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    HAT1072H Search Results

    HAT1072H Datasheets (4)

    Renesas Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HAT1072H
    Renesas Technology Silicon P Channel Power MOS FET Original PDF 115.96KB 12
    HAT1072H
    Renesas Technology Silicon P Channel Power MOS FET Power Switching Original PDF 91.38KB 10
    HAT1072H
    Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 40A 5LFPAK Original PDF 9
    HAT1072H-EL-E
    Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 40A LFPAK Original PDF 9

    HAT1072H Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HAT1072H

    Contextual Info: HAT1072H Silicon P Channel Power MOS FET Power Switching REJ03G1155-0700 Previous: ADE-208-1534E Rev.7.00 Sep 07, 2005 Features • • • • Capable of –4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 3.6 mΩ typ (at VGS = –10 V)


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    hat1072hrej03g1155-0700ade-208-1534eptzz0005da-a PDF

    HAT1072H

    Abstract: P Channel Power MOS FET Power Switching Hitachi DSA0044
    Contextual Info: HAT1072H Silicon P Channel Power MOS FET Power Switching ADE-208-1534E Z 6th. Edition May 2002 Features • Capable of -4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.6 mΩ typ (at VGS = -10 V) Outline


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    hat1072hade-208-1534ep channel power mos fet power switchinghitachi dsa0044 PDF

    HAT1072H

    Contextual Info: HAT1072H Silicon P Channel Power MOS FET Power Switching REJ03G1155-0700 Previous: ADE-208-1534E Rev.7.00 Sep 07, 2005 Features • • • • Capable of –4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 3.6 mΩ typ (at VGS = –10 V)


    Original
    hat1072hrej03g1155-0700ade-208-1534eptzz0005da-a PDF

    HAT1072H

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    hat1072h PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


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    2sc5998c51392sc52472sc5907+162sd15042sj3612sk4392sk4942sk3349bcr5km-12l1002ds6020v4transistor bj 131-62sc 8550transistor 2sc1417hitachi 08122btransistor h9456030v42sc 805025aaj PDF

    HAT1072H

    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    hat1072h PDF

    HAT1072H

    Abstract: ADE-208-153
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    hat1072hade-208-153 PDF

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


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    3sk3093sk3173sk318bb101c+16bb102cbb301cbb302cbb304cbb305cbb501c2sc 85506020v46030v4hitachi 08122b2sc 8050hitachi 08123btransistor h945h945transistor c 6030v42sk3545 PDF

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


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    24empbrc124etpbrc143etpbrc144ecm+16cr3km-12fs10km-6fs10vs-6fs16km-6fs16vs-6hat3017r1002ds4008zb2sc 9012mp 1009 es2sc 805020aaj-8h6020v42sc14172sc 8550cr3as PDF

    Q13FC1450000614

    Abstract: avr vr3 AVR453 avr vr6 VR3 avr ATMEGA406 CONN2 Sim jumper Q13FC145 0-150VDC
    Contextual Info: AVR454 Users Guide - ATAVRSB100 - Smart Battery Development Board Features • • • • • • • • • Evaluation of ATmega406 as a smart battery controller Cell voltage simulator Charge/discharge current simulator 18-bit Coulomb Counter ADC for current measurements


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    avr454atavrsb100atmega40618-bit+1212-bitsb1002598c-avr-06/06q13fc1450000614avr vr3avr453avr vr6vr3 avrconn2sim jumperq13fc1450-150vdc PDF

    HAT1125H

    Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
    Contextual Info: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient


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    upa27xxut1ar07pf0002ed0100hat1125hff 0401+8hat2270hlfpak footprint renesasrjk305upa2749ut1arjk03c1dpbrjk305dpbupa2802t1lupa2807t1l PDF

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


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    cr3km-12cr6km-12cr8km-12o-220fn+16ot-89cr03am-16cr04am-12sc-59cr03am-12cr05am-12h7n1009mdhat2153rjtransistor fs10kmhat2180rpdiode h5nh7p1006mdimmobilizer antennacr3as-12hat1081rcr3as PDF