HBT 05 Search Results

CGA-6618Z

Abstract: CGA6618 CGA-6618 CGA6618ZSB CGA6618ZSQ ETC1-1-13
Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed

macom marking

Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC amplifier. Designed

Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC amplifier. Designed

CGA-6681Z

Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed

CGA6618Z

Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000 MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed

CGR0218Z

Abstract: CGR-0218Z CGR0218ZSR CGA6618 CGR0218ZSB CGR0218ZSQ CGR0218ZTR13 CGR0218ZTR7 RF MICRO DEVICES SOIC-8
Contextual Info: CGR-0218Z CGR-0218Z Push-Pull 5MHz to 210 MHz High Linearity InGaP HBT Amplifier PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description Features RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed

Contextual Info: CGR-0218Z CGR-0218Z Push-Pull 5MHz to 210 MHz High Linearity InGaP HBT Amplifier PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description Features RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed

MARKING G5D

Abstract: HS350 PG2314T5N
Contextual Info: GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in

CAPACITOR 33PF

Abstract: 8653 p FPD1000AS T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
Contextual Info: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features „ „ „ „ Optimum Technology Matching Applied „ „ GaAs HBT „ DE GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS W SiGe HBT

12-PIN

Abstract: HS350 PG2301T5L
Contextual Info: GaAs HBT INTEGRATED CIRCUIT PG2301T5L POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The μPG2301T5L is a GaAs HBT MMIC power amplifier for Bluetooth Class 1, and other ISM band applications. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in

Contextual Info: DATA SHEET GaAs HBT INTEGRATED CIRCUIT µPG2301T5L POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The µPG2301T5L is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in

nec 2412

Abstract: 2412 nec 60788
Contextual Info: DATA SHEET GaAs HBT INTEGRATED CIRCUIT PG2315T5T 2.4 GHz SINGLE BAND POWER AMPLIFIER FOR W-LAN DESCRIPTION The μPG2315T5T is GaAs HBT MMIC power amplifier which were developed for W-LAN. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in

MARKING G5D

Abstract: PG2314T5N defects NEC 0745 PG10624EJ02V0DS HS350 Bluetooth class 1
Contextual Info: DATA SHEET GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in

Contextual Info: DATA SHEET GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in

Collector Contact Optimization in GaAs HBT Manufacturing

Contextual Info: Collector Contact Optimization in GaAs HBT Manufacturing Lam Luu-Henderson, Daniel Weaver, Heather Knoedler, Shiban Tiku lam.luu@skyworksinc.com Skyworks Solutions, Inc. Newbury Park, CA 91320 Keywords: Collector, Resistance, GaAs HBT, AuGe, Ni, Alloy Abstract

SXT-289

Abstract: transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC
Contextual Info: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

marking 25 mmic sot-89

Abstract: RF transistor marking IN SOT-89 MARKING 30 SOT89 DBM
Contextual Info: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

MCH18

Abstract: SXA-389B xa3b EL115
Contextual Info: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

Contextual Info: Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Product Description SPA-1318 Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

MCH18

Abstract: MCR03 SPA-1118 SPA-1118Z TAJB106K020R
Contextual Info: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

200 watt schematics power amp

Abstract: MCH18 MCR03 SPA-1118 SPA-1118Z TAJB106K020R Sirenza Microdevices al
Contextual Info: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

msl 9350

Abstract: jack P4 GSM900 RF3802 RF3802PCBA-410 RF3802PCBA-411 marking code c45 23 C4833
Contextual Info: RF3802 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs HBT Pre-Driver for Basestation Amplifiers • Class AB Operation for GSM/EDGE/CDMA • Power Amplifier Stage for Commercial Wireless Transmitter Applications

Contextual Info: Preliminary Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial