HA 7610 Search Results

555 7490 7447 7 segment LED display

Abstract: SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

RSN 3306 H

Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

a44z

Abstract: ml 7603 5 HM-7602 HM-7680 HM-7680A HM-7681 HM-7681A AE 81A
Contextual Info: Ì T S ì S HARRIS HM-7680A/81A S E M IC O N D U C T O R PRODUCTS DIVISION H I G H S P E E D 1K x 8 P R O M A D IV IS IO N OF HA RR IS C ORPORATION H M -7 6 8 0 A Open Collector Outputs H M -7681A "Three S ta te ” Outputs Pinout Features • 50ns M A X IM U M ADDRESS ACCESS TIME

JR-2713-8P

Contextual Info: ALECTRON CORPORATION 935 NORTH MAIN STREET FORT WORTH, TEXAS 76106 S/N 282-7138 P/N JR2713-8P H m ¡ A L S ¿ ß o p r '~ c o ï m pftfz C0?F£p fL 0 Z P -r \ J i; v L íi/¿ O' * 'I” <r ' SHT119- n UŸZ\± Ÿ i/rtiP 2jQ— 1 . Ï vS B —50 U -f t

Contextual Info: EPSON P F802-03 E0C63B08 4-bit Single Chip Microcomputer \ • 4-bit Low Cycle / Inst. Cor CPU B u ilt-in 7 S e g m e n t T y p e L C D D riv e r • L o w V o lta g e O p e ra tio n 0 .9 V M in . • B u ilt-in G a t e A rra y • D E S C R IP T IO N

diodo 5AA

Abstract: PFBI PFB15AA80 H125 PFB15AA PFB15AA100 PFB15AA120 PFB15AA140 PFB15AA160 bidirectional thyristor module
Contextual Info: THYRISTOR M ODULE t h r e e P HASES A.C. C O N TR O L PFB15AA U L ;E 76102(M ) is a 6 chip Thyristor module which contains 3 indepen­ dent back-to-back SCR configurations. P F B 1 5A A • Easy construction by 3 phase back-to-back SCRs in one package. • High voltage 1600V

Contextual Info: HCTS574MS 3 h t" ? Radiation Hardened Octal D-Type Flip-Flop, Tri-State, Positive Edge Triggered December 1992 Pinouts Features • 20 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T20 TOP VIEW 3 Micron Radiation Hardened C M OS SOS • Total Dose 200K or 1 M ega-RAD Si

Contextual Info: rjw 16 H it P54/74FCT3651C/D— P54/74FCT3652C/D 3.3 VOLT OCTAL TRANSCEIVER/REGISTER X f- FEATURES • ESD protection exceeds 2000V ■ Function and Drive Compatible with the Fastest

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

76107d

Abstract: TC298
Contextual Info: HUF76107D3, HUF76107D3S Semiconductor Data Sheet 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: interrii HUF76105SK8 D ata S h e e t M ay 1999 5.54, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Philips capacitor 044

Abstract: Philips 2222 044 66109 capacitors philips ELECTROLYTIC capacitors marking code group philips ELECTROLYTIC capacitors RADIAL philips capacitor iec 62478
Contextual Info: Philips Components Product specification Aluminium electrolytic capacitors Radial Standard, High Voltage 044 RSH FEATURES • Polarized aluminium electrolytic capacitors, non-solid • Radial leads, cylindrical aluminium case, insulated with a blue vinyl sleeve

ic SG3524N

Abstract: 7201L32 MM1319 IR3M03A flyback cross reference equivalent regulator LM317T S81250AG IC IR3M03A S81250AG equivalent 7710YBA
Contextual Info: V0LTA6E REGULATORS CROSS REFERENCE • Series Regulator C-MOS NJRC Function 3-Tarminal Regulator E quivalent Products by O th er C om panies Type No. SII Seiko Epson Ricoh Motorola N JU 7200L10/U 10 N JU 7200L12/U 12 N JU7200L15/U 15 S-81215SG N JU7200L25/U 25

Contextual Info: HUF76107P3 Semiconductor Data Sheet February 1999 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

7201l jrc

Abstract: 7222L 7201l15 7201L 720il jrc 431l JRC 431 431l jrc 7660d l55a
Contextual Info: V0LTA9C REGULATORS CROSS REFERENCE • Series Regulator C-MOS E quivalent Products by O th er C om panies N JR C Function 3-Tarm inal R egulator T ype No. S II Seiko Epson R icoh M otorola N JU 7200L 10/U 10 N JU 7200L 12/U 12 N JU 7200L 15/U 15 S-81215SG

BCW93

Abstract: BCW93 b bcw 25 transistor BCW 93 bcw 85 transistor A 92 transistor bcw 95 transistor transistor h21e BCW92
Contextual Info: BCW 92 A, B BCW 93 A,B PNP SIL IC O N T R A N SIS T O R , E P IT A X IA L P L A N A R T R A N S IS T O R P N P S IL IC IU M , P L A N A R E P IT A X IA L - LF Amplification Amplification B F VCEO 1- 4 0 V BCW 92 t -6 0 V BCW 93 -0 ,8 A 'c 100-200 A h21E

76107d

Abstract: TC298
Contextual Info: ASSESS? HUF76107P3, HUF76107D3, HUF76107D3S 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs June 1998 Description Features m • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

AN7254

Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Contextual Info: HUF76105SK8 in t e r r ii Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative U ltraFE T process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

76105DK8

Contextual Info: HUF76105DK8 S e m ic o n d u c to r October 1998 Data Sheet • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

MC10EL16

Abstract: OP291 SPT7610 SPT7610SIQ SPT7760
Contextual Info: SPT7610 @ S P T 6-BIT, 1 GSPS FLASH A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES APPLICATIONS FEATURES Radar, EW, ECM D irect RF D ow n-C onversion M icrow ave M odem s Industrial U ltrasound T ransient C apture Test and M easurem ent 1 :2 Dem uxed ECL C om patible O utputs

76107d

Abstract: TA76107 F76107D3S F7610 dlis
Contextual Info: in te r r ii HUF76107D3, HUF76107D3S Data S heet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Th ese N -Channel power u m t$ ' M O S F E T s are m anufactured using J u ly 1999 F ile N u m b e r 4701.1 Features • Logic Level G ate Drive

Contextual Info: HUF76105DK8 Semiconductor Data Sheet October 1998 Features 5A, 30 V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: HARRIS SEMICON» SECTOR SflE D S E M I C O N D U C T O R Radiation Hardened Octal D-Type Flip-Flop, Tri-State, Positive Edge Triggered Decem ber 1992 Features • • • • • IHAS HCTS574MS nn H a r r i s • • • • • • 4302271 D Ü M M M n 3bT

la 7610

Abstract: FAN 7607 LA 7612 7629 NAN40-7615 NAN40-7610
Contextual Info: NAL40 and NAN40 SERIES Single, dual and triple output R e c o m m e n d e d fo r lo w c o s t, h ig h v o lu m e d e s ig n ins • 90VAC to 264VAC universal input range ■ NAL40 Series: VDE0871-A conducted noise ■ NAN40 Series: VDE0871-B conducted noise