GSO05553
Abstract: Q62702-G117 CFH77 HEMT marking P
Contextual Info: GaAs HEMT CFH 77 Target Data Sheet • • • • Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-4 Type Marking Ordering Code
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Q62702-G117
GSO05553
GSO05553
Q62702-G117
CFH77
HEMT marking P
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GS 9521
Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
Contextual Info: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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CFH120
CFH120-08
CFH120-10
GS 9521
CFH120
CFH120-08
CFH120-10
1507 0745
HEMT marking K
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PDF
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MAX 8985
Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
Contextual Info: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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CFH120
CFH120-08
Q62705-K0603
CFH120-10
Q62705-K0604
MAX 8985
pseudomorphic HEMT
ta 7176 datasheet
8772 P
CFH120
CFH120-08
CFH120-10
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PDF
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CFY77-10
Abstract: HEMT HEMT marking K 036 906 051 VS005553
Contextual Info: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type
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OCR Scan
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VS005553
CFY77-08
CFY77-10
Q62702-F1549
Q62702-F1559
CFY77-10
HEMT
HEMT marking K
036 906 051
VS005553
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PDF
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CFY 18
Abstract: HEMT marking D HEMT marking K VS005553
Contextual Info: SIEMENS AIGaAs / InGaAs HEMT CFY77 Datasheet Features * Very low noise •V ery high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters 4 * 2 VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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CFY77
VS005553
CFY77-08
CFY77-10
Q62702-F1549
Q62702-F1559
CFY 18
HEMT marking D
HEMT marking K
VS005553
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PDF
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M 6965
Abstract: HEMT marking D CFH400T 72482 HEMT marking P 74923 HEMT marking K
Contextual Info: CFH400T P - HEMT Target Datasheet Features Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz F = 0.6 dB; Ga = 15.5 dB @ 3V; 10mA;
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CFH400T
M 6965
HEMT marking D
CFH400T
72482
HEMT marking P
74923
HEMT marking K
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cfy siemens
Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
Contextual Info: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters
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CFY77-08
Q62702-F1549
CFY77-10
Q62702-F1559
cfy siemens
CFY77-10
cfy77
HEMT marking P
059 906 051
CFY77-08
Q62702-F1549
Q62702-F1559
cfy 14 siemens
HEMT marking K
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PDF
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6943-3
Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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OT343
CFH800
Rn/50
6943-3
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transistor Zo 105
Abstract: 6943-3 55086 HEMT marking P 05973
Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz
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OT343
CFH800
OT343
D-130
Rn/50
transistor Zo 105
6943-3
55086
HEMT marking P
05973
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PDF
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transistor zo 107
Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz
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OT343
CFH400
Q62702-G0116
volt-69
Rn/50
transistor zo 107
831 transistor
Transistor 933
transistor 131-6
TRANSISTOR zo 109 ma
Hemt transistor
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TGA2576-FL
Abstract: GaN hemt TGA2576
Contextual Info: TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier Applications • • • • Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features • • • • • • Functional Block Diagram Frequency Range: 2.5 – 6 GHz Psat: 45.5 dBm @ Pin = 26 dBm
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TGA2576-FL
TGA2576-FL
GaN hemt
TGA2576
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HEMT marking P
Contextual Info: S IE M E N S CFY66 H/Re/K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers •
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OCR Scan
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CFY66
CFY67)
CFY66-08
CFY66-08P
CFY66-10
CFY66-10P
CFY66-nnl
QS9000
HEMT marking P
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transistor zo 107
Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz
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OT343
CFH400
Q62702-G0116
OT343
vol51
Rn/50
transistor zo 107
9412 transistor
transistor zo 109
51687
72741
TRANSISTOR zo 109 ma
CFH400
9412 opt
i 72741
Hemt transistor
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K1924
Abstract: cw marking sot89 162190 RF Driver HEMT
Contextual Info: ODRKGF1924-06 Electronic Components KGF1924 Issue Date:Jan 20, 2005 RF Driver HEMT GENERAL DESCRIPTION The KGF1924, housed in a ceramic package with integrated heat sink, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1924 specifications are guaranteed to
