HE60 Search Results

HE6035

Contextual Info: Quartz SMD, Epoxy HE6035/2 HE6035/4 Features: - Application: Bluetooth, wireless LAN - Ultra-thin and small leadress type - Automatic mounting is enabled by emboss taping - Reflow soldering - RoHS conform Specifications Symbol f Df/f CL HE6035 12.000MHz ~ 40.000MHz

HE6009

Abstract: HJ122
Contextual Info: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2002.08.13 Page No. : 1/4 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ122 is designed for use in general purposes and low speed switching applications.

HJ41C

Abstract: Y2 MARKING marking Y1 transistor
Contextual Info: HI-SINCERITY Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications.

HE6009

Abstract: HJ122 Y2 MARKING
Contextual Info: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications.

y2 marking

Abstract: A1 marking code amplifier HJ3669 a5 marking
Contextual Info: HI-SINCERITY Spec. No. : HE6029 Issued Date : 1997.10.24 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.

HE6035

Contextual Info: Quartz SMD HE6035/2 HE6035/4 Features: - Application: Bluetooth, wireless LAN - Ultra-thin and small leadless type - Automatic mounting is enabled by emboss taping Specifications Symbol f Äf/f CL HE6035 11.000MHz ~ 40.000MHz ±20ppm ~ ±50ppm 10pF ~ 30pF

Contextual Info: HI-SINCERITY Spec. No. : HE6014 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

Contextual Info: HI-SINCERITY Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

HJ112

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2002.08.13 Page No. : 1/4 HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and lowspeed switching applications.

HJ3669

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6029-B Issued Date : 1997.10.24 Revised Date : 2000.11.01 Page No. : 1/3 HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.

HLB121J

Abstract: VCB-55
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6027 Issued Date : 1996.11.11 Revised Date : 2001.05.01 Page No. : 1/3 HLB121J NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121J is a medium power transistor designed for use in

HJ772

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.08.12 Page No. : 1/4 HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

HJ50

Abstract: vce 500v NPN Transistor
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6016 Issued Date : 1996.04.12 Revised Date : 2002.02.26 Page No. : 1/3 HJ50 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ50 is designed for line operated audio output amplifier switch mode power supply drivers and other switching applications.

HJ3953

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6021-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HJ3953 NPN EPITAXIAL PLANAR TRANSISTOR Description High-definition CRT display video output, wide-band amp, Features • High fT: fT =400MHz

Contextual Info: HE600 FEATURES • • • • • • • • • • • 120/240VAC 3∅, 4W SECONDARY SURGE "LIGHTNING" ARRESTER Industrial/Commercial Version MOV Circuit Design Made in America utilizing American Components Cost Effective Reliable Solid-State Protection

HE600

Abstract: SPD600 automatic irrigation system lightning arrester HE4803 HE500 HE510 High Voltage Power Systems metal oxide varistor 500V high voltage surge arrester
Contextual Info: HE600 120/240VAC 3∅ ∅, 4W FEATURES • • • • • • • • • • • SECONDARY SURGE "LIGHTNING" ARRESTER Industrial/Commercial Version MOV Circuit Design Made in America utilizing American Components Cost Effective Reliable Solid-State Protection

A1 marking code amplifier

Abstract: HJ117
Contextual Info: HI-SINCERITY Spec. No. : HE6031 Issued Date : 1998.02.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ117 is designed for use in general purpose amplifier and low-speed switching applications.

HJ112

Abstract: A1 marking code amplifier HE6030
Contextual Info: HI-SINCERITY Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and low-speed switching applications.

HJ10387

Abstract: A1 marking code amplifier Y2 MARKING HE6028
Contextual Info: HI-SINCERITY Spec. No. : HE6028 Issued Date : 1997.06.24 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ10387 is designed for general purpose amplifier and low speed switching applications.

Contextual Info: HI-SINCERITY Spec. No. : HE6001 Issued Date : 1996.02.26 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ31C is designed for use in general purpose amplifier and switching applications.

HE6020-B

Abstract: HJ1538 120Vmin
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6020-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HJ1538 PNP EPITAXIAL PLANAR TRANSISTOR Description High-definition CRT display video output, wide-band amp. Features • High fT: fT=400MHz

HJ882

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6014 Issued Date : 1996.04.12 Revised Date : 2003.08.12 Page No. : 1/4 HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

HJ340

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6012-B Issued Date : 1996.04.12 Revised Date : 2000.11.01 Page No. : 1/3 HJ340 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ340 is designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications.

HJ127

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2003.01.17 Page No. : 1/3 HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Description • High DC current gain • Built-in a damper diode at E-C Absolute Maximum Ratings Ta=25°C