HAT2200WP Search Results

HAT2200WP

Abstract: HAT2200WP-EL-E
Contextual Info: HAT2200WP Silicon N Channel Power MOS FET Power Switching REJ03G1678-0300 Rev.3.00 May 27, 2008 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 22 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A

HAT2200WP

Abstract: HAT2200WP-EL-E
Contextual Info: Preliminary Datasheet HAT2200WP Silicon N Channel Power MOS FET Power Switching REJ03G1678-0310 Rev.3.10 May 13, 2010 Features •    Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 22 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet HAT2200WP Silicon N Channel Power MOS FET Power Switching REJ03G1678-0310 Rev.3.10 May 13, 2010 Features •    Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 22 m typ. (at VGS = 10 V)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

HAT1128R

Abstract: RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB
Contextual Info: April 2010 Renesas Electronics Power MOSFETs for DC/DC Converter – 1 Improving Supply Efficiency by Low Loss Features Low ON resistance, High-speed switching, Low Qg. Applications Merits Improve power supply efficiency for energy saving , Fast response

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

H7N1009MD

Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility