HEMT LOW NOISE DIE Search Results
HEMT LOW NOISE DIE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFM31PC276D0E3L | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
FO-LSDUALSCSM-003 |
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Amphenol FO-LSDUALSCSM-003 SC-SC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFN-LS Low Smoke) - 2 x SC Male to 2 x SC Male 3m | |||
CS-DSLSZH25MF-002.5 |
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Amphenol CS-DSLSZH25MF-002.5 25-Pin (DB25) LSZH Low Smoke D-Sub Cable - Double Shielded + EMI Cage - Male / Female 2.5ft |
HEMT LOW NOISE DIE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Micro-X marking "K"
Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
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MGF4941CL MGF4941CL 4000pcs Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3 | |
Contextual Info: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency |
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RO4350B ROGERS
Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
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MGF4941CL MGF4941CL AEC-Q101 4000pcs RO4350B ROGERS transistor "micro-x" "marking" 3 RO4350B max current GD-32 low noise Micro-X marking "K" RO4350B | |
fet transistor a03
Abstract: MGFC4419
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MGFC4419G MGFC4419G 12GHz fet transistor a03 MGFC4419 | |
GaAs FET HEMT Chips
Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor
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MGFC4453A MGFC4453A 12GHz 25pcs GaAs FET HEMT Chips on 5295 transistor transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor | |
2SK676
Abstract: GaAs FET HEMT Chips
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2SK676H5 2SK676H 2SK676 GaAs FET HEMT Chips | |
TRW mmicContextual Info: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for |
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TLH124C TLH124C 90-degree 50-ohm 9701455-S-J1 TRW mmic | |
Contextual Info: MECKULNAT Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 12 – 15 GHz full performance Frequency Range Small Signal Gain > 22 dB Noise Figure: < 1.75 dB P1dB > 21 dBm, Psat > 27 dBm Output TOI > 29 dBm |
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Contextual Info: MECKULNA2 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 13 – 16 GHz full performance Frequency Range Small Signal Gain > 24.5 dB Noise Figure: < 2.5 dB P1dB > 21.5 dBm, Psat > 29.5 dBm Output TOI > 30 dBm |
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FHX35LG
Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
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FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 FCSI0598M200 FHX35LG FHX35 fujitsu hemt fujitsu gaas fet hemt low noise die | |
ATF-38143
Abstract: ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2
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ATF-38143 OT-343 SC-70 OT-343) SC-70) ATF-38143 5968-7868E ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2 | |
low noise amplifier ghz
Abstract: amplifier 1 2 ghz
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HMC-ALH482 HMC-ALH482 low noise amplifier ghz amplifier 1 2 ghz | |
FHX35
Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
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FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 Co4888 FHX35 eudyna FHX35LG hemt low noise die fujitsu gaas fet | |
HMC-ALH444
Abstract: ALH444 hemt 20 dB 14 ghz GaAs 12 GHZ gain noise gate compression
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HMC-ALH444 HMC-ALH444 ALH444 hemt 20 dB 14 ghz GaAs 12 GHZ gain noise gate compression | |
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Contextual Info: HMC-ALH482 v04.1009 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz |
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HMC-ALH482 HMC-ALH482 | |
Contextual Info: HMC-ALH482 v01.1207 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz |
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HMC-ALH482 HMC-ALH482 | |
Contextual Info: HMC-ALH482 v04.1009 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz |
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HMC-ALH482 HMC-ALH482 | |
Contextual Info: HMC-ALH482 v00.0907 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz |
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HMC-ALH482 HMC-ALH482 | |
Contextual Info: HMC-ALH482 v03.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz |
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HMC-ALH482 HMC-ALH482 | |
sony 0642Contextual Info: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron |
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2SK677H5 2SK677H5 D0G312b sony 0642 | |
amplifier schematic diagram SHARP
Abstract: HMC-ALH444
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HMC-ALH444 HMC-ALH444 amplifier schematic diagram SHARP | |
alh444
Abstract: HMC-ALH444
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HMC-ALH444 HMC-ALH444 alh444 | |
Contextual Info: HMC-ALH444 v01.1207 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems |
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HMC-ALH444 HMC-ALH444 | |
HMC-ALH445Contextual Info: HMC-ALH445 AMPLIFIERS - LOW NOISE - CHIP v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Typical Applications Features This HMC-ALH445 is ideal for: Noise Figure: 3.9 dB @ 28 GHz • Wideband Communication Systems Gain: 9 dB • Point-to-Point Radios |
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HMC-ALH445 HMC-ALH445 |