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HE8404SG Datasheets (5)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HE8404SG		Hitachi Semiconductor	LED, Single, 820nm Wave Length	Original	PDF	29.1KB	7
HE8404SG		Hitachi Semiconductor	GaAlAs Infrared Emitting Diode	Original	PDF	18.52KB	3
HE8404SG		Unknown	GaAlAs Infrared Emitting Diode	Original	PDF	186.96KB	6
HE8404SG		OpNext	GaAlAs Infrared Emitting Diode	Original	PDF	87.41KB	4
HE8404SG		Renesas Technology	GaAlAs Infrared Emitting Diode	Original	PDF	20.39KB	3

HE8404SG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GaAs 850 nm Infrared Emitting Diode Abstract: HE8404SG opnext Contextual Info: HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997B Z Rev.2 Mar. 2005 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.	Original	HE8404SG ODE-208-997B HE8404SG HE8404SG: GaAs 850 nm Infrared Emitting Diode opnext	PDF
HE8404SG Contextual Info: HE8404SG GaAlAs Infrared Emitting Diode Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency, high output	Original	HE8404SG HE8404SG	PDF
RCV5932 Abstract: DR9301 LB7671 laser DFB 1550nm 10mW single hitachi DC9300 Photodiode, 1550nm, butterfly package laser DFB 1550nm 10mW DC9300 Arrayed Waveguide Grating 1550nm Laser Diode with butterfly pin package Contextual Info: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage DVD-RAM , Hitachi offers a complete line-up of 635nm to 830nm	Original	635nm 830nm HE7601 HE8404 HE8807 HE8811 HE8812 HE7601SG HE8404SG RCV5932 DR9301 LB7671 laser DFB 1550nm 10mW single hitachi DC9300 Photodiode, 1550nm, butterfly package laser DFB 1550nm 10mW DC9300 Arrayed Waveguide Grating 1550nm Laser Diode with butterfly pin package	PDF
OPR 12 PHOTOCELL Abstract: photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed Contextual Info: Hitachi Optodevice Data Book ADE-408-001E Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In	Original	ADE-408-001E HR1201CX OPR 12 PHOTOCELL photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed	PDF
HL8312E Abstract: 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE8815VG HL7841MG HE7601 Contextual Info: HITACHI/ OPTOELECTRONICS SME T> 44^fc.20S G 0 1 2 0 4 7 07T • HL7841MG (Preliminary) GaAIAs LD 7 Description The HL7841MG is a 0.78 (im band GaAIAs laser diode with a multi-quantum well (MQW) structure. It is especially suitable as a light source for laser beam printers with its low threshold current and low slope	OCR Scan	HL7841MG G012047 HL7841MG HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HL8312E 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE7601	PDF
HL7802E Abstract: HE8807SG HE8813VG HE8815VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040 Contextual Info: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.	OCR Scan	HL7802E/G HL7802E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HL7802E HE8807SG HE8813VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040	PDF
HE8403 Contextual Info: §6. Reliability This section covers points which particularly affect the operating life light emitting devices, and provides some examples which should be studied before proceeding with your system design. 6.1 Characteristic Drift W hen optical emission devices such as the LD or IRED are operated in the forward mode, crystal defects	OCR Scan	HE8815VG HE8813VG HE8811, HE8812SG, HE8404SG, HE7601SG HE8807 HE8403 HE1303	PDF
2544S Abstract: HE8807CL HL785 Contextual Info: Package Variations Laser diodes Packages Open-air type ^ Features ^ Applicable Products * For experimental use • For module assembly HL1362A, HL1551A • For module assembly HL1362AC, HL1551AC • For module assembly HL1553 • With built-in monitor-photodiode	OCR Scan	HL1362A, HL1551A HL1362AC, HL1551AC HL6712G, HL6713G HL1553 HL6312G, HL6313G, HL6714G, 2544S HE8807CL HL785	PDF