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    HEMT MARKING K Search Results

    HEMT MARKING K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-100P
    		Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT PDF Buy
    MG80C186-10/BZA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    		Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy
    54121/BCA
    		Rochester Electronics LLC 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) PDF Buy

    HEMT MARKING K Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GSO05553

    Abstract: Q62702-G117 CFH77 HEMT marking P
    Contextual Info: GaAs HEMT CFH 77 Target Data Sheet • • • • Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-4 Type Marking Ordering Code


    Original     		Q62702-G117 GSO05553 GSO05553 Q62702-G117 CFH77 HEMT marking P PDF

    GS 9521

    Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
    Contextual Info: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		CFH120 CFH120-08 CFH120-10 GS 9521 CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K PDF

    MAX 8985

    Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
    Contextual Info: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		CFH120 CFH120-08 Q62705-K0603 CFH120-10 Q62705-K0604 MAX 8985 pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10 PDF

    CFY77-10

    Abstract: HEMT HEMT marking K 036 906 051 VS005553
    Contextual Info: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type


    OCR Scan     		VS005553 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 CFY77-10 HEMT HEMT marking K 036 906 051 VS005553 PDF

    CFY 18

    Abstract: HEMT marking D HEMT marking K VS005553
    Contextual Info: SIEMENS AIGaAs / InGaAs HEMT CFY77 Datasheet Features * Very low noise •V ery high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters 4 * 2 VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		CFY77 VS005553 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 CFY 18 HEMT marking D HEMT marking K VS005553 PDF

    M 6965

    Abstract: HEMT marking D CFH400T 72482 HEMT marking P 74923 HEMT marking K
    Contextual Info: CFH400T P - HEMT Target Datasheet Features Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz F = 0.6 dB; Ga = 15.5 dB @ 3V; 10mA;


    Original     		CFH400T M 6965 HEMT marking D CFH400T 72482 HEMT marking P 74923 HEMT marking K PDF

    cfy siemens

    Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
    Contextual Info: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters


    Original     		CFY77-08 Q62702-F1549 CFY77-10 Q62702-F1559 cfy siemens CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K PDF

    6943-3

    Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications


    Original     		OT343 CFH800 Rn/50 6943-3 PDF

    transistor Zo 105

    Abstract: 6943-3 55086 HEMT marking P 05973
    Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH800 OT343 D-130 Rn/50 transistor Zo 105 6943-3 55086 HEMT marking P 05973 PDF

    transistor zo 107

    Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
    Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor PDF

    TGA2576-FL

    Abstract: GaN hemt TGA2576
    Contextual Info: TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier Applications • • • • Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features • • • • • • Functional Block Diagram Frequency Range: 2.5 – 6 GHz Psat: 45.5 dBm @ Pin = 26 dBm


    Original     		TGA2576-FL TGA2576-FL GaN hemt TGA2576 PDF

    HEMT marking P

    Contextual Info: S IE M E N S CFY66 H/Re/K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers •


    OCR Scan     		CFY66 CFY67) CFY66-08 CFY66-08P CFY66-10 CFY66-10P CFY66-nnl QS9000 HEMT marking P PDF

    transistor zo 107

    Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
    Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor PDF

    K1924

    Abstract: cw marking sot89 162190 RF Driver HEMT
    Contextual Info: ODRKGF1924-06 Electronic Components KGF1924 Issue Date:Jan 20, 2005 RF Driver HEMT GENERAL DESCRIPTION The KGF1924, housed in a ceramic package with integrated heat sink, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1924 specifications are guaranteed to


    Original     		KGF1924 ODRKGF1924-06 KGF1924, KGF1924 K1924 cw marking sot89 162190 RF Driver HEMT PDF

    H1 SOT-89 amplifier

    Abstract: H1 SOT-89 RF amplifier 94358 E33D
    Contextual Info: ODRKGF1922-06 Electronic Components KGF1922 Issue Date:Jan 20, 2005 RF Driver HEMT GENERAL DESCRIPTION The KGF1922, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1922 specifications are guaranteed to


