H13Y Search Results

H0Y-H13Y

Abstract: H13V
Contextual Info: SSI 32R5281AR M m M lm 14-Channel Two-Terminal Read/Write Device A TDK Group/Company Advance Information July 1992 DESCRIPTION FEATURES The SSI 32R5281AR Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

Contextual Info: SSI 32R5281R M M M k m 14-Channel Two-Terminal Read/Write Device s A TDK G rou p /C om pany Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5281R Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

H14Y

Abstract: VM31316
Contextual Info: m a VTC Inc. Value the Customer VM31316 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES July, 1993 CONNECTION DIAGRAM • High Performance: - Read mode gain = 150 V/V - Low input noise = 0.8nVA/Hz maximum - Input capacitance = 25 pF maximum

Contextual Info: vC^VTCInc YJEc— » VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER _ July, 1993 FE A T U R E S TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • High Performance:

Contextual Info: SSI 32R5121/5121R Mmsifskms' 14-Channel Thin Film Read/Write Device A TDK G roup/C om pa ny Advance Information November 1991 FEATURES DESCRIPTION The SSI 32R5121/5121R Read/Write devices are bi­ polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro­

HD13X

Abstract: MAX4727 HD10X
Contextual Info: VM 312H August, 1995 FEATURES • • • • • • • • • CO N N EC TIO N DIAGRAM S High Performance: - Read Mode Gain = 250 V/V - Low Input Noise = 0.8nV/VFiz Maximum - Input C apacitance = 25 pF Maximum - W rite C urrent Range = 10 mA to 40 mA - Head Inductance Range = 200 nH to 5 ^iH

VM VTC

Contextual Info: VM31216 Value the Customerm 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • • • • • • • • • High Performance: - Read Mode Gain = 150 V/V - Low Input Noise = 0.85nV/VHz Maximum - Input C apacitance = 25 pF Maximum

sol 44

Abstract: H11Y
Contextual Info: SI L I C O N SYSTEMS INC hlE D • 8 2 5 3 ^ 5 00Qb477 MSI I I S I L SSI 32R5121/5121R ¿ 14-Channel Thin Film Read/Write Device ilic m á y s b n s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­

sol 44

Abstract: H13Y
Contextual Info: SSI 32R5121/5121R m m M k n 14-Channel Thin Film Read/Write Device t s Advance Information July, 1990 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­ polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They

H12Y

Abstract: H11X H11Y H14Y H10Y 20-channel
Contextual Info: SSI 32R2112R 20-Channel Thin Film Read/Write Device October 1995 FEATURES The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high performance write driver, write current control, and

H13Y

Abstract: HD12X
Contextual Info: ^ VTC1nc y jr jE S ; . V M 313H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • High Performance: - Read mode gain = 250V/V - Low input noise = 0.8nV/VRz maxim um

Contextual Info: m # * t c , „ c ~ VM313H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 FEATURES DESCRIPTION The VM313H is a high-performance, low-power, high gain, bi­ polar monolithic read / write preamplifier designed for use with two-terminal thin-film recording heads. It provides write current

Contextual Info: ♦T* VM 312H W 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER Ju ly , 1992 FEATURES DESCRIPTION The VM312H is a high-performance, low-power, high-gain, bipolar monolithic read / write preamplifier designed for use with two-terminal thin-film recording heads. It provides write

Contextual Info: y y V T C In c. Value the Custom er VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY F E A TU R ES CONNECTION DIAGRAMS • High Performance: - Read mode gain = 250V/V CZ] CZ m| CZ H 13X H 13Y HOX HOY H1X nz H1Y n

H13Y

Contextual Info: SSI 32R5281R c w m M fc m A TDK Group/Company 14-Channel Two-Terminal Read/Write Device s Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5281R Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

6914

Abstract: H21Y
Contextual Info: SS! 32R2110R/2111R mmsvskms 10-Channel Two Terminal Thin-Film Read/Write Device A TDK Group/Company Advance Information January 1994 DESCRIPTION FEATURES The SSI 32R2110R/2111R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. It is intended for use in hard disk drive

H13Y

Contextual Info: V M 5200 10,14 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • High Performance - Rise/Fall Times = 6.5 ns Typical into 1 |iH Head - Input Capacitance = 15 pF Typical - Input Noise = 0.52 nV/VHi Typical - Head Inductance Range = 0 .2 -1 .5 |iH

Contextual Info: November 1990 PRELIMINARY rtfe, ML4415, ML4415R ML4416, ML4416R . Micro Linear 15 Channel Read/Write Circuit GENERAL DESCRIPTION FEATURES The ML4415, ML4416 devices are bipolar monolithic read/write circuits designed for use with fixed disk ferrite center-tapped recording heads. They provide a

32R2015R

Contextual Info: SSI 32R2015R ¿ ik m s if s k m 16-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2015R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains sixteen channels ot read

1m6y

Contextual Info: SS! 32R211 OR/2111R ¿ilimsitskns 10-Channel Two Terminal Thin-Film Read/Write Device A TDK Group/Company Advance Information January 1994 DESCRIPTION FEATURES The SSI 32R211 OR/2111R is a BiCMOS monolithic integrated circuit designed for use with two-terminal

H13Y

Abstract: 5121R H13V
Contextual Info: SSI 32R5121/5121R M e m s y s te m 14-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­ polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro­

H12Y

Contextual Info: SSI 32R2040 ¿ilmisifskms 14-Channel Two-Terminal Read/Write Device A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2040 Read/Write device is a bipolar monolithic integrated circuit designed tor use with twoterminal thin-film recording heads. It provides a low

Contextual Info: S S I 32R5281AR mmsysbns 14-Channel Two-Terminal Read/Write Device A TDK Group/Company Advance Information July 1992 DESCRIPTION FEATURES The S S I 32R5281AR Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

Contextual Info: W ^ VValue T the C Customer -In c v VM31316 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER ADVANCE INFORMATION FEATURES July, 1992 C O N NECTIO N D IA G R A M TWO-TERMINAL READ/WRITE PREAMPS • High Performance: - Read mode gain = 150V/V_