HF AMPLIFIER 600 WATTS Search Results

AH5A

Abstract: microphone amplifier with alc 86236 TPU250 paging system PCM2000
Contextual Info: B o g e n Communicati ons Telephone Paging Equipment, Microphones TPU Series Amplifiers c Built-In Telephone Line Input Transformers c Screwdriver Adjustable Controls c Wall or 19" Rack Mounting Five Models and Power Levels Available: TPU-15A Ñ 15 watts, TPU-35B Ñ 35 watts, TPU-60B Ñ 60 watts, and TPU-100B Ñ 100 watts. Inputs for 600-ohm

NA21 npn

Abstract: NA21E NB111 hf amplifier 600 watts NA21 NB111E NB011 NA21EG NR001E SSL-3
Contextual Info: NATL SENICOND {DISCRETE} 6 5 0 1130 N Â T L CL z Q. CM CM < z SEMICOND, Efl DISCRETE < 28C National mim Semiconductor NA21 (NPN) N A 22(PN P) T 35561 - 2 - 9 - [T~| p a c k a g e and lead coding • 20 Volt/1.5 Amp rating ■ 1.2 Watts practical power dissipation (TO-92 PLUS TM)

2sc790

Abstract: transistor 2SC 790 c790 2SA490 AC75 jd2030 SS4490 2SC790 O
Contextual Info: 2 s c 790 o ^ SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR n tim m m o Power Amplifier Applications 3 S A 4 9 0 £ 3 V 7 *iJ H i - F i OTL / y jt ' J T t i i ^ l O W ^ ^ ^ 7 y 7 K M '& 'Z 't o Complementary to 2SA490 10 Watts Output is Available. MAXIMUM RATINGS Ta=g5"C

4CX800A

Abstract: simple 20 watts power amplifier
Contextual Info: SVETLANA TECHNICAL DATA 4CX800A High Performance Tetrode T he Svetlana 4CX800A is a high- performance ceramic metal tetrode with a plate dissipation rating of 800 watts with forced air cooling. The performance characteristics of the 4CX800A allow its use aas a high gain grid-driven RF amplifier or in

4CX800A

Abstract: Scans-048 DSAGER00032 Svetlana ceramic tube amplifier
Contextual Info: 4CX800A High Perform ance Tetrode T he Svetlana 4CX800A is a highperformance ceramic metal tetrode with a plate dissipation rating of 800 watts with forced air cooling. The performance characteristics of the 4CX800A allow its use as a high gain griddriven RF amplifier or in grounded grid service. A

TP-105

Abstract: TP-118 Jettron Products MIL-STD-1311 vhf linear pulse power amplifier
Contextual Info: Return To Product Page 8792 Power Tube Linear Beam Power Amplifier Tube • 1000 Watts Peak Sync Output in VHF Translator Service • 265 Watt Average-Noise-Power Output with White Noise Loading • 300 Watt Power Output in UHF-Linear Telephony Service •

800w power amplifier circuit diagram

Abstract: 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"
Contextual Info: APPLICATION NOTE APT9502 By Kenneth W. Dierberger APT9502 LOW COST 1000 WATT, 300 VOLT RF POWER AMPLIFIER FOR 13.56 MHz Presented at RF EXPO EAST 1995 Page 1 Low Cost 1000 Watt, 300 Volt RF Power Amplifier for 13.56MHz Kenneth Dierberger Applications Engineering Manager

MRF6VP11KH

Abstract: MRF6VP2600H 88-108 rf amplifier 1230 if fm amplifier HF Amplifier 300w hf amplifier 100w power amplifier s band 3 ghz 100w UHF Phase Shifter RF Amplifier 500w 300w rf amplifier uhf
Contextual Info: Freescale’s Industrial, Scientific and Medical RF Semiconductors ISM Solutions Advanced technology for top RF power performance Utilizing Freescale’s innovative 50V VHV6 LDMOS very high voltage sixth generation Laterally Typical ISM Applications Diffused Metal Oxide Semiconductor technology,

motorola rf Power Transistor

Abstract: transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849
Contextual Info: Order this document by AN282A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN282A SYSTEMIZING RF POWER AMPLIFIER DESIGN Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF small signal design techniques are: 1. the use of two port parameters, and

transistor equivalent table chart

Abstract: 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN282A/D AN282A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Systemizing RF Power Amplifier Design

Contextual Info: ERICSSON $ PTF 10022 65 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10022 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1,0 GHz. Its push-pull configuration allows for simpler broadband matching. It is rated

