H16Y Search Results

H14Y

Contextual Info: VM5200M VTC Inc. Value the C ustom er 10 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY DESCRIPTION The VM5200M is a high-performance, integrated read/write preamplifier designed for use with two-terminal, thin-film record­

H12Y

Abstract: H11X H11Y H14Y H10Y 20-channel
Contextual Info: SSI 32R2112R 20-Channel Thin Film Read/Write Device October 1995 FEATURES The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high performance write driver, write current control, and

Contextual Info: w VM782020 U I£ J U S » 20-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • « r N « rr O O > -X > -) < > - X > -X 6463626160595857565554535251S049 N H14X Hu y H15X H15Y | i i i 3 H5Y 3 H5X 3 H4Y 3 H4X 3 H3Y 3 H3X 3 H2Y

6914

Abstract: H21Y
Contextual Info: SS! 32R2110R/2111R mmsvskms 10-Channel Two Terminal Thin-Film Read/Write Device A TDK Group/Company Advance Information January 1994 DESCRIPTION FEATURES The SSI 32R2110R/2111R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. It is intended for use in hard disk drive

MAX232

Abstract: H14Y
Contextual Info: VM782020 V W Y J £ |2 £ - 20-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 FEATURES • High Performance - Read Gain = 200 V/V Typical - Input Noise = 0.55nV/VFiz Typical - Head Inductance Range = 0 . 2 - 5 |o.H 0.5 nH Typical - IW Rise/Fall Times = 9 ns (LH = 1 (j.H, lw = 20 mA b-p)

1m6y

Contextual Info: SS! 32R211 OR/2111R ¿ilimsitskns 10-Channel Two Terminal Thin-Film Read/Write Device A TDK Group/Company Advance Information January 1994 DESCRIPTION FEATURES The SSI 32R211 OR/2111R is a BiCMOS monolithic integrated circuit designed for use with two-terminal

H22Y

Contextual Info: SSI 32R2110R/2111 R c s ilm M k m 24-Channel Thin Film Read/Write Devices s A TDK Group/Company Target Specification January 1995 DESCRIPTION FEATURES The SSI 32R2110R/2111R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low noise read

philips ecg master replacement guide

Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
Contextual Info: STORAGE PRODUCTS REFERENCE GUIDE Market Number Channels Flip Flop Input Type Noise nV/Hz Write Current, mA Input Cap, pF Servo Enable Voltage Gain Damp Resistor Bandwidth MHz, Min. Package Min. Head Swing Vp-p R 5 & 12 Volt Thin Film Read/Write Preamps Rise time 7 ns, Head Swing 11 Vp-p, Power 235 mW

H14Y

Contextual Info: SSI 32R2112R m m M k m 20-Channel Thin Film Read/Write Device s ' A TDK Group/Company October 1995 DESCRIPTION FEATURES 5V ± 10%, 12V ± 10% supply The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high

H16Y

Contextual Info: m S S I3 2 R 2 1 1 2 R 20-Channel Thin Film Read/Write Device m s u s b n s * A TDK Group/Company October 1995 DESCRIPTION FEATURES The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high

H21Y

Contextual Info: mmMbtis SSI 32R2110R/2111 R 10-Channel Two Terminal Thin-Film Read/Write Device * A TDK Group/Company Advance Information January 1994 DESCRIPTION FEATURES The SSI 32R211 OR/2111R is a BiCMOS monolithic integrated circuit designed for use with two-terminal

silicon systems

Contextual Info: SSI 32R211 OR/2111R ¿ ib m s v s k m A TDK Group/Company 24-Channel Thin Film Read/Write Devices s Target Specification January 1995 DESCRIPTION FEATURES The SSI 32R211 OR/2111 R are BiCMOS monolithic integrated circuits designed for use with two-terminal

a2531

Abstract: 2112R
Contextual Info: ¿ilicotisystems S S I3 2 R 2 1 1 2 R 20-Channel Thin Film Read/Write Device A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES The SSI 3 2 R 2 1 12R is a BiC M O S m onolithic integrated circuit designed for use w ith tw o-term inal recording

H21Y

Abstract: HD14X HD14Y
Contextual Info: ê* é VM 313H24 VTC In c . W 24-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 FEATU R ES CONNECTION DIAGRAM • High Performance: - Read Mode Gain = 250V/V - Low Input Noise = 0.8nV/VHz Maximum - Input Capacitance = 25pF Maximum