PG10624EJ02V0DS Search Results

marking 6-PIN PLASTIC TSON

Abstract: HS350
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed

MARKING G5D

Abstract: HS350 PG2314T5N
Contextual Info: GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in

MARKING G5D

Abstract: PG2314T5N defects NEC 0745 PG10624EJ02V0DS HS350 Bluetooth class 1
Contextual Info: DATA SHEET GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in