MIL-STD-1311

Abstract: 300 watt hf transistor 12 volt HF SSB APPLICATIONS RF 28 v 300 watt beam Tube vhf linear pulse power amplifier TP-105 TP-118 Jettron Products
Contextual Info: Power Tube Linear Beam Power Amplifier Tube 1000 Watts Peak Sync Output in VHF Translator Service 265 Watt Average-Noise-Power Output with White Noise Loading 300 Watt Power Output in UHF-Linear Telephony Service Watts PEP Output in SSB Suppressed-Carrier Service

Granberg

Abstract: eb104 mylar capacitor 154 EB-104 Wideband Power Transformers Amidon Tech FB-77-6301 cermet trimpot motorola an215a amplificador 50 watt
Contextual Info: Order this document by AR314/D AR314 A 60-WATT PEP LINEAR AMPLIFIER Prepared By Jose I. Cracovski Reprinted w ith perm ission o f R.F. Design Feb. 1988 issue. 1988 C ardiff Publishing Co. All Rights Reserved. MOTOROLA Semiconductor Products Inc. r f featured technology

gammatron

Abstract: audio amplifier 2400 watt vacuum tube amplifier 400 watt audio amplifier heintz 810 audio amplifier
Contextual Info: CAMMATRON type 354 GENERAL PURPOSE TRIODE 150 watt radiation cooled triode, available in two amplification factors: The C a low mu of 14 and the E a high mu of 35. Exceptional HF performance and ability to withstand high voltages. PHYSICAL DATA Tantalum

T253

Contextual Info: 3E22 PUSH-PULL H-F BEAM POWER AMPLIFIER Unless otherwise specified, values are f o r both u n its GENERAL DATA E le c tr¡c a l: H e a te rs , f o r U n i p o t e n t i a l C athodes. Arrangem ent . . Series J >a r ^ L I e L V oltag e . . . . 1 2 . 6 ± 10%

Product Selector Guide

Abstract: NI-400S-2S
Contextual Info: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high

NA72

Abstract: NB313Y NB022EY NB111EY NB121EY NB123EY NB323Y NR001E transistor A05 2TO220
Contextual Info: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h - NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C D ISCRETE 35561 National Semiconductor T ' 2 ? - r < z a. z < Z NA 71 (NPN) NA 7 2 (PNP) ^ AmP com plem entary power tra n sisto rs IT ! packages and lead coding

1000w power amplifier circuit diagram

Abstract: 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram
Contextual Info: APPLICATION NOTE APT9701 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz 1 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz Richard Frey, P.E., RF Applications Engineering, Advanced Power Technology Inc, Bend, OR ABSTRACT directly to a single stage PFC regulated power supply

Contextual Info: MCC TM Micro Commercial Components Features • • • • • •
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6036 Halogen free available upon request by adding suffix "-HF" This device is designed for general purpose amplifier and low-speed

transistor f 948

Abstract: MPS6567 transistor a 949 u407
Contextual Info: MPS6567 SILICON NPN SILICON AMPLIFIER/MIXER TRANSISTOR NPN SILICON ANNULAR AMPLIFIER TRANSISTOR . . . designed for use in high-frequency am plifier and m ixer ap­ plications. • High Collector-Em itter Breakdown Voltage — B V c E O = 40 V dc (Min) @ 1q = 1.0 mAdc

ERIE TECHNOLOGICAL

Abstract: 97-360A TP105 TP-105 TP118 "class AB Linear" hf Erie Technological Products Jettron Products Class D Amplifier
Contextual Info: Return To Product Page 8792/V1 Power Tube VHF-TV Amplifier Tube • • • • • CERMOLOX Full Input to 400 MHz Sturdy, Reliable Matrix Oxide Cathode 1350 Peak Sync Output in VHF-TV Service The BURLE 8792/V1 is designed specifically to meet the stringent requirements of modern VHF-TV

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6036 Features • • • • • • Halogen free available upon request by adding suffix "-HF" This device is designed for general purpose amplifier and low-speed

APT9801

Abstract: ARCO 465 Compression Trimmer Capacitor arco mica trimmer amplifier circuit diagram ARF449A 2020N102J501P arf449 Noble trimmer ARF449B 250 watt amplifier
Contextual Info: APPLICATION NOTE APT9801 By: Richard Frey, P.E. A Push-Pull 300 Watt Amplifier for 81.36 MHz Reprinted from the April 1998 issue of Applied Microwave and Wireless Magazine courtesy of Noble Publishing Crporation Power Amplifier A Push-Pull 300-watt Amplifier

SD1127

Contextual Info: s G S-THOMSON OMC D | 7 ^ 2 3 7 aaaGG2,ì 1 T ~ ? Z z * P !ix . S O L ID ST A T E M IC R O W A V E T H OM S O N COMPONEN T S-M O ST EK SD 1127 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville.PA 18936• 215 362-8500■ T W X 510-661-7299 ,. v n¡. _ ‘