G893 Search Results

APD OTDR

Abstract: APD photodiode 8 Ghz G893 G8931-20 InGaAs apd photodiode APD 2 Ghz 150 nA KAPDC0005JC
Contextual Info: PHOTODIODE InGaAs APD G8931-20 大受光面サイズ: φ0.2 mm高速応答: 0.9 GHz 距離計測、空間光伝送、微弱光検出などに用いられる大面積InGaAs APDです。大受光面サイズφ0.2 mmで、0.9 GHz Typ. M=10 の高速応答を実現しています。

G8931-20

Abstract: low dark current APD SE-171 G893 hamamatsu low dark current APD KAPDB0120EA hamamatsu ingaas APD
Contextual Info: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .

G8931-03

Abstract: SE-171
Contextual Info: PHOTODIODE InGaAs APD G8931-03 High-speed response: 2.5 Gbps, active area: φ0.03 mm Features Applications l 2.5 Gbps operation l Low capacitance l Optical fiber communications • General rating Parameter Active area Symbol - Value φ0.03 Unit mm Symbol IF

LH0032

Contextual Info: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).

Contextual Info: Devlp. PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm • General rating Parameter Active area ■ Absolute maximum ratings Parameter Forward current

G8930

Contextual Info: 2002. 3/7, KR1-I50008 Pigtail type InGaAs APD with preamp G8930 series FEATURES z High speed response:2.5Gbps z Typical sensitivity:-31dBm z Typical overload:-5dBm ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Reverse Voltage APD Operating Temperature

G8931-04

Abstract: LH0032 SE-171 OPTICAL NETWORK TERMINAL InGaAs apd photodiode
Contextual Info: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).

Contextual Info: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .

LH0032

Contextual Info: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).

Contextual Info: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .

G8931-20

Abstract: LH0032 SE-171 low dark current APD APD OTDR
Contextual Info: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .

Contextual Info: Devlp. PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm • General rating Parameter Active area ■ Absolute maximum ratings Parameter Forward current

G8931-04

Abstract: InGaAs apd photodiode
Contextual Info: PHOTODIODE InGaAs APD G8931-04 SONETG/GE-PONに対応した応答特性 SONET、G/GE-PONなどの幹線系光ファイバ通信に必要な2.5 Gbpsの高速応答を実現しています。 特長 用途 l 高速応答: 2.5 Gbps l 低暗電流 l 低容量

InGaAs apd photodiode

Abstract: G8931-04 Ge APD SE-171 KAPDC0005EC 1NA100 low dark current APD hamamatsu ingaas APD
Contextual Info: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON The G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET synchronous optical network , G-PON (gigabit-capable passive optical network) and GE-PON (gigabit ethernet-passive optical network).

D175

Abstract: B535 k 016 c945 p 2B51 91AB A13A C929 BD 761
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Contextual Info: 化合物光半導体 受光素子 1 InGaAs/GaAs PINフォトダイオード 1-1 1-2 特性 使い方 2 InGaAs APD 2-1 2-2 2-3 動作原理 特性 使い方 第 章 6 8 MCT HgCdTe 光起電力素子 8-1 8-2 特性 使い方 9 複合素子 10 オプション

yd4a

Abstract: D859B D175 ED-95 D-175 41D1 B5D5
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UX G5B

Abstract: D859B C929 DI 761 D13d u6 ed 91AB A13A D175 u6 ej
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C945B

Abstract: D85b FAJ 38 D175 X-D4A 1f94 12F5
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Infrared detectors

Abstract: dark detector application ,uses and working
Contextual Info: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use

C945B

Abstract: FG 99 D175
Contextual Info: 643- 97:7/?@=3 6756 <;B3= 8/?167:5 =38/C 4HDSTQHR T dcco CG9D389>7 31@129<9DI T *DB?>7 B5C9CD1>35 129<9DI D? C8?3; [ F92B1D9?> T v51FI <?14 E@ D? ejjcc-o T g;- 495<53DB93 CDB5>7D8 \25DG55> 3?9< 1>4 3?>D13DC] T y93B? CG9D38 ?> =?E>D9>7 2?1B4 1F19<12<5 T s>F9B?>=5>D1< 6B95>4<I @B?4E3D \~?v* 3?=@<91>D]

Selection guide

Contextual Info: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high

Contextual Info: セレクションガイド 2015.6 InGaAs フォトダイオード 低 ノイ ズ で 優 れ た 周 波 数 特 性 の 近 赤 外 線 検 出 素 子 InGaAs PHOTODIODE 当社独自の化合物半導体プロセス技術を生かしたInGaAsフォトダイオードは

C945B

Abstract: D175 A984
Contextual Info: 754,- :8;80@A>4 7867 =<C4> 90@278;6 >490D 5HESTQHR U o33?B49>7 D? wsq iechh`fdm,qf U *DB?>7 B5C9CD1>35 129<9DI D? C8?BD 39B3E9D 3EBB5>D 1D ficco \fc D9=5C =?B5 D81> B1D54 <?14 3EBB5>D] U deco CG9D389>7 31@129<9DI U v51FI <?14 E@ D? ffaeg;-o U g;- 495<53DB93 CDB5>7D8