DS1334 Search Results

62A17

Abstract: HCA62A17 62A50 18PDIP 68-LCC
Contextual Info: í Order this data sheet by HCA62A00/D M MOTOROLA HCA62A00 Series SEM ICO NDUCTO RS P.O B O X 20912 • PHOENIX, A R IZ O N A 85036 HCA62A00 SERIES CMOS MACROCELL ARRAYS The HCA62A00 series m acrocell arrays are im plem ented in sil­ icon gate, 2-m icron draw n gate length, dual-layer metal intercon­

Contextual Info: DS1345Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR FEATURES DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention 34 33 32 31 30 29 28 27 26 25 24 23 • Data is automatically protected during V cc power

DS1345

Abstract: DS1345AB DS1345Y DS1334
Contextual Info: DS1345Y/AB PRELIMINARY DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • Built–in lithium battery provides more than 10 years of data retention • Data is automatically protected during VCC power loss • Power supply monitor resets processor when VCC

Contextual Info: DS1345Y/AB m a • I a m U A L L A 3 SEMICONDUCTOR FEATURES DS1345Y/AB 1024K Nonvolatile SRAM w j^ Battery Monitor PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC NC A 14 A 13 A 12 A11 A 10 A9 A8 A7 A6 A5 A4 A3 A2 A1

Contextual Info: DS1345Y/AB DS1345Y/AB DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Power supply monitor resets processor when V cc

Contextual Info: DS1345Y/AB • % a | ■ a D S 1 3 4 5 Y /A B a 1024K Nonvolatile SRAM U A L L A 9 with Battery Monitor s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 y e a rs m in im u m d a ta re te n tio n in th e a b s e n c e of e x te rn a l p o w e r 34 33

Contextual Info: DS1345Y/AB P R E L IM IN A R Y DS1345Y/AB DALLAS 1024K Nonvolatile SRAM with Battery Monitor SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x R volatile static RAM or EEPROM

"Battery Monitor"

Abstract: 34-pin DS1345 DS1345AB DS1345Y DS9034PC
Contextual Info: DS1345Y/AB DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Power supply monitor resets processor when VCC

2 bit magnitude comparator

Abstract: NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400
Contextual Info: A S I C APPLICATION SPECIFIC INTEGRATED CIRCUITS "i NCR 62A00 2-Micron Gate Array Products fM H ffik • 2-micron drawn, 1.5-micron effective, DLM process • 600 to 8,500 equivalent gate complexity with up to 95% utilization • Commercial, industrial, automotive and

DS1345

Abstract: DS1345AB DS1345Y DS9034PC
Contextual Info: DS1345Y/AB DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Power supply monitor resets processor when VCC

Contextual Info: DS1345Y/AB PRELIMINARY DS1345Y/AB DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT FEATURES • Built-in lithium battery provides more than 10 years of data retention • Data is automatically protected during Vcc power loss

Contextual Info: DS1345Y/AB PRELIM INARY DS1345Y/AB DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM or EEPROM