HA 431 TRANSISTOR Search Results

2N3442

Abstract: E271 2n4347
Contextual Info: File Number 528.1 HA RR IS S E M I C O N D S E CT OR SbE T> 2N3442, 2N4347 4 3 0 2 2 7 1 Q Q H G 431 2 TÔ * H A S • -p High-Voltage Silicon N-P-N Transistors -3 3 - ‘3 T E R M IN A L D E S IG N A TIO N S c High-Power Devices for Applications in Industrial and Commercial Equipment

Contextual Info: 32E V m A23b320 PNP Silicon High-Voltage Transistor Q O lb ö S S 3 « S IP BFN 21 SIEMENS/ SPCLi SEMICONDS T- 21-0,3 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage

ha 431 transistor

Abstract: 2SD2396 2SD 431 TRANSISTOR a 431 transistor n 431 transistor transistor 431 N
Contextual Info: 2SD2396 Transistor, NPN Features Dimensions Units : mm • available in TO-220FN package • high dc current gain (hFE), typically hFE =1000 • low collector saturation voltage, typically VCE(sat) = 0.3 V at lc /lB = 2 A/ 0.05 A 2SD2396 (TO-22QFN) ¿ 3 .2 ±0.2

Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURREI HIGH PERFORMANCE TRANSISTORS I I ISSUE 2 - OCTOBER 1995_ FEATURES * * * * FZT851 FZT853 Extremely low equ ¡valent on-resistance; RcEtnt| 44mQ at 5A 6 Amps continuous current, up to 20 Amps peak current

d947

Abstract: d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951
Contextual Info: 5SC D • 023SbOS 3004303 T MSIE<S PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 'T~ 3 04383 7 D BD 612 BD 614 BD 616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 6 2 0 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA " I . \ W Green " . I. TM L i n e MGSF1P02LT1 Motorola Preferred Device Low rDS on) Sm all-Signal RMOSFETs TMOS Single P-Channel Field Effect Transistors

bf451

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bb53^31 D0E7bT4 STS H A P X J j BF450 BF451 V HF SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in a plastic envelope intended for HF and IF applications in radio receivers, especially for mixer stages in AM receivers and IF stages in AM/FM receivers with negative earth.

ha 431 transistor

Abstract: BSP122 UBB073 transistor 431 N
Contextual Info: ^53^31 Philips Semiconductors Q023ñ30 APX bflñ Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N ANER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching

Contextual Info: D73F5T1, D73F5T2 File Number 2367 HARRIS SErilCOND SECTOR SbE D 43D2271 G04DflbE STS T -3 7 -/S 5-Ampere Silicon P-N-P Power Transistors TERMINAL DESIGNATION Features: • Low I / c e sat ■ Fast switching speed m Complementary to D72F5T1,2 The D73F5T1 and D73F5T2 silicon p-n-p power transistors

SILICON TRANSISTOR CORP

Abstract: h a 431 transistor
Contextual Info: SILICON TRANSISTOR CORP SbE J • 8 as „ü52 0 0 D 0 , „ 01Q M S T C SILICON TRANSISTOR CORPORATION { Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 fax: 508-250-1046 . A POWERHOUSE 400 Volts 0.4 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS

f585

Abstract: bfn21 62702-F585 transistor sl 431
Contextual Info: PNP Silicon High-Voltage Transistor • • • • • BFN 21 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-em itter saturation voltage Low capacitance Complementary type: BFN 20 NPN Type Marking

ha 431 transistor

Abstract: BRY39 BRY39 circuit BRY39 application data MSB028 philips bry39 Programmable Unijunction Transistor BRY3 27B2S transistor ag
Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> bhSaTai DD27Ô2S RflT Philips S em iconductors Data sheet status Preliminary specification date ol Issue December 1990 Programmable unijunction transistor QUICK REFERENCE DATA DESCRIPTION A planar pnpn trigger device in a TO-72 metal envelope, intended for

f 0472 N-Channel MOSFET

Abstract: hrf3205 mosfet HRF3205
Contextual Info: HRF3205, HRF3205S in te ik il J u n e 1999 Data S h e e t 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

tfk 434

Abstract: A1431 BSX45
Contextual Info: BSX 45 • BSX 46 Silizium-NPN-Epitaxial-Planar-Schalttransistoren Silicon NPN Epitaxial Pianar Switching Transistors Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and switches Besondere Merkmale: • Verlustleistung 5 W • In G ruppen s o rtie rt

ha 431 transistor

Abstract: PZTA44 PZTA45
Contextual Info: q. „ , „ . • Philips Semiconductors bbSB'lBl 00EL017 bbT H A P X N AMER PHILIPS/DISCRETE NPN high voltage transistor FEATURES Product apBrtflratlnr. b7E D — — PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION High voltage NPN transistor in a

Contextual Info: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type ^DS ¡0 11DS on BUZ 78 800 V 1.5 A 9.0 £2 Maxim um Ratings Parameter Continuous drain current, Tc = 25 'C Pulsed drain current, Tc = 25 °C Avalanche current, limited by Timax

sd 431 transistor

Contextual Info: S IE M E N S SIPMOS Small-Signal Transistor BSS 91 VDS = 240 V /D = 0.35 A ^DS on = 6-0 A • N channel • Enhancem ent mode • Package: T O -1 8 ') Type Ordering code for version in bulk BSS 91 Q 62702 -S 45 7 Maximum Ratings Parameter Symbol Values

BD618

Abstract: BD 202 transistors
Contextual Info: 5SC D • 623Sb QS Q 0Q 4 3 Ö 3 T H S I E 6 PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 7 04383 D BD612 BD 614 BD616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically

BUK627-400A

Abstract: BUK627-400B ha 431 transistor transistor 431 N
Contextual Info: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

BUK445-100A

Abstract: BUK445-100B 100-P BUK445 PQ25-C
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE ]> • 1^53^31 DD3DSSS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

29Z3

Abstract: Transistor CODE FR m7am
Contextual Info: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided

BUK482-100A

Abstract: transistor 431 N FR4 epoxy
Contextual Info: N AUER P H I L I P S / D I S C R E T E b'lE » • bbSB'IBl 0030733 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in