HA 431 TRANSISTOR Search Results

2N3442

Abstract: E271 2n4347
Contextual Info: File Number 528.1 HA RR IS S E M I C O N D S E CT OR SbE T> 2N3442, 2N4347 4 3 0 2 2 7 1 Q Q H G 431 2 TÔ * H A S • -p High-Voltage Silicon N-P-N Transistors -3 3 - ‘3 T E R M IN A L D E S IG N A TIO N S c High-Power Devices for Applications in Industrial and Commercial Equipment

Contextual Info: 32E V m A23b320 PNP Silicon High-Voltage Transistor Q O lb ö S S 3 « S IP BFN 21 SIEMENS/ SPCLi SEMICONDS T- 21-0,3 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage

bf451

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bb53^31 D0E7bT4 STS H A P X J j BF450 BF451 V HF SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in a plastic envelope intended for HF and IF applications in radio receivers, especially for mixer stages in AM receivers and IF stages in AM/FM receivers with negative earth.

f 0472 N-Channel MOSFET

Abstract: hrf3205 mosfet HRF3205
Contextual Info: HRF3205, HRF3205S in te ik il J u n e 1999 Data S h e e t 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

tfk 434

Abstract: A1431 BSX45
Contextual Info: BSX 45 • BSX 46 Silizium-NPN-Epitaxial-Planar-Schalttransistoren Silicon NPN Epitaxial Pianar Switching Transistors Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and switches Besondere Merkmale: • Verlustleistung 5 W • In G ruppen s o rtie rt

BUZ41A

Contextual Info: SILICONIX INC 1ÖE » • Ô2S473S O G m b Q T Ö BUZ41A fsr Siliconix in c o r p o r a t e d N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW ~Ô~ PRODUCT SUMMARY V BR|DSS 'W 500 1.5 •d (A 4.5 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

BD618

Abstract: BD 202 transistors
Contextual Info: 5SC D • 623Sb QS Q 0Q 4 3 Ö 3 T H S I E 6 PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 7 04383 D BD612 BD 614 BD616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

29Z3

Abstract: Transistor CODE FR m7am
Contextual Info: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided

Contextual Info: HRF3205, HRF3205S Semiconductor June 1999 Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

2n1833

Abstract: 2N720 n719 2N1890 2n871 2N698 2N719 2N1889 2N639
Contextual Info: TYPES 2N698, 2N639. 2N719, 2N719A, 2N720, 2N720A. 7.nm 2N871, 2N1889, 2N1890, 2N1893 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 3 4 4 2 , M A Y 1 9 6 3 - R E V I S E D M A R C H 1 9 7 3 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

MIC5801CN

Abstract: lrr3 5962-8764001WX 59628764001wx MIC5800BN Uni-polar stepper motor
Contextual Info: b o a a a n oc m oa G ô tüg h u r l MIC5800/5801 4/8 Bit Parallel-Input Latched Driver Family General Description Features The MIC5800/5801 latched drivers are high-voltage, highcurrent integrated circuits comprised of four or eight CMOS data latches, a bipolar Darlington transistor driver for each

tl496cp

Contextual Info: TL496C, TL496Y 9-V POWER-SUPPLY CONTROLLERS SLVS012B - AUG UST 1978 - REVISED AUG US D OR P PACKAGE TOP VIEW • Internal Step-Up Switching Regulator • Fixed 9-V Output FEEDBACK[ 1

Contextual Info: CDP1852/3, CDP1852C/3 HARRIS S E M I C O N D U C T O R High-Reliability Byte-Wide Input/Output Port March 1997 Features Description • Static Silicon-Gate CMOS Circuitry The CDP1852/3 and CDP1852C/3 are parallel, 8-bit, modeprogrammable input/output ports. They are compatible and

Contextual Info: flP3Sb05 o o a i s b 2 m a • ■ SIEMENS PROFET BTS 542 E2 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection Vbb AZ Operating voltage On-state resistance Load current (ISO) Vbb(on) /L(ISO) 18 m n

Contextual Info: TA8428K 1.5A FuLL b r id g e d r i v e r . Unit in Iran TA8428K is Full Bridge Driver IC for Brush Motor Rotation Control that has current capability of up to 1.5A AVE . Thermal Shutdown and Short Current Protector are provided. . 1.5A MAX (AVE) Full Bridge Driver

LSD 431 TO-92

Contextual Info: A VN2220 VN2222 VN2224 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package R d S ON I d (ON) (max) (min) TO-39 TO-92 20-Pin C-Dip D ice1 200V 1.25Q 5.0A VN2220N2 VN2220N3 - VN2220ND 220V 1.25Î2 5.0A

TL496

Contextual Info: TL496C, TL496Y 9-V POWER-SUPPLY CONTROLLERS _ SLVS012B-AUGUST 1 9 7 6 - REVISED AUGUST 1995 D OR P PACKAGE TOP VIEW • Internal Step-Up Switching Regulator • Fixed 9-V Output • Charges Battery Source During

Contextual Info: / T T ^ 7/ S G S - T H O M S O N IM a M llL iC T W O Ig i_ T E A 3 7 1 7 STEPPER MOTOR DRIVER . HALF-STEP AND FULL-STEP MODE . BIPOLAR DRIVE OF STEPPER MOTOR FOR MAXIMUM MOTOR PERFORMANCE • BUILT-IN PROTECTION DIODES ■ WIDE RANGE OF CURRENT CONTROL 5 TO

Contextual Info: Provisional Data Sheet No. PD - 9.1564B International l R Rectifier dv/dt R A TE D HEXFET TRANSISTOR IRHM7064 IRHM8064 REPETITIVE A V A L A N C H E AND N -C H A N N E L MEGA RAD HARD 60Volt, 0.021 il, MEGA RAD HARD HEXFET International R ectifie r’s RAD HARD technology

Contextual Info: HI1386 HARRIS S E M I C O N D U C T O R 8-Bit, 75 MSPS, Flash A/D Converter August 1997 Description Features The HI1386 is an 8-bit, high-speed flash analog-to-digital converter IC capable of digitizing analog signals at a maximum rate of 75 MSPS. The digital I/O levels of this A/D

Transistor NEC 12d

Abstract: IN4007GP
Contextual Info: Ver. 3.0 POWER FACTOR CORRECTION KA7525/B/26 The KA7525/B/26 provides simple, yet high perfor­ m ance active pow er factor correction. KA7525/B/26 is optim ized for electronic ballast and low power, high d en ­ sity pow er supplies requiring a m inim um board area,

Contextual Info: HA16811ANT/H A16811 AMP SLIC IC for PBX Applications Bipolar linear process monolithic SLIC IC for PBX applications »in Arrangement HA16811ANT Features • • • • • • • Basic Functions: Internal battery feed control B , loop supervi­ sion (S) and 2 W-4 W conversion