HF BAND POWER AMPLIFIER Search Results

nec 1678

Abstract: UPC1678G PC1678G top marking UPC1678G
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PC1678G 2.0 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON MMIC DESCRIPTION The /xPC1678G is a silicon monolithic integrated circuit especially designed as a wide band amplifier covering HF through UHF band with middle output power.

PC2709T

Abstract: PC2710TB HF mark 6pin
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band.

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D ESC R IPTIO N The ¿iPC2776TB is a silicon monolithic integrated circuits designed as w ideband amplifier. impedance near 50 Q in HF band, so this 1C suits to the system of HF to L band.

PC2776TB

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS juPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Q in HF band, so this 1C suits to the system of HF to L band. This 1C is packaged in super

2SC1969

Abstract: 2sc1969 transistor transistor 2sC1969 HF power amplifier f-27MHz 27mhz transistor 2sc196 12v power amplifiers 27mhz
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION •High Power Gain: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band.

IC 30427

Abstract: IC 30427 M RD06HHF1 transistor d 1557 1518 B FET TRANSISTOR 30427 25.ID5 mosfet HF amplifier Pch MOS FET mosfet vgs 5v
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.

transistor d 1557

Abstract: RD06HHF1 transistor 45 f 123 mosfet HF amplifier MITSUBISHI RF POWER MOS FET RF POWER TRANSISTOR 30MHz RD06HHF hf power transistor mosfet j4 92
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.

2sc2166

Contextual Info: Product Specification 2SC2166 Silicon NPN Power Transistor DESCRIPTION ・High Power Gain: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ・High Reliability APPLICATIONS ・Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.

27MHz rf transmitter

Abstract: 27mhz transmitter circuit NTE282
Contextual Info: NTE282 Silicon NPN Transistor Final RF Power Amp, Switch Applications: D HF Power Amplifiers, Switchings D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Contextual Info: MITSUBISHI RF POWER TRANSISTOR tiEM'iñe'J 0017bfi0 Mbl NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATU RES

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm R1 FEATURES •

2SC1969

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i'

2SC2086

Abstract: 50S5 transistor U4 NPN Silicon Epitaxial Planar Transistor to92 2sc2086 transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2086 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2086 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES

arco 406

Contextual Info: ARF521 G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz.

2sc2166

Abstract: 2SC2166 equivalent
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed Dimensions i for RF power amplifiers in HF band mobile radio applications. 9.1 ± 0 .7 FEATURES

arco 406

Abstract: arco mica trimmer ARF521 arco 2.22 pf trimmer 80 watt hf mosfet arco 465 ATC 1nF 700B C11-C13
Contextual Info: ARF521 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165V 150W 150MHz The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • Specified 125 Volt, 81MHz Characteristics:

2SC2166

Abstract: 2sc2166 transistor transistor 2sC2166 RF POWER TRANSISTOR NPN T-30 transistor npn 12V 1A Collector Current
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in HF band mobile radio applications. • 03.6 ± 0.2 9.1 ± 0 . 7 FEATURES

2SC1945

Abstract: TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES • 0 3 .6 ± 0 . 2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3879 TRANSISTOR NPN SOT–23 FEATURES  High Power Gain APPLICATIONS  High Frequency Application  HF,VHF Band Amplifier Application 1. BASE 2. EMITTER 3. COLLECTOR

27mhz rf amplifier

Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)

arco trimmer

Contextual Info: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics:

27mhz rf ic

Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)

2SC1945

Abstract: 2SC1945 Transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES « S 3 .6 ± 0 .2

ARF521

Abstract: arco mica trimmer arco 406 700B C11-C13 VK200-4B mica trimmer
Contextual Info: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics: