HF15 Search Results

ASI10612

Abstract: HF150-50F 37ad
Contextual Info: HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50F is Designed for PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W PEP • Omnigold Metalization System FULL R

HF15D060ACE

Abstract: IRGS15B60KD
Contextual Info: PD - 94413 HF15D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance

datasheet of ic 555

Abstract: ASI10613 HF150-50S code 50s
Contextual Info: HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L STUD A The ASI HF150-50S is Designed for .112 x 45° FEATURES: A Ø .630 NOM C • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W (PEP) • Omnigold Metalization System

HF15-28F

Abstract: ASI10602
Contextual Info: HF15-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF15-28F is Designed for FEATURES: B .112 x 45° A E • PG = 21 dB min. at 15 W/30 MHz • IMD3 = -30 dBc max. at 15 W PEP • Omnigold Metalization System C Ø.125 NOM.

HF150-50S

Abstract: transistor 1346 2108 npn transistor 1346 transistor a/transistor 1346 datasheet of ic 555 ASI10613 transistor 495
Contextual Info: HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM

transistor 1346 hfe

Contextual Info: HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM

Contextual Info: HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A • PG = 14 dB min. at 150 W/30 MHz

IRGS15B60K

Abstract: HF15D060ACE IRGS15B60KD 400v 3a low vf diode
Contextual Info: PD - 94413 HF15D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance

HF150-50F

Abstract: ASI10612 HF150-50S
Contextual Info: HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A • PG = 14 dB min. at 150 W/30 MHz

HF15-28S

Abstract: ASI10603
Contextual Info: HF15-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI HF15-28S is Designed for FEATURES: .112x45° A B D S • • • Omnigold Metalization System ØC S G H I D J MAXIMUM RATINGS G #8-32 UNC-2A IC 4.0 A VCBO 65 V VCEO

Contextual Info: HENGFU CORPORATION Established in 1992, www.hengfu.com 15W Open Frame Series – On Board Type HF15W-SPM-5 FEATURES •Assemble on the main PCB of the system ·Universal AC input / full range ·Japanese brand components for key parts ·Electrolytic capacitors all 105°C

SMD MARKING CODE w02

Abstract: 4r5q THERMISTORS SCK 055 smd diode code MK a8 MQW11 K23E5 murata smd inductors marking codes LQH3ER ptc 05m smd diode marking A03
Contextual Info: For safety, you are requested to approve our product specification or transact the approval sheet for product specifications before ordering. K23E5.pdf 01.11.16 MURATA PRODUCTS Global Part Numbering For safety, you are requested to approve our product specification or transact the approval sheet for product specifications before ordering.

LF124

Abstract: LF122D lf122 LF111D 217F LF100D LF101D LF102D LF103D LF104D
Contextual Info: LF100D Series Ultra-Miniature, 1W Dual Output SMT DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input Key Features:

Contextual Info: PD - 96358 INSULATED GATE BIPOLAR TRANSISTOR Features IRGS15B60KPbF C • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free VCES = 600V IC = 15A, TC=100°C

HF90

Contextual Info: SURFACE MOUNT HYBRID COUPLERS HYBRID COUPLERS EMC's thick film quadrature hybrid 3 dB couplers U.S. patent # 5,5 2 1 ,5 6 3 offer high performance and low cost for a variety of applications. These include balanced amplifiers, power dividers and combiners, voltage variable PIN diode attenuators, balanced mixers and modulators,

Contextual Info: HYBRID COUPLERS EMC's thick film process offers the following advantages over competing technologies: • High Power Handling - 250 watts • Small Size • Low Cost in Production Quantities • Rugged Construction • Superior Temperature Stability • Integrated Crossovers - No wire bonds

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

ANSI-J-STD-002

Abstract: AHS080-2018 HF4.5
Contextual Info: We have provided PPTC resettable devices for the automotive industry for over 25 years. With the advent of TS16949 and our continued involvement in the automotive industry, we developed automotive specific versions of our PolySwitch PPTC devices nanoASMDC,

"class AB Linear"

Abstract: hf class AB power amplifier mosfet HF100-12 HF TRANSISTORS linear mosfet HF20-12F
Contextual Info: RF Power Transistors HFSSB ASI HF transistors are characterized for broadband amplifier operation, 2-30MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 12.5 Volt, Class AB Linear BIAS P out

RW-2059

Abstract: RK-6008 convolex tubing Raychem DR-25 Raychem S-1305 RT-1162 RT-1112 RK 6204 S1125 VG 95343 RAYCHEM 6008
Contextual Info: RAYCHEM Tubing Products 1 ATUM Heat-shrinkable Tubing High-Shrink-Ratio, Adhesive-Lined Polyolefin Tubing Product Facts 3:1 and 4:1 shrink ratios allow for connector-to-cable sealing • Tubing environmentally seals and protects components and interconnections

ASMD050F-2

Abstract: AHRF050 HF75 ASMD075F ASMD125F diode Datasheet Marking HF5 diode MARKING A9 TS16949 BD280-1130 PolySwitch 250F
Contextual Info: We have provided PPTC resettable devices for the automotive industry for over 25 years. With the advent of TS16949 and our continued involvement in the automotive industry, we developed automotive specific versions of our PolySwitch PPTC devices AHS, ASMD,

LF101S

Abstract: LF104S LF124 217F LF102S LF103S LF111S LF112S LF105-S
Contextual Info: LF100S Series Ultra-Miniature, 1W Single Output SMT DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input

Contextual Info: TITLE: SPECIFICATION CONTROL DRAWING HF-1500-1000 PART IDENTIFIER: DESCRIPTION: ASSEMBLY DWG: 1.0 HYBRID COUPLER 2000954 SPECIFICATIONS 1.1 ELECTRICAL 1.1.1 IMPEDANCE: 50 OHMS NOMINAL. 1.1.2 FREQUENCY: 1000 MHZ TO 2000 MHZ. 1.1.3 VSWR: 1.30:1 MAX. 1.1.4 INSERTION LOSS: 0.5 DB.

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