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KGF1924
ODRKGF1924-06
KGF1924,
KGF1924
K1924
cw marking sot89
162190
RF Driver HEMT
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H1 SOT-89 amplifier
Abstract: H1 SOT-89 RF amplifier 94358 E33D
Contextual Info: ODRKGF1922-06 Electronic Components KGF1922 Issue Date:Jan 20, 2005 RF Driver HEMT GENERAL DESCRIPTION The KGF1922, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1922 specifications are guaranteed to
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KGF1922
ODRKGF1922-06
KGF1922,
OT-89
KGF1922
30dBm)
05GHz
30dBm
H1 SOT-89 amplifier
H1 SOT-89 RF amplifier
94358
E33D
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PDF
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micro-x mhz ghz microwave
Abstract: Micro-X Marking 865
Contextual Info: CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package
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CFY67
CFY67-08
CFY67-08P
CFY67-10
CFY67-10P
CFY67-nnl:
micro-x mhz ghz microwave
Micro-X Marking 865
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PDF
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K1924
Abstract: K-192 Z050
Contextual Info: ODRKGF1924-07 Electronic Components KGF1924 Issue Date:May 20, 2005 RF Driver HEMT GENERAL DESCRIPTION The KGF1924, housed in a ceramic package with integrated heat sink, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1924 specifications are guaranteed to
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KGF1924
ODRKGF1924-07
KGF1924,
KGF1924
K1924
K-192
Z050
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PDF
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H1 SOT-89 amplifier
Abstract: KGF1922
Contextual Info: ODRKGF1922-07 Electronic Components KGF1922 Issue Date:May 20, 2005 RF Driver HEMT GENERAL DESCRIPTION The KGF1922, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1922 specifications are guaranteed to
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KGF1922
ODRKGF1922-07
KGF1922,
OT-89
KGF1922
30dBm)
05GHz
30dBm
H1 SOT-89 amplifier
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PDF
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KGF1922
Abstract: H1 SOT-89 amplifier 4824 8 pin
Contextual Info: ODRKGF1922-08 Electronic Components KGF1922 Issue Date:Jan 20, 2006 RF Driver HEMT GENERAL DESCRIPTION The KGF1922, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1922 specifications are guaranteed to
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Original
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KGF1922
ODRKGF1922-08
KGF1922,
OT-89
KGF1922
30dBm)
05GHz
30dBm
H1 SOT-89 amplifier
4824 8 pin
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PDF
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Micro-X Marking 865
Contextual Info: S IE M E N S CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AIGaAs/lnGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package
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OCR Scan
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CFY67
CFY67-06
CFY67-08
CFY67-08P
CFY67-10
CFY67-10P
CFY67-nnl:
QS9000
Micro-X Marking 865
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PDF
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AT1504
Abstract: AT1504R SSOP16 surface id4 d
Contextual Info: AT1504 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors
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AT1504
AT1504
16-pin
AT1504R
SSOP16
surface id4 d
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FET bias
Abstract: AT1506 AT1506R SSOP20
Contextual Info: AT1506 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors
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AT1506
AT1506
16-pin
FET bias
AT1506R
SSOP20
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PDF
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L239N
Abstract: E146D K1924
Contextual Info: ODRKGF1924-08 Electronic Components KGF1924 Issue Date:Jan 20, 2006 RF Driver HEMT GENERAL DESCRIPTION The KGF1924, housed in a ceramic package with integrated heat sink, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1924 specifications are guaranteed to
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Original
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KGF1924
ODRKGF1924-08
KGF1924,
KGF1924
L239N
E146D
K1924
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PDF
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k0604
Abstract: MAX 8985 zo 607 p 408 8772 P pseudomorphic HEMT GSO05553 S221 Q62705-K0603 ZO 607 MA 135
Contextual Info: GaAs HEMT CFH 120 Preliminary Data Sheet • • • • • Low noise pseudomorphic HEMT with high associated gain Low cost plastic package For low noise front end amplifiers up to 20 GHz For DBS down-converters Fully RF tested at 12 GHz 3 2 4 1 ESD: Electrostatic discharge sensitive device,
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Q62705-K0603
Q62705-K0604
GSO05553
k0604
MAX 8985
zo 607 p 408
8772 P
pseudomorphic HEMT
GSO05553
S221
Q62705-K0603
ZO 607 MA 135
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PDF
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