H9Y SE Search Results

DIODE H5X

Abstract: diode zd 33 DIODE H5y diode zd 12
Contextual Info: E v ie n e Y I2 J 2 E : - V M 3 1 2 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • The VM312 is a1high-perform ance, low-power, bipolar mono­ lithic read / write pream plifier designed for use with twoterminal thin-film recording heads. It provides write current

Contextual Info: SSI 32R2028R ¿¡lim systems' 5V, 10-Channel Thin-Film Read/Write Device A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2028R is a bipolar monolithic integrated circuits designed for use with two-terminal recording heads. It provides a low noise read amplifier, write

Contextual Info: SSI 32R2010R 10-Channel Thin Film Read/Write Device m cm M Îm s A dvance Inform ation July, 1990 FEATURES DESCRIPTION The SSI 32R2010R is an integrated read/write circuit designed for use with non-center tapped thin film heads in disk drive systems. Each chip controls ten

diode zd 33

Abstract: yy12
Contextual Info: #| v v tc .„ c Value the Customer V M 333 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 1.1 nV/VHz maximum - Input capacitance = 20pF maximum

H13Y

Abstract: HD12X
Contextual Info: ^ VTC1nc y jr jE S ; . V M 313H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • High Performance: - Read mode gain = 250V/V - Low input noise = 0.8nV/VRz maxim um

h9y se

Contextual Info: SSI 32R2100R/2101R/2102R 10 Channel Thin Film Read/Write Devices October 1995 FEATURES The SSI 32R2100R/2101R/2102R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high performance write driver,

H13Y

Contextual Info: SSI 32R5281R c w m M fc m A TDK Group/Company 14-Channel Two-Terminal Read/Write Device s Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5281R Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

H13Y

Contextual Info: V M 5200 10,14 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • High Performance - Rise/Fall Times = 6.5 ns Typical into 1 |iH Head - Input Capacitance = 15 pF Typical - Input Noise = 0.52 nV/VHi Typical - Head Inductance Range = 0 .2 -1 .5 |iH

VM312

Abstract: DIODE H5y VM312-8PMJ VM3128
Contextual Info: V T C In c. V a lu e th e C u s to m e r VM312 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 TWO-TERMINAL READ/WRITE PR E A M PS FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nVA/Hz maximum

Contextual Info: SSI 32R5161R 1 Swmswfcms 10-Channel Ferrite/MIG Read/Write Device A TDK Group/Company September 1992 DESCRIPTION FEATURES The SSI 32R5161R is a bipolar monolithic integrated circuit designed for use with a center-tapped ferrite or MIG recording heads. The SSI 32R5161R offers the

400284

Abstract: 3104d 32R2100RU IW671
Contextual Info: m m M b n s S S I 3 2 R 2 1 O O R /210 1 R 10 Channel Thin Film Read/Write Devices ' A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES 5V ±10%, 12V ±10% supply The SSI 32R2100R/2101R are BiCMOS monolithic integrated circuits designed for use with two-terminal

32R2102R

Abstract: 32r2100ru10
Contextual Info: SSI 32R2100R/2101R/2102R m m 10 Channel Thin Film Read/Write Devices s u s b n s A TDK Group/Company October 1995 DESCRIPTION FEATURES The SSI 32R2100R/2101R/2102R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low

Contextual Info: SSI 32R2010R wmsuskms 10-Channel Thin Film Read/Write Device A TDK Group/Company Preliminary Data January 1993 FEATURES DESCRIPTION The SSI 32R2010R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains up to ten channels of

Contextual Info: w m sitsfm SSI 32R2028R 5V, 10-Channel Thin-Film Read/Write Device • A TDK Group/Company Advance Information December 1993 DESCRIPTION FEATURES The SSI 32R2028R is a bipolar monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write

32R2020R

Contextual Info: SSI 32R2020R/2021R cmmsusbtis 5V, 2, 4, 6 , 10-Channel Thin-Film Read/Write Device A TDK Group/Company January 1993 DESCRIPTION FEATURES The SSI 32R2020R/2021R are bipolar monolithic inte­ grated circuits designed for use with two-terminal re­ cording heads. They provide a low noise read ampli­

32R2010R

Abstract: 32R2010R-CM
Contextual Info: SSI 32R2010R ¿monsystems 10-Channel Thin Film Read/Write Device A TDK GroupICompany December 1993 DESCRIPTION FEATURES The SSI 32R2010R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains up to ten channels of

32R2020R

Abstract: 32R2020R-4CL 32R2020 32R2020R-4CV 32R2021R-4CV 32R2020R-6CV 32R2020R4CV
Contextual Info: SSI 32R2020R/2021R ¿mmsitskms 5V, 2, 4, 6 , 10-Channel Thin-Film Read/Write Device A TDK G ro u p /c o m p a n y' January 1993 DESCRIPTION FEATURES The SSI 32R2020R/2021R are bipolar monolithic inte­ grated circuits designed for use with two-terminal re­

Contextual Info: SSI 32R2100R/2101R/2102R M M M k m 10 Channel Thin Film Read/Write Devices s A TDK Group /Company October 1995 DESCRIPTION FEATURES The SSI 32R2100R/2101R/2102R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low

sol 44

Abstract: H13Y
Contextual Info: SSI 32R5121/5121R m m M k n 14-Channel Thin Film Read/Write Device t s Advance Information July, 1990 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­ polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They

1HS1

Contextual Info: VM7800 A V T C In c. Value the C u sto m e rr* 4, 6, OR 10-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER WITH MULTIPLE SERVO WRITE CAPABILITY August, 1995 DESCRIPTIO N The VM7800 is a high-performance read/write preamplifier designed for use in high-end disk drives. It provides write cur­

H13Y

Abstract: 5121R H13V
Contextual Info: SSI 32R5121/5121R M e m s y s te m 14-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­ polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro­

32R201

Abstract: DDD1421
Contextual Info: SSI 32R2011R mmsvskms 10-Channel Thin Film Read/Write Device A TDK Group/Company Advance Information December 1993 DESCRIPTION FEATURES The SSI 32R2011R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains up to ten channels of

Contextual Info: r a * 8 VM5200 í % A-A# V T C In c . l/a/ue ífte Cusióme/- 10,14 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August,1997 FEATU R ES • High Performance - Rise/Fall Times = 6.5 ns Typical into 1 nH Head - Input Capacitance = 15 pF Typical

sol 44

Abstract: H11Y
Contextual Info: SI L I C O N SYSTEMS INC hlE D • 8 2 5 3 ^ 5 00Qb477 MSI I I S I L SSI 32R5121/5121R ¿ 14-Channel Thin Film Read/Write Device ilic m á y s b n s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­