diode is incorporated

2SD1259

Abstract: 2SD1259A
Contextual Info: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to

Contextual Info: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1181 where ★ is hFE code and ta is lot number • high breakdown voltage and large current capability: VCE0 = -80 V, IC = -1 A • good hFE linearity

Contextual Info: Power Transistors 2SD2158, 2SD2158A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio • Features High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with

Contextual Info: Power Transistors 2SD1259, 2SD1259A 2SD1259, 2SD1259A Silicon NPN Triple-Diffused Planar Type • Package Dimensions High DC Current Gain hFE , Power Amplifier ■ Features • High DC c u rre n t gain (hFE) • Good linearity of DC cu rre n t gain (I i f e )

2SD1259

Abstract: 2SD1259A
Contextual Info: Power T ransistors 2SD1259, 2SD1259A 2SD1259, 2SD1259A Silicon NPN Triple-Diffused Planar Type Package Dim ensions High D C Current Gain hFE , Power Amplifier • Features • H igh DC c u r re n t gain (I i f e ) • G ood lin e a rity o f D C c u r re n t gain (hFE)

2N6040

Abstract: 2N6041 2N6042 2N6043 2N6044 2N6045
Contextual Info: ON Semiconductor PNP Plastic Medium-Power Complementary Silicon Transistors 2N6040 2N6042 2N6043 * NPN 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain – hFE = 2500 Typ) @ IC = 4.0 Adc

2N6042

Abstract: 2N6042 equivalent
Contextual Info: PNP 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium−Power Complementary Silicon Transistors . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

TIP122G

Abstract: TIP12x TIP122 TIP120G TIP125G TIP125 tip126g TIP127 TIP120 TIP121
Contextual Info: TIP120, TIP121, TIP122 NPN ; TIP125, TIP126, TIP127 (PNP) Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Designed for general-purpose amplifier and low-speed switching applications. Features •ăHigh DC Current Gain hFE = 2500 (Typ) @ IC

Contextual Info: MITSUBISHI TRANSISTOR MODULES i QM300DY-24 j j j HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 • Ic • V cex • hFE Collector current. 300A

pj 83 diode

Abstract: Mitsubishi transistor mitsubishi servo power module WA200
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM20KD-HB lc Collector current. 20A VCEX Collector-emitter voltage.600V hFE DC current gain. 250

tip132

Abstract: TIP137 tip131 300 watts amplifier circuit diagram with specific 500 watts amplifier schematic diagram transistors tip131 tipxxx
Contextual Info: TIP131, TIP132 NPN , TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc

TIP120-D

Abstract: TIP120 TIP121 TIP127 tip122 motorola 1N5825 MSD6100 TIP122 TIP125 TIP126
Contextual Info: MOTOROLA Order this document by TIP120/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc

TIP120-D

Abstract: TIP127 TRANSISTOR tip122 1N5825 MSD6100 TIP120 TIP121 TIP122 TIP125 TIP126
Contextual Info: ON Semiconductort Plastic Medium-Power Complementary Silicon Transistors • High DC Current Gain — • • • TIP120 * TIP121* TIP122 * PNP TIP125 * . . . designed for general–purpose amplifier and low–speed switching applications. • NPN hFE = 2500 Typ @ IC

tip122

Abstract: TIP127 K120T TIP120
Contextual Info: ON Semiconductor NPN TIP120 * TIP121* Plastic Medium−Power Complementary Silicon Transistors TIP122 * PNP TIP125 * . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain — • • • • hFE = 2500 Typ) @ IC

BOX 53C IC

Abstract: BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B
Contextual Info: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

MJE224

Abstract: pnp power transistor
Contextual Info: ON Semiconductor NPN Plastic Medium−Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general−purpose amplifier and low−speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ) @ IC

Contextual Info: ON Semiconductor NPN Darlington Complementary Silicon Power Transistors BDX33B BDX33C* . . . designed for general purpose and low speed switching applications. PNP BDX34B * BDX34C • High DC Current Gain — • • • • hFE = 2500 typ.) at IC = 4.0

Box 34C

Abstract: box 34b BDX33B BDX33C BDX34B BDX34C
Contextual Info: ON Semiconductor NPN Darlington Complementary Silicon Power Transistors BDX33B BDX33C* . . . designed for general purpose and low speed switching applications. PNP BDX34B * BDX34C • High DC Current Gain — • • • • hFE = 2500 typ.) at IC = 4.0