HFA35 Search Results

HFA3424

Abstract: HFA3524 HFA3524IA HFA3524IA96 HFA3724 HSP3824 hfa35241 hp5385
Contextual Info: HFA3524 TM Data Sheet March 2000 File Number 2.5GHz/600MHz Dual Frequency Synthesizer Features The Intersil 2.4GHz PRISM chip set is a highly integrated six-chip solution for RF modems employing Direct Sequence Spread Spectrum DSSS signaling. The HFA3524 600MHz Dual

Contextual Info: PD-20379A HFA35HB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VF = 1.75V Qrr = 290nC

Contextual Info: HFA3524, HFA3524A S em iconductor January 1999 Data Sheet File Number 4062.7 Features 2.5GHz/600MHz Dual Frequency Synthesizer • 2 .7 V to 5.5 V O pe ra tion T he H arris 2.4 G H z PR IS M chip set is a highly in te gra te d six-ch ip solutio n for RF m odem s em p lo ying D irect

2sa 102 transistor

Contextual Info: International S Rectifier HEXFRED P D -2 .3 7 9 Provisional Data Sheet HFA35HB60 ULTRA FAST, SOFT RECOVERY DIODE 600V, 22A Features: Major Ratings and Characteristics Characteristics — — — — — — — — — Units Vbr 600 V lF AV 22 A trr 75

Contextual Info: International M Rectifier_ HEXFRED PD-2.371 Provisional Data Sheet HFA35HB120C ULTRA FAST, s o f t RECOVERY DIODE Major Ratings and Characteristics Features: 1200 V lF AV 15 A trr (per leg) 95 ns Qrr (per leg) 380 nC — — — — — — — —

Contextual Info: HFA35HB120C Diodes Center-Tapped Positive CC HS Rectifier I(O) Max.(A) Output Current15 V(RRM)(V) Rep.Pk.Rev. Voltage1.2k t(rr) Max.(s) Rev.Rec. Time95n @I(F) (A) (Test Condition)7.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage4.3 @I(FM) (A) (Test Condition)15

smd transistor RA4

Abstract: smd ra6 transistor m 9630 smd RA2 transistor TRANSISTOR R57 phillips smd-npn-transistor SMV2100L HFA3524 HFA3524IA AN9630
Contextual Info: Harris Semiconductor No. AN9630 Harris Wireless Products November 1996 Using The HFA3524 Evaluation Board Author: Tim Bozych TM Introduction ware, make the connections to the eval board and you are ready to run. The HFA3524 is a highly integrated Dual Frequency Synthesizer ideally suited for use in

HFA35HB120C

Contextual Info: PD - 20371D HFA35HB120C Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 1200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets IF AV = 15A Qrr = 370ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power

HFA35HB60

Contextual Info: PD-20379 HFA35HB60 HEXFRED TM Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VF = 1.75V

rm73z1j000

Abstract: MCH182F104ZK TRANSISTOR R57 phillips ERJ-2RKF-20R0 MCH312F105ZP MCH215A101JK smd transistor RA5 smd transistor RA4 KXN1332A LL2012-F12NK
Contextual Info: Using The HFA3524EVAL Board TM March 2000 AN9809.3 Author: Milutin Culibrk Introduction The HFA3524 is a highly integrated Dual Frequency Synthesizer ideally suited for use in communications applications. The Synthesizer features include a dual modulus prescaler for

Contextual Info: HFA3524 HARRIS S E M I C O N D U C T O R juiy 1996 2.5GHz/600MHz Dual Frequency Synthesizer Features • Description 2.7V to 5.5V Operation • Low Current Consumption • Selectable Powerdown Mode Ice = 11^A Typical at 3V • Dual Modulus Prescaler, 32/33 or 64/65

Contextual Info: HFA3524, HFA3524A if H A R R I S SEMICONDUCTOR July 1998 2.5GHz/600MHz Dual Frequency Synthesizer Features • 2.7V to 5.5V Operation • Low Current Consumption • Selectable Powerdown Mode Iqq = 1jliA Typical at 3V • Dual Modulus Prescaler, 32/33 or 64/65

Contextual Info: PD - 20371C HFA35HB120C Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 1200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets IF AV = 15A Qrr = 370ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power

Contextual Info: HFA3524, HFA3524A f ü H A R R IS S E M I C O N D U C T O R July 1998 4062.6 2.5GHz/600MHz Dual Frequency Synthesizer Features • 2.7V to 5.5V Operation • Low Current Consumption • Selectable Powerdown Mode Iqq = 1juA Typical at 3V • Dual Modulus Prescaler, 32/33 or 64/65

835.8011.52

Abstract: hfa3424 HFA3524 HFA3524IA HFA3524IA96 HFA3724 HSP3824 prism 2 hp5385
Contextual Info: HFA3524 NS ESI G W D 90 4 E N 4 N te r a t OR ED F ps F n E ND II, 11 M b p ort Ce /ts c M M p O u M m C o S S I c E l R PR ca rs il. NO T ER TO T e ch ni Data .inteSheet w r F w u R E a ct o rw nt SI L o o r c o 8 -I N TE R 1 -8 8 itle b() tho yrds

SMHU 835.8011.52

Contextual Info: HARRIS H F A 3 5 2 4 S E M I C O N D U C T O R PRELIMINARY 2.5GHz/600MHz Dual Frequency Synthesizer October 1995 Features Description • 2.7V to 5.5V Operation The HFA3524 is a monolithic, integrated dual frequency syn­ thesizer, including prescaler, is

Contextual Info: ffì H A R R IS U S E M I C O N D U C T O R M HFA3524 PRELIMINARY 2.5GHz/600MHz Dual Frequency Synthesizer March 1996 Description Features • 2.7V to 5.5V Operation • Low Current Consumption • Selectable Powerdown Mode lcc = 1|xA Typical at 3V • Dual Modulus Prescaler, 32/33 or 64/65

HFA35HB60

Contextual Info: PD-20379A HFA35HB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VF = 1.75V Qrr = 290nC

Contextual Info: HFA35HA60C Diodes Center-Tapped Positive CC HS Rectifier I(O) Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time60n @I(F) (A) (Test Condition)15 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.0 @I(FM) (A) (Test Condition)30

HFA35HB60C

Contextual Info: PD-20378A PRELIMINARY TM HEXFRED HFA35HB60C Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets

Contextual Info: PD - 20378B HFA35HB60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VF = 1.9V Qrr = 270nC

Contextual Info: PD - 20371D HFA35HB120C Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 1200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets IF AV = 15A Qrr = 370ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power

HFA3524

Abstract: HFA3524A HFA3524AIA HFA3524IA HFA3524IA96 hp5385a
Contextual Info: HFA3524, HFA3524A Data Sheet January 1999 File Number 2.5GHz/600MHz Dual Frequency Synthesizer Features The Intersil 2.4GHz PRISM chip set is a highly integrated six-chip solution for RF modems employing Direct Sequence Spread Spectrum DSSS signaling. The HFA3524/HFA3524A

2100MHZ

Abstract: HFA3524EVAL AN9630 C130 C31A HFA3524 HFA3524IA HFA3524IA96 smd transistor RA4 TRANSISTOR R57 phillips
Contextual Info: NS ESIG Semiconductor D NEW OR AEVAL F D DE 524 MEN HFA3 Application Note M O 9 REC N98 NOT See A Introduction Board Description The HFA3524 evaluation board comes assembled and tested from our factory. The eval kit includes documentation such as this to help make your evaluation of our product a