HAT2192WP
Abstract: HAT2192WP-EL-E PWSN0008DA-A renesas shipping information Diode BAY 21
Contextual Info: HAT2192WP Silicon N Channel Power MOS FET Power Switching REJ03G0533-0100 Rev.1.00 Feb.23.2005 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A Package name: WPAK 5 6 7 8 D D D D 5 6 7 8
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HAT2192WP
Abstract: HAT2192WP-EL-E
Contextual Info: HAT2192WP Silicon N Channel Power MOS FET Power Switching REJ03G0533-0200 Rev.2.00 Oct 09, 2009 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A Package name: WPAK 5 6 7 8 D D D D 5 6 7 8
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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rej01g0001-0400rjh3047rjh3077rjp3047+7rjh3047dpkrjp3049rjp6065rjp3053rjp3042smd code fx mosfetrjp6055
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HAT1128R
Abstract: RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB
Contextual Info: April 2010 Renesas Electronics Power MOSFETs for DC/DC Converter – 1 Improving Supply Efficiency by Low Loss Features Low ON resistance, High-speed switching, Low Qg. Applications Merits Improve power supply efficiency for energy saving , Fast response
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rjk0305dpbrjk0331dpbhat2188wprjk2055dpa+16rjk2057dpahat2191wphat2192wphat2193wprjk2555dparjk2557dpahat1128rrjj0315dsphat1125hrjk0351dparjk0380dpahat2215rhat1128hat2215hat1054rrjk0329dpb
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RJK03P7DPA
Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position
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0000-apae-aa-12-0177-1pae-aa-12-0049-1rjk03p7dpa+9np109n055pujrjh60d7bdpqrjh60t04rjp65t43np75n04yugnp60n055muknp109n04pukrju6052sdpd-e0ps2761b-1
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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HAT2192WP
Abstract: HAT2192WP-EL-E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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