HAT2173H Search Results

HAT2173H-EL-E

Abstract: HAT2173H
Contextual Info: HAT2173H Silicon N Channel Power MOS FET Power Switching REJ03G0030-0200 Rev.2.00 Sep 26, 2005 Features • • • • • High speed switching Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 12 mΩ typ. (at VGS = 10 V)

HAT2173H

Abstract: RG 58 AU
Contextual Info: HAT2173H Silicon N Channel Power MOS FET Power Switching REJ03G0030-0100Z Rev.1.00 May.06.2003 Features • • • • Capable of 8V gate drive Low drive current High density mounting Low on-resistance RDS on = 12 mΩ typ. (at VGS = 10 V) Outline LFPAK

Contextual Info: Using the UCC28230EVM User's Guide Literature Number: SLUU331 July 2008 User's Guide SLUU331 – July 2008 Intermediate Bus Converter 300-W Evaluation Module 1 Introduction The UCC28230 evaluation module, is a 300-W intermediate bus converter, providing an unregulated

voltage regulator 9V to 3,3V

Abstract: PA0184 IHLP2525CZERR10M PA18-3 flyback converter 10A 6TPE220MI 2N3906 TP0307 BAS16 LT3837
Contextual Info: advertisement Flyback Controller Simplifies Design of Low Input Voltage DC/DC Converters – Design Note 410 David Burgoon Introduction Small, high efficiency DC/DC converters are critical to the design of leading-edge electronics. Achieving high accuracy and efficiency traditionally means adding extra

HAT2173H-EL-E

Abstract: HAT2173H
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

76V0A

Abstract: MCHP-045-V31-1 AN1335 48V 100w SMPS forward High-Speed PWM DS70323 buck boost converter closed loop in matlab "High-Speed PWM" DS70323 DS70296 DSC full-bridge dsPIC dsPIC33FJ16GS502
Contextual Info: AN1335 Phase-Shifted Full-Bridge PSFB Quarter Brick DC/DC Converter Reference Design Using a dsPIC DSC Author: Ramesh Kankanala Microchip Technology Inc. ABSTRACT This application note provides the digital implementation of a telecom input 36 VDC-76 VDC to output 12 VDC,

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

rjk5020

Abstract: HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174
Contextual Info: April 2010 Renesas Electronics High-speed and Low Ron Series Power MOSFETs for Synchronous Rectification of AC/DC Converter Features Low ON resistance Low input capacitance Low Qg High avalanche destruction tolerance High diode destruction tolerance Application Equipment

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HAT1125H

Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
Contextual Info: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient

H7N1009MD

Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility