HF 1W AMPLIFIER Search Results

27mhz rf ic

Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)

Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:

27mhz rf amplifier

Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)

TEA5101A

Abstract: transistor t8 hf tube cascode B8274 tda3562a crt tube schematic diagram induction heater TEA5031D 5101A-04 29 CRT TV circuits DIAGRAM
Contextual Info: APPLICATION NOTE TEA5101A - RGB HIGH VOLTAGE AMPLIFIER BASIC OPERATION AND APPLICATIONS By Ch. MATHELET SUMMARY Page I I.1 I.2 I.3 I.4 I.4.1. I.4.2. I.4.3. II II.1 II.1.1 II.1.2. II.1.2.1. II.1.2.2. II.2 II.2.1. II.2.2. III III.1 III.1.1. III.1.2. III.1.3.

22k potentiometer

Abstract: transistor t8 schematic diagram induction heater TEA5101A gun diode amplifier thomson china tv schematic diagram philips colour television picture tube pin volt 6kw class d circuit diagram schematic hf tube cascode tda3562a
Contextual Info: APPLICATION NOTE TEA5101A - RGB HIGH VOLTAGE AMPLIFIER BASIC OPERATION AND APPLICATIONS By Ch. MATHELET SUMMARY Page I I.1 I.2 I.3 I.4 I.4.1. I.4.2. I.4.3. II II.1 II.1.1 II.1.2. II.1.2.1. II.1.2.2. II.2 II.2.1. II.2.2. III III.1 III.1.1. III.1.2. III.1.3.

D2290UK

Abstract: sot143 fet
Contextual Info: TetraFET D2290UK METAL GATE RF SILICON FET MECHANICAL DATA Top View E 3 4 C D K L 2 1 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 12.5V – 1GHz SINGLE ENDED B A G H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN I • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D2290UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Top View E 3 4 C D K L 2 1 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 12.5V – 1GHz SINGLE ENDED B A G H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN I • SUITABLE FOR BROAD BAND APPLICATIONS

D2290UK

Abstract: hf 1W amplifier
Contextual Info: TetraFET D2290UK METAL GATE RF SILICON FET MECHANICAL DATA Top View E 3 4 C D K L 2 1 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 12.5V – 1GHz SINGLE ENDED B A G H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN I • SUITABLE FOR BROAD BAND APPLICATIONS

D2290UK

Contextual Info: TetraFET D2290UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Top View E 3 4 C D K L 2 1 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 12.5V – 1GHz SINGLE ENDED B A G H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN I • SUITABLE FOR BROAD BAND APPLICATIONS

MPS6514

Abstract: MPS6512 MPS 6512 WBSF
Contextual Info: ? :V ^ J ¥à •4 •> -' ■- <¿ MPS 6512 thru’ MPS 6515 âsi;ÿ NPN SILICON PLANAR EPITAXIAL TRANSISTORS là ' ' n i - CASE TO-92A MPS6512 thru' MPS6515 are NPN silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­

27mhz rf ic

Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,

Contextual Info: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7

Contextual Info: New Product Announcement! Coaxial Amplifier 50Ω ZX60-100VH+ Medium High Power The Big Deal 0.3 to 100 MHz Click here for data sheet • Miniature Shielded Rugged Case • Wide frequency range • Excellent Gain Flatness ZX60-100VH+ Price: $229.95 QTY 1-4

Contextual Info: Coaxial Amplifier 50Ω ZX60-100VH+ Medium High Power 0.3 to 100 MHz The Big Deal • Miniature Shielded Rugged Case • Wide frequency range • Excellent Gain Flatness Product Overview This product could be used as a driver amplifier with 1W typical output power. The gain of this amplifier has an excellent

MB3730

Abstract: MB3730A transformer m01 353
Contextual Info: 14 W BTL AUDIO POWER AMPLIFIER MB3730A September 1988 Edition 1.0 14 W BTL AUDIO POWER AMPLIFIER The Fujitsu MB3730A Is designed fo r a low -frequency hlgh-power amplifier with Internal BTL Balanced Transform er Less circuitry. The MB3730A is packed In 7 pin single In line plastic package and requires a few external

2SC1969

Abstract: 2sc1969 transistor transistor 2sC1969 HF power amplifier f-27MHz 27mhz transistor 2sc196 12v power amplifiers 27mhz
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION •High Power Gain: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band.

MPS6516

Abstract: MPS6519 MPS6517 MPS6518 E3060
Contextual Info: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS

dmos rf fet 4w 28v

Abstract: D2089 D2089UK
Contextual Info: TetraFET D2089UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 28V – 2GHz SINGLE ENDED H 4 B 3 1 G 2 pls D 2 FEATURES F C (2 p ls) • SIMPLIFIED AMPLIFIER DESIGN E A PIN 1 SOURCE PIN 2

D2089

Abstract: D2089UK dmos rf fet 4w 28v
Contextual Info: TetraFET D2089UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 28V – 2GHz SINGLE ENDED H 4 B 3 1 G 2 pls D 2 FEATURES F C (2 p ls) • SIMPLIFIED AMPLIFIER DESIGN E A PIN 1 SOURCE PIN 2 GATE PIN 3 SOURCE

Contextual Info: TetraFET III i t t i II D2089U K SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W -28V-2G H Z SINGLE ENDED G 2 pis FEATURES • SIMPLIFIED AMPLIFIER DESIGN A PIN 1 SOURCE PIN 2 GATE PIN 3 SOURCE PIN 4

2sc1969

Abstract: 2sc1969 transistor transistor 2sC1969 mitsubishi 2sc1969 2sc1969 capacitance
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions in mm

BFM23

Contextual Info: mi TetraFET ÌFf= mi BFM23 SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W -28V-2G HZ SINGLE ENDED [ ! G D 2 pis FEATURES • SIMPLIFIED AMPLIFIER DESIGN PIN 1 SOURCE PIN 2 GATE • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS

MB3730

Abstract: MB3730A mylar capacitor 100HZ 10KHZ 200HF
Contextual Info: o f - p i FUJITSU MIC ROE LE CT RON IC S 31E D 37H=i7bS GG1S77S 7 « F M I 910253000101010101010202020202010202 F U J IT S U MB3730A September 1988 Edition 1.0 14 W BTL AUDIO POWER AMPLIFIER The Fujitsu MB3730A Is designed fo r a low -frequency hlgh-power amplifier