    Original     		KGF1922 ODRKGF1922-06 KGF1922, OT-89 KGF1922 30dBm) 05GHz 30dBm H1 SOT-89 amplifier H1 SOT-89 RF amplifier 94358 E33D PDF

    micro-x mhz ghz microwave

    Abstract: Micro-X Marking 865
    Contextual Info: CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor  Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT  For professional super low-noise amplifiers  For frequencies from 500 MHz to > 20 GHz  Hermetically sealed microwave package


    Original     		CFY67 CFY67-08 CFY67-08P CFY67-10 CFY67-10P CFY67-nnl: micro-x mhz ghz microwave Micro-X Marking 865 PDF

    K1924

    Abstract: K-192 Z050
    Contextual Info: ODRKGF1924-07 Electronic Components KGF1924 Issue Date:May 20, 2005 RF Driver HEMT GENERAL DESCRIPTION The KGF1924, housed in a ceramic package with integrated heat sink, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1924 specifications are guaranteed to


    Original     		KGF1924 ODRKGF1924-07 KGF1924, KGF1924 K1924 K-192 Z050 PDF

    H1 SOT-89 amplifier

    Abstract: KGF1922
    Contextual Info: ODRKGF1922-07 Electronic Components KGF1922 Issue Date:May 20, 2005 RF Driver HEMT GENERAL DESCRIPTION The KGF1922, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1922 specifications are guaranteed to


    Original     		KGF1922 ODRKGF1922-07 KGF1922, OT-89 KGF1922 30dBm) 05GHz 30dBm H1 SOT-89 amplifier PDF

    KGF1922

    Abstract: H1 SOT-89 amplifier 4824 8 pin
    Contextual Info: ODRKGF1922-08 Electronic Components KGF1922 Issue Date:Jan 20, 2006 RF Driver HEMT GENERAL DESCRIPTION The KGF1922, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1922 specifications are guaranteed to


    Original     		KGF1922 ODRKGF1922-08 KGF1922, OT-89 KGF1922 30dBm) 05GHz 30dBm H1 SOT-89 amplifier 4824 8 pin PDF

    Micro-X Marking 865

    Contextual Info: S IE M E N S CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AIGaAs/lnGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package


    OCR Scan     		CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P CFY67-nnl: QS9000 Micro-X Marking 865 PDF

    AT1504

    Abstract: AT1504R SSOP16 surface id4 d
    Contextual Info: AT1504 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors


    Original     		AT1504 AT1504 16-pin AT1504R SSOP16 surface id4 d PDF

    FET bias

    Abstract: AT1506 AT1506R SSOP20
    Contextual Info: AT1506 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors


    Original     		AT1506 AT1506 16-pin FET bias AT1506R SSOP20 PDF

    L239N

    Abstract: E146D K1924
    Contextual Info: ODRKGF1924-08 Electronic Components KGF1924 Issue Date:Jan 20, 2006 RF Driver HEMT GENERAL DESCRIPTION The KGF1924, housed in a ceramic package with integrated heat sink, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1924 specifications are guaranteed to


    Original     		KGF1924 ODRKGF1924-08 KGF1924, KGF1924 L239N E146D K1924 PDF

    k0604

    Abstract: MAX 8985 zo 607 p 408 8772 P pseudomorphic HEMT GSO05553 S221 Q62705-K0603 ZO 607 MA 135
    Contextual Info: GaAs HEMT CFH 120 Preliminary Data Sheet • • • • • Low noise pseudomorphic HEMT with high associated gain Low cost plastic package For low noise front end amplifiers up to 20 GHz For DBS down-converters Fully RF tested at 12 GHz 3 2 4 1 ESD: Electrostatic discharge sensitive device,


    Original     		Q62705-K0603 Q62705-K0604 GSO05553 k0604 MAX 8985 zo 607 p 408 8772 P pseudomorphic HEMT GSO05553 S221 Q62705-K0603 ZO 607 MA 135 PDF