42000 Search Results

ISO-11898-1

Abstract: AMIS42665 ISO11898 TOrxD100
Contextual Info: AND8376/D AMIS-30660/42000 Topology Aspects of a High-Speed CAN Bus http://onsemi.com APPLICATION NOTE Introduction Although these points are analyzed separately, all of them should be considered and the resulting conditions should be fulfilled simultaneously in order to achieve a correct bus

BP 40 Diagramm R T

Abstract: C254A T188F 34Q32R QD004
Contextual Info: t Ï Î S F S2E Typenreihe/Type range 1 00D0m 3 Electrical pitoperties Höchstzulässige Werte Mdrm Vrrm Maximum permissible values 600. 1400 V V 600. 1400 400 188 254 3300 2900 54500 42000 800 160 Itrmsm tc = 85°C tc - 64 °C It s m 7'i2dt di/dt cr

B52 transistor

Contextual Info: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz

D-32425

Abstract: ABB 2600T 264N ABB pressure transmitter series 2600T model 262hs ABB SACE E1 ABB Sace E2 N prometer ABB pressure transmitter series 2600T ABB KENT-TAYLOR transmitter K abb SMART temperature Transmitter
Contextual Info: FieldIT Data Sheet SS/262HS/NS_1 2600T Series Pressure Transmitters Model 262HS Gauge Model 262NS Absolute high overload maximum working pressure up to 65MPa, 9400psi • Base accuracy : ±0.15% ■ Span limits – 1.6 to 42000kPa; 6.4inH2O to 6090psi – 2.67 to 42000kPa abs; 20mmHg to 6090psia

42181

Contextual Info: Silicon Low Noise Bipolar Transistors Transistor Selection Guide Series Geometry Nominal fT GHz Nominal Optimum Noise Figure at Current (mA) 42161 42111 42141 42151 42000 42197 42020 42051 42217 42120 42181 72 60 63 63 60 60 20 55 55 70 02 7.0 5.5 4.5 4.5

ml2036

Abstract: Approaching
Contextual Info: www.fairchildsemi.com Application Note 42000 Generating Phase Controlled Sinewaves with the ML2036 Introduction Initialization The 16-bit resolution of the ML2036 combined with its Inhibit feature makes it a powerful tool for generating precision sinewaves. It can produce frequencies from DC to

AT-42000

Abstract: 42000
Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Chip Technical Data AT-42000 This device is designed for use in low noise, wideband amplifier, • High Output Power: 21.0 dBm Typical PldB at 2.0 GHz mixer and oscillator applications

Contextual Info: Model 42000 2-Way Applications_ • Phased Arrays • Antenna Feed Networks • Image Reject Mixers • Test Systems • LO Power Dividers Features_ • • • • • • • • Military Grade 0.5 – 2.0 GHz 2-Way Power Split

42024B

Abstract: H162
Contextual Info: Convel 42000B DIN Rail Mounting Linear Power Supplies The 42000B Series DIN rail mounting power supplies are supplied ready for connection. The unit has only to be snapped on to the 35mm profile rail DIN 46277-3 and connected to the clearly marked terminal screws. A status LED

transistor 86 y 87

Abstract: eic 57 210 17bs2 AT-42000 AT-42000-GP4 pj 68 S2a
Contextual Info: « Thai minM HP AECWKLAERTDT Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High O utput Power: 21.0 dBm Typical Pj dB at 2.0 GHz m ixer and oscillator applications

42024B

Abstract: convel
Contextual Info: Convel 42000B DIN Rail Mounting Linear Power Supplies The 42000B Series DIN rail mounting power supplies are supplied ready for connection. The unit has only to be snapped on to the 35mm profile rail DIN 46277-3 and connected to the clearly marked terminal screws. A status LED

D-68623

Abstract: HTZ250G28K HTZ250G33K HTZ250G39K HTZ250G44K diode rectifier rectifier module
Contextual Info: HTZ250G Series High Voltage Diode Rectifier Module IF AV = 2.7 A VRRM = 44800 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ250G44K HTZ250G39K HTZ250G33K HTZ250G28K 44800 39200 33600 28000 47600 42000 36400 30800 CIRCUIT DIAGRAM LARONTROL

2SD1805

Abstract: 2115A D195 2044B ITR10038 ITR10035 ITR10036 ITR10037 21153 ITR10044
Contextual Info: 注文コード No. N 2 1 1 5 B 2SD1805 No. N 2 1 1 5 B 42000 * 半導体ニューズ No.2115 ’ 87-88 データブック個別半導体素子トランジスタ編 No.2115A とさしかえてください。 2SD1805 NPN エピタキシァルプレーナ形シリコントランジスタ

AT-42000

Contextual Info: AT-42000 UP t0 6 GHz Medium Power Silicon Bipolar Transistor Chip tVJ H E W L E T T P A C K A R D Chip Outline Features • • • • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression: 15.0 dB typical Gi dB at 2.0 GHz

thyristor 5STP 25L5200

Abstract: 5STP25L5200
Contextual Info: VDSM = 5200 V ITAVM = 2760 A ITRMS = 4340 A ITSM = 42000 A VT0 = 1.00 V rT = 0.225 mΩ Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA1008-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Avantek amplifier 8 12 GHz

Abstract: Avantek power amplifier AT-42000-GP4 AVANTEK transistor
Contextual Info: A V A N T E K INC SDE D • limibb G0Db4fl3 4 AT-42000 Up to 6 GHz Medium Power Transistor Silicon Bipolar Transiste Chip avantek Avantek Chip Outline Features • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:

42024A

Abstract: CSA22 42024A-2 42000A
Contextual Info: Convel 42000A DIN Rail Mounting Linear Power Supplies The 42000A Series DIN rail mounting power supplies are supplied ready for connection. The unit has only to be snapped on to the 35mm profile rail DIN 46277-3 and connected to the clearly marked terminal screws. A status LED

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 2760 A 4340 A 42000 A 1V 0.225 mΩ Ω Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA1008-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

42008

Contextual Info: ET-42000 SERIES Uko-Interface Transformers for ISDN ET- 42000 SERIES Symbols : Ls = Leakage Inductance of secondary windings connected in series with primary windings shorted at 100 KHz,100 mV Ck = Coupling Capacitance between primary and secondary windings(at 10 KHz,100 mV)

Contextual Info: Key Parameters VDSM = 5200 ITAVM = 2500 ITRMS = 3920 ITSM = 42000 VT0 = 1.00 rT = 0.225 V A A A V mΩ Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA 1008-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5STP25L5200

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 2760 A 4340 A 42000 A 1.00 V 0.225 mΩ Ω Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA1008-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

8909E

Abstract: AT-42000 AT-42000-GP4 S21E AT42000-GP4 AV02-1002EN 42000
Contextual Info: AT-42000 Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Data Sheet Description Features Avago’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized

8909E

Abstract: AT-42000 AT-42000-GP4 S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz

AT-42000

Abstract: low noise amplifier ghz AT-42000-GP4 S21E 42000GP4
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz