HEWLETT-PACKARD TRANSISTOR MICROWAVE Search Results

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

RF transistors with s-parameters

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

AT-42035

Abstract: micro-x 420
Contextual Info: What mLliM HEWLETT* PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features different functions. The 20 emitter finger interdigitated geometry • High Output Power: yields a medium sized transistor 21.0 dBm Typical PldB at 2.0 GHz

transistor s11 s12 s21 s22

Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

Contextual Info: What HEWLETTÍ mLfíM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features functions. The 20 emitter finger interdigitated geometry yields a • High Output Power: 12.0 dBm Typical PxdB at 2.0 GHz medium sized transistor with

5965-5365E

Abstract: marking CJP TT 2490 marking aat sot363 6252 IC circuit diagram
Contextual Info: Whit HEWLETT* wSKM PACKARD 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit • Single Positive Supply Voltage 1.5 - 5V Surface Mount Package SOT-363 (SC -70) • Current Adjustable, 1 to

Contextual Info: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz

Contextual Info: HEWLETT-PACKARD/ CHPNTS m blE D HEW LETT PACKARD • M44 7 5Ô M DDGT7fiS 10T « H P A AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35 micro-X Package Features 22.0 dBm typical Pi dB at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz EMITTER High Gain-Bandwidth Product: 7.0 GHz typical fr

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D • 4 M 4 7 SA 4 0 0 0 ti77b 1Tb ■ H P A AT-00570 Up to 4 GHz General Purpose Silicon Bipolar Transistor W kim H E W LE T T PACKARD 70 mil Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • 11.5 dB typical Gi dB at 2.0 GHz

Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical PldB at 2.0 GHz 20.5dBmTypicalP1 fflat4.0 GHz • High Gain at 1 dB Compression: 14.0dBTypicaIGldBat2.0 GHz

INA-03170

Abstract: INA-01170 INA-02170 INA-03 6679 az ina series AN-S003 INA-10386 mmic ina INA-01
Contextual Info: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm

Contextual Info: HEWLETT-PACKARD/ m CUPNTS blE ]> • 4447564 D0ÜT7Ö3 HEW LETT A T -0 1 610 PACKARD UP to 4 Hz General Purpose Silicon Bipolar Transistor 33b 100 mil Package Features • 22.0 dBm typical Pi dB at 2.0 GHz • 9.5 dB typical Gi dB at 2.0 GHz • • High Gain-Bandwidth Product: 7.0 GHz typical fr

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE 1 H EW LETT PACKARD • 4 4 4 7 S 6 4 0 0 0 1 7 7 4 323 « H P A AT-00535 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35mfcro-X Package Features • 16.0 dBm typical Pi dBat 2.0 GHz • 10.5 dB typical G i dB at 2.0 GHz

ina series

Abstract: Signal Path Designer AN-S003
Contextual Info: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm

TRANSISTOR 0835

Contextual Info: What mLliM HEWLETT* PACKARD Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0835,-0836 Features 0.5 GHz and can be used as a high gain transistor below this fre­ quency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial

AT-42000

Abstract: 42000
Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Chip Technical Data AT-42000 This device is designed for use in low noise, wideband amplifier, • High Output Power: 21.0 dBm Typical PldB at 2.0 GHz mixer and oscillator applications

B52 transistor

Contextual Info: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz

hl 4929

Abstract: 34T sot-363 ATIC 164 D2 48 pin
Contextual Info: That HEWLETT WL'kM PACKARD 1.5 GHz Low N oise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, A ctive Bias Circuit Surface Mount Package SOT-363 SC -70 D escription Pin C onnections and Package Marking The INA-12063 is a unique RFIC

T3D 62

Abstract: t3d 98 AT-41400 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66
Contextual Info: K m HEWLETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features that are easy to match for low noise and moderate power appli­ cations. This device is designed for use in low noise, wideband amplifier, mixer and oscillator

AT-41410

Abstract: AT41410
Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz

Contextual Info: What HEWLETT* miltm PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz

transistor rf type M 2530

Abstract: signal path designer INA02170
Contextual Info: f T J I H EW LETT 1WM P A C K A R D INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process.

Contextual Info: HEWLETT-PACKARD/ CHPNTS t.lE D WM 4447534 1 44 577 □DD‘Ö Surface Mount, Low Current Silicon Bipolar Transistor Technical Data AT-60111 AT-60211 Features • Low C u rrent O peration AT-60111: 0.4 mA at 3 V AT-60211: 0.8 mA at 3 V • Low Noise Figure

chip die npn transistor

Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz