H14Y Search Results

H14Y

Abstract: VM31316
Contextual Info: m a VTC Inc. Value the Customer VM31316 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES July, 1993 CONNECTION DIAGRAM • High Performance: - Read mode gain = 150 V/V - Low input noise = 0.8nVA/Hz maximum - Input capacitance = 25 pF maximum

H14Y

Contextual Info: VM5200M VTC Inc. Value the C ustom er 10 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY DESCRIPTION The VM5200M is a high-performance, integrated read/write preamplifier designed for use with two-terminal, thin-film record­

VM VTC

Contextual Info: VM31216 Value the Customerm 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • • • • • • • • • High Performance: - Read Mode Gain = 150 V/V - Low Input Noise = 0.85nV/VHz Maximum - Input C apacitance = 25 pF Maximum

H12Y

Abstract: H11X H11Y H14Y H10Y 20-channel
Contextual Info: SSI 32R2112R 20-Channel Thin Film Read/Write Device October 1995 FEATURES The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high performance write driver, write current control, and

Contextual Info: SSI 32R2015R ¿immsiiskms 16-Channel Thin Film Read/Write Device A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2015R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains sixteen channels of read

MAX232

Abstract: H14Y
Contextual Info: VM782020 V W Y J £ |2 £ - 20-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 FEATURES • High Performance - Read Gain = 200 V/V Typical - Input Noise = 0.55nV/VFiz Typical - Head Inductance Range = 0 . 2 - 5 |o.H 0.5 nH Typical - IW Rise/Fall Times = 9 ns (LH = 1 (j.H, lw = 20 mA b-p)

32R2015R

Contextual Info: SSI 32R2015R ¿ ik m s if s k m 16-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2015R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains sixteen channels ot read

Contextual Info: W ^ VValue T the C Customer -In c v VM31316 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER ADVANCE INFORMATION FEATURES July, 1992 C O N NECTIO N D IA G R A M TWO-TERMINAL READ/WRITE PREAMPS • High Performance: - Read mode gain = 150V/V_

philips ecg master replacement guide

Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
Contextual Info: STORAGE PRODUCTS REFERENCE GUIDE Market Number Channels Flip Flop Input Type Noise nV/Hz Write Current, mA Input Cap, pF Servo Enable Voltage Gain Damp Resistor Bandwidth MHz, Min. Package Min. Head Swing Vp-p R 5 & 12 Volt Thin Film Read/Write Preamps Rise time 7 ns, Head Swing 11 Vp-p, Power 235 mW

H14Y

Contextual Info: SSI 32R2112R m m M k m 20-Channel Thin Film Read/Write Device s ' A TDK Group/Company October 1995 DESCRIPTION FEATURES 5V ± 10%, 12V ± 10% supply The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high

H16Y

Contextual Info: m S S I3 2 R 2 1 1 2 R 20-Channel Thin Film Read/Write Device m s u s b n s * A TDK Group/Company October 1995 DESCRIPTION FEATURES The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high

H21Y

Abstract: HD14X HD14Y
Contextual Info: ê* é VM 313H24 VTC In c . W 24-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 FEATU R ES CONNECTION DIAGRAM • High Performance: - Read Mode Gain = 250V/V - Low Input Noise = 0.8nV/VHz Maximum - Input Capacitance = 25pF Maximum