HAMAMATSU LOW DARK CURRENT APD Search Results

G8931-20

Abstract: low dark current APD SE-171 G893 hamamatsu low dark current APD KAPDB0120EA hamamatsu ingaas APD
Contextual Info: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .

LH0032

Contextual Info: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).

InGaAs apd photodiode

Abstract: G8931-04 Ge APD SE-171 KAPDC0005EC 1NA100 low dark current APD hamamatsu ingaas APD
Contextual Info: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON The G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET synchronous optical network , G-PON (gigabit-capable passive optical network) and GE-PON (gigabit ethernet-passive optical network).

Contextual Info: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .

G8931-20

Abstract: LH0032 SE-171 low dark current APD APD OTDR
Contextual Info: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .

Contextual Info: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .

LH0032

Contextual Info: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).

G8931-04

Abstract: LH0032 SE-171 OPTICAL NETWORK TERMINAL InGaAs apd photodiode
Contextual Info: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).

Contextual Info: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.

Contextual Info: APD Si APD S8664-55 Large area, low noise APD with enhanced short-wavelength sensitivity S8664-55 is an APD avalanche photodiode designed for short wavelength detection, featuring a large active area yet low noise and low terminal capacitance. S8664-55 also offers a high quantum efficiency at λ=400 nm and uniform gain over the entire active area, making it suitable for

1NA101

Abstract: S8890 APD S11519
Contextual Info: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.

G8931-03

Abstract: SE-171
Contextual Info: PHOTODIODE InGaAs APD G8931-03 High-speed response: 2.5 Gbps, active area: φ0.03 mm Features Applications l 2.5 Gbps operation l Low capacitance l Optical fiber communications • General rating Parameter Active area Symbol - Value φ0.03 Unit mm Symbol IF

Contextual Info: Devlp. PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm • General rating Parameter Active area ■ Absolute maximum ratings Parameter Forward current

G10519-14

Abstract: SE-171 STM-16 photodiode 1 Gbps 1.55
Contextual Info: PHOTODIODE InGaAs APD with preamp G10519-14 ROSA, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High sensitivity: 27 mV/µW λ=1.55 µm, M=10 l Differential output l Wide dynamic range: -5 to -33 dBm l Optical return loss: 35 dB

S6045

Abstract: S6045-01 S6045-02 S6045-03 S6045-04 S6045-05 S6045-06
Contextual Info: PHOTODIODE Si APD S6045 series Low temperature coefficient type APD for 800 nm band Features Applications l Low temperature coefficient: 0.4 V/˚C l High-speed response l High sensitivity, low noise l Optical fiber communications l Spatial light transmission

Avalanche photodiode APD

Abstract: G8931-03 SE-171 hamamatsu low dark current APD avalanche photodiode ingaas ghz hamamatsu avalanche photodiode ingaas ghz
Contextual Info: PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm l Optical fiber communications l SDH/SONET l Metro area network • General rating Parameter Active area

Contextual Info: Devlp. PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm • General rating Parameter Active area ■ Absolute maximum ratings Parameter Forward current

Contextual Info: PHOTODIODE InGaAs APD with preamp G9910-14 ROSA type, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High gain: 15 V/mW λ=1550 nm l Differential output l Responsivity: -5 to -33 dBm l Optical return loss: 35 dB l Isolation type: Housing and signal ground are

photodiode 1.0 Gbps 1.55

Contextual Info: Devlp. PHOTODIODE InGaAs APD with preamp G10204-54 ROSA, 1.3/1.55 µm, 10.7 Gbps Features Applications l Compatible with XMD 10 Gbps Miniature Device -MSA l High-speed response: 10 Gbps l Low power supply voltage: Vcc=3.3 V, VBR=30 V l Differential output

Contextual Info: PHOTODIODE Si APD S6045 series Low temperature coefficient type APD for 800 nm band Features Applications l Low temperature coefficient: 0.4 V/˚C l High-speed response l High sensitivity, low noise l Optical fiber communications l Spatial light transmission

S6045

Abstract: S6045-01 S6045-02 S6045-03 S6045-04 S6045-05 S6045-06
Contextual Info: PHOTODIODE Si APD S6045 series Low temperature coefficient type APD for 800 nm band Features Applications l Low temperature coefficient: 0.4 V/˚C l High-speed response l High sensitivity, low noise l Optical fiber communications l Spatial light transmission

Contextual Info: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings

R6094 pmt divider circuit

Abstract: Hamamatsu r6094 C9321CA-02 R4110U-74 AUTOMATIC STREET LIGHT CONTROLLER using IR sensor InGaas PIN photodiode chip back illuminated apd raman wafer 60g H9656 sensor x-ray
Contextual Info: New CCD for Low-Light Scientific Applications High-Speed InGaAs APD + TIA ROSA Highly Sensitive Image Intensifier with Large Active Area Flat-Panel Sensor Product Line Extended The Improved Macro Imaging System AEQUORIA Imaging-Based Plate Reader FDSS for HighThroughput

1NA103

Contextual Info: PHOTODIODE Si APD S5343, S5344, S5345 Short wavelength type APD Features Applications l High sensitivity and low noise in UV to visible range l Low-light-level measurement l Analytical equipment • General ratings / Absolute maximum ratings Type No. S5343