HEMT LOW NOISE DIE Search Results

Micro-X marking "K"

Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
Contextual Info: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz

Contextual Info: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency

RO4350B ROGERS

Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
Contextual Info: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101

fet transistor a03

Abstract: MGFC4419
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G InGaAs HEMT DESCRIPTION The MGFC4419G low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. OUTLINE DRAWING FEATURES • Low noise figure NFmin. = 0.50dB (MAX.) • High associated gain

GaAs FET HEMT Chips

Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4453A InGaAs HEMT DESCRIPTION The M G FC4453A low-noise HEMT High Electron Mobility OUTLINE DRAWING Transistor is designed for use in X to K band amplifiers. Unit : u m FEATURES Low noise figure @ f=12GHz NFmin. = 0.40dB (TYP.)

2SK676

Abstract: GaAs FET HEMT Chips
Contextual Info: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high

TRW mmic

Contextual Info: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for

Contextual Info: MECKULNAT Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 12 – 15 GHz full performance Frequency Range Small Signal Gain > 22 dB Noise Figure: < 1.75 dB P1dB > 21 dBm, Psat > 27 dBm Output TOI > 29 dBm

Contextual Info: MECKULNA2 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 13 – 16 GHz full performance Frequency Range Small Signal Gain > 24.5 dB Noise Figure: < 2.5 dB P1dB > 21.5 dBm, Psat > 29.5 dBm Output TOI > 30 dBm

FHX35LG

Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
Contextual Info: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.

ATF-38143

Abstract: ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2
Contextual Info: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-38143 Features Surface Mount Package SOT-343 • Low Noise Figure Description Agilent Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead

low noise amplifier ghz

Abstract: amplifier 1 2 ghz
Contextual Info: HMC-ALH482 AMPLIFIERS - LOW NOISE - CHIP v00.0907 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz

FHX35

Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
Contextual Info: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.

HMC-ALH444

Abstract: ALH444 hemt 20 dB 14 ghz GaAs 12 GHZ gain noise gate compression
Contextual Info: HMC-ALH444 AMPLIFIERS - LOW NOISE - CHIP v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems

Contextual Info: HMC-ALH482 v04.1009 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz

Contextual Info: HMC-ALH482 v01.1207 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz

Contextual Info: HMC-ALH482 v04.1009 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz

Contextual Info: HMC-ALH482 v00.0907 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz

Contextual Info: HMC-ALH482 v03.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz

sony 0642

Contextual Info: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron

amplifier schematic diagram SHARP

Abstract: HMC-ALH444
Contextual Info: HMC-ALH444 v02.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems

alh444

Abstract: HMC-ALH444
Contextual Info: HMC-ALH444 v02.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems

Contextual Info: HMC-ALH444 v01.1207 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems

HMC-ALH445

Contextual Info: HMC-ALH445 AMPLIFIERS - LOW NOISE - CHIP v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Typical Applications Features This HMC-ALH445 is ideal for: Noise Figure: 3.9 dB @ 28 GHz • Wideband Communication Systems Gain: 9 dB • Point-to-Point Radios