HA 131 50A Search Results

TRS2-25-1

Abstract: TA49018
Contextual Info: RFG50N06 RFP50N06 fü HARRIS U U S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Package Features JEDEC T0-220AB TOP VIEW • 5 0 A ,60V • r DS(ON) = 0.022Q DRAIN (FLANGE) • Temperature Compensating PSPICE Model

Contextual Info: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

BUK452-50A

Abstract: BUK452-50B T0220AB
Contextual Info: N AMER PHI LIP S/ DI SCRETE btS3*131 002DM3Ü 4 2SE D BUK452-50A BUK452-50B PowerMOS transistor T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK445

Abstract: SO-020 417K BUK445-50A BUK445-50B
Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D • bbSBiai 00SD3aS 3 ■ PowerMOS transistor BUK445-50A BUK445-50B T -3 7 -0 ? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BYW80

Abstract: T0220AC T0220-AC BYW80-200 BYW80F-200 ISOWATT220AC T0-220AC
Contextual Info: SG S -TH O M SO N BYW80 F M HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC): Insulating voltage = 2000 V DC

TLE4957C

Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
Contextual Info: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!

CD4049 PIN DIAGRAM

Abstract: CD4049 amplifier IRML2402 HA 131 50A CD4049 equivalent CD4049 PIN DIAGRAM Circuit cd4049 radar position control servo motor UC1625 application 12 Vdc brush motor driver
Contextual Info: 75A, 600V MAGNUM MOTOR DRIVES SLEEP MODE FEATURES POWER SUPPLY I S O L A T I O N VCC • 600 Vdc Drive for 270 Vdc Motors VCC RTN • 75 Amps @25°C, 50 Amps @85°C UPPER • Operates with Brushless, Brush and Induction Motors SC FAULT DISABLE/RESET • Input to Output Ground Isolation with

ltsq

Abstract: P6KE6.8 THRU P6KE440CA P6KE200 602 P6KE15 equivalent
Contextual Info: P6KE6.8 thru P6KE440CA - / X G en era l ^ S e m ic o n d u c to r _ TRANsZoRB Transient Voltage Suppressors Peak Pulse Power 600W Breakdown Voltage 6.8 to 440V Features_ D0-204AC DO-15 • Plastic package has Underwriters Laboratory

B30C300

Abstract: 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

HDR-10P-1R-SMD

Abstract: pm965 ICH8M 54C3 TP81-1 LE88CLPM samsung kbc 37 TV samsung lcd Schematic circuit diagram SLB9635TT1.2 54B4 TP1230
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D LISBON C B DRAW Ma Xinzhi : : : : : : Lisbon-P55

Z1075A

Abstract: Z1016A Z1015A Z1020A z1033a Z1051A Z1051 z1033 z2062 Z1030A
Contextual Info: Data Sheet No. C-600 ÜEKH28E CKE Zener Avalanche Protector Transient Voltage Suppressors D escription/Features T R A N Z A P ’s are silico n PN ju n c tio n d iod es de sig ned , m a n u fa ctu re d and sp e cifie d a s T ransien t V oltage S up pre ssors having a n o n -lin e a r cu rre n t-v o lta g e c h a ra c ­

KC156A

Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
Contextual Info: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:

Q1 BC 558 transistor

Abstract: PW-85075P6 hca 9001
Contextual Info: Make sure the next Card you purchase has. PW-8X010P6, PW-8X030P6, PW-8X075P6 MAGNUM MOTOR DRIVE SERIES 75A, 30A, 10A 600V MAGNUM MOTOR DRIVES FEATURES • 600 VDC Drive for 270 VDC Motors • 10 Amps @25°C, 10 Amps @85°C • 30 Amps @25°C, 30 Amps @85°C

32F8144

Contextual Info: SSI 32F8144 ¿ w m Programmable Electronic Filter s u s k n ts A TDK Group/Company January 1994 DESCRIPTION FEATURES This custom integrated circuit incorporates a pulse equalizer of variable equalization and variable band­ width with a transfer function of a 2 zero/7 pole linear

2T908A

Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,

d449c

Abstract: 32 inch TV samsung lcd Schematic stm diode C818 B511 N1 CK505M LE88CLPM SI2315BDS-T1 NH82801 Q527 samsung lcd tv power supply schematic
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D OSLO C B Sheet 1. Sheet 2-7. Sheet 8. Sheet 9.

TB03100M

Abstract: TRIPLE ZENER DIODE ARRAY Dual N-Channel mosfet sot-363 Dual P-Channel mosfet sot-363 thyristor tt 330 n16 DMMT847B sot26 sot363 transistor ALL4150 sot-363 MARKING n10 diode marking code LY sot-353
Contextual Info: Product Catalog 2002/2003 Click to go to: - Table of Contents - New Products List - Index Click: part numbers > data sheets Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2002/2003 Specifications are subject to change without notice.

U252

Abstract: BA41-00727A SMM 112 samsung 20D2G 11070 LE88CLGM SI2315BDS-T1 power supply SAMSUNG MONITOR str HED55XXU12 mx25l8005m2c-15g
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 CPU :INTEL MEROM Chip Set :INTEL 965GM & ICH8-M

BA41-00727A

Abstract: LE88CLGM samsung u252 SMM 112 samsung U252 T2MP Socket AM2 A3212ELH reso r686 ICH7M
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 B COVER OPERATION BLOCK DIAGRAM

MTI BA relay

Abstract: FIE24 BAA 9K RE55 RTXP 18 depth 010-DA RXEEC ABB IRT 1250 926100
Contextual Info: Infci-’Np, INFORM ATION J i m_ _ » M FnSrti/DAti I M I PP R F R , Nov. 19S1 Edition 1 ASEA DFIOWtl K iVVERI ERI RK 667-300 E Fte&, Page 7U23 1 ABB Refays Neutral point voltage relay, type R A EU B o Used as earth convertors fault relay in systems which

NTE5405

Abstract: GT 32 DIAC
Contextual Info: N T E ELECTRON ICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (All Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate

MTP50N05EL

Abstract: MTP50N05E N50O
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Logic Level T M O S L 2 T M O S E-FET P o w er Field E ffe c t Tran sistor IM-Channel Enhancement-Mode Silicon Gate MTP50N05EL TM O S POWER FET LOGIC LEVEL 50 AMPERES T h is a d v a n c e d L ^ T M O S E-FET ¡s a p o w e r M O S F E T d e s ig n e d to

HYM7V64801TFG1

Contextual Info: - H Y U N D A I V . • 8MX64 BIT SDRAM UNBUFFERED DIMM F1-SERIES i' M✓ based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/SK-Refresh HYM7V64800/ HYM7V64801/ HYM7V64830/ HYM7V64831 DESCRIPTION The HYM7V64800/ 64801/ 64830/ 64831 F1 -Series are high speed 3.3-Volt synchronous dynamic RAM

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES