HCA62 Search Results

62A17

Abstract: HCA62A17 62A50 18PDIP 68-LCC
Contextual Info: í Order this data sheet by HCA62A00/D M MOTOROLA HCA62A00 Series SEM ICO NDUCTO RS P.O B O X 20912 • PHOENIX, A R IZ O N A 85036 HCA62A00 SERIES CMOS MACROCELL ARRAYS The HCA62A00 series m acrocell arrays are im plem ented in sil­ icon gate, 2-m icron draw n gate length, dual-layer metal intercon­

62A50

Abstract: 62A17 Mil Std 883, Method 1008 4 bit ALU USING VLSI grid tie inverter schematics Motorola modem schematic diagram HCA62A00 HCA62A17 HCA62A25 DS1334
Contextual Info: Order this data sheet by HCA62A00/D M M O T O R O L A HCA62A00 Series S E M IC O N D U C T O R S P.O. BOX 20912 • PHO ENIX, A R IZ O N A 85036 HCA62A00 SERIES CMOS MACROCELL ARRAYS T he H C A 62A 00 series m acrocell arrays are im p le m e n te d in sil­

Contextual Info: Order this data sheet by HCA62A00/D M MOTOROLA HCA62A00 Series SEM ICO NDUCTO RS P.O. BOX 20912 • PHOENIX, ARIZO NA 85036 HCA62A00 SERIES CM OS MACROCELL ARRAYS T h e H C A 62A 00 series m acrocell arrays are im p le m e n te d in sil­ icon gate, 2-m ic ro n d raw n gate len gth , d u a l-lay er m etal interco n ­

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

B705

Contextual Info: Order this data sheet by BCA6000ETL/D M MOTOROLA BCA6000ETL SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZO NA 85036 Advance Information HIGH PERFORMANCE BiMOS TTL-ECL-CMOS COMPATIBLE BCA6000ETL BiMOS ARRAY T his sp ecifica tion defines design and p erfo rm a n ce re q u ire ­

HCA6348

Contextual Info: IN TR O D U C TIO N TO M O TO RO LA C M O S MACROCELL ARRAYS The M o to ro la H C A 6 0 0 0 Series M a cro ce ll A rrays M C A consists o f b oth 2 -m ic ro n and 3 -m ic ro n gate le n g th devices fa b ric a te d using a C M O S silico n -g a te 2 -la ye r m etal te ch n o lo g y . T h is te c h n o lo g y provides

TRANSISTOR B507

Abstract: transistor b734 transistor b527 TRANSISTOR B737 B734 transistor B722 TRANSISTOR DATA transistor B541 TRANSISTOR B509 b050 TRANSISTOR B511 transistor
Contextual Info: Order this data sheet by BCA6000ETL/D M M O T O R O L A . 5 x - r^ /u r BCA6000ETL SEM ICO NDUCTO RS P.O. BO X 20912 • PHO ENIX, A R IZ O N A 85036 A d v a n ce In fo rm atio n HIG H PER FO R M A N C E B iM O S TTL -E C L -C M O S CO M PATIBLE BCA6000ETL BiMOS ARRAY

motorola mca

Abstract: HCA6348 B02X-B05X HCA6306 ja 1620 HCA6206 HCA6212 HCA6225 HCA6238 HCA6248
Contextual Info: IN TR O D U C TIO N TO M O TO RO LA C M O S MACROCELL ARRAYS The M o to ro la H C A 6 0 0 0 Series M a cro ce ll A rrays M C A consists o f b oth 2 -m ic ro n and 3 -m ic ro n gate le n g th devices fa b ric a te d using a C M O S silico n -g a te 2 -la ye r m etal te ch n o lo g y . T h is te c h n o lo g y provides

2500ECL

Abstract: Motorola Bipolar Power Transistor Data Double Die IC 566 function generator HCA62A17 CMOS 4032 1987 Micron Technology Micron NAND bca 1st motorola ECL motorola mca
Contextual Info: BR334/D Rev 3 Motorola Semicustom gives the designer the same process-technology choices available for discrete-logic designs, and the option of Macrocell array or cell-based func­ tions for commercial and military applications. • For very high speeds — state-of-the-art ECL arrays.

HCA62A17

Contextual Info: BR334/D Rev 3 Motorola Semicustom gives the designer the same process-technology choices available for discrete-logic designs, and the option of Macrocell array or cell-based func­ tions for commercial and military applications. • For very high speeds — state-of-the-art ECL arrays.

transistor LT 6225

Abstract: lt 6225 HCA6348
Contextual Info: INTRODUCTION TO MOTOROLA CMOS MACROCELL ARRAYS The M otorola H C A6000 Series Macrocell Arrays MCA consists o f both 2-m icron and 3-m icron gate length devices fabricated using a CMOS silicon-gate 2-layer metal technology. T his technology provides high speed perform ance w hile m aintaining the high