H9 MARKING Search Results

Contextual Info: ADVANCE MT4LC16M4G3/H9 16 MEG X 4 DRAM |U|IC=RON 16 MEG x 4 DRAM DRAM 3.3V, EDO PAGE MODE • Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 13 row-addresses, 11 column-addresses G3 or 12 row-addresses, 12 column-addresses (H9)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 1SS344 SCHOTTKY BARRIER DIODE FEATURES  Low Forward Voltage  Fast Reverse Recovery Time  High Forward Current APPLICATIONS  High Speed Switching MARKING: H9

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 1SS344 SCHOTTKY BARRIER DIODE FEATURES  Low Forward Voltage  Fast Reverse Recovery Time  High Forward Current APPLICATIONS  High Speed Switching MARKING: H9

DMA366A3

Contextual Info: DMA366A3 Tentative Total pages page DMA366A3 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : H9 Package Code : SSSMini6-F2-B Internal Connection 6 5 4 Absolute Maximum Ratings Ta = 25 °C

594211

Abstract: 020C Erni 10N500
Contextual Info: 5,08 0,8 ±0,03 A A Technical Data: 6 0,1 0,8 h9 max. 17,9 +0,05 4,07 6,6 3 5,2 7,1 3 ±0,05 4,76 5,9 Insertion/withdrawel force per contact: Mechanical operations: Contact resistance inner conductor: outer conductor: Insulation resistance inner/outer conductor:

EDO DRAM

Abstract: 32-PIN MT4LC16M4G3 MT4LC16M4H9 MT4LC16M4H9DJ-5
Contextual Info: PRELIMINARY 16 MEG x 4 EDO DRAM TECHNOLOGY, INC. MT4LC16M4G3 MT4LC16M4H9 DRAM FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 12 row, 12 column addresses H9 or 13 row, 11 column addresses (G3)

TRANSISTOR MARKING 707

Abstract: H9 transistor marking transistor h9
Contextual Info: UMH9N IMH9A Transistor, digitai, dual, NPN, with 2 resistors Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMH9N and IMH9A; H9 • • • UMH9N (UMT6) 2.0+0.2 1,3±0.1 ,i. 3 i j 2 :p i 1 I

H9 transistor marking

Abstract: transistor h9
Contextual Info: 2SA1807F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A 1 80 7*Q , where ★ is hFE code and □ is lot number • 2.3 Ö u> 51 -01 r• r « H9 SS • high breakdown voltage, BVq £q = —600 V

EDO DRAM

Contextual Info: PRELIMINARY M IC B Q N Î H R AM U riMIVI d o d r Âm MT4LC16M4G3 MT4LC16M4H9 FEATURES • Single +3.3V +0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 12 row, 12 column addresses H9 or 13 row, 11 column addresses (G3)

Contextual Info: ADVANCE » / li p 'p n M I MT4LC16M4G3/H9 16 MEG X 4 DRAM 16 MEG x 4 DRAM DRAM 3.3V EDO PAGE MODE FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 13 row-addresses, 11 column-addresses G3 or

MT4LC16M4H9

Abstract: 4lc16m
Contextual Info: ADVANCE I TtCHNOLCGV INC. 16 MEG x 4 DRAM DRAM 3.3V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 13 row-addresses, 11 column-addresses (G3) or 12 row-addresses, 12 column-addresses (H9)

MT4LC16M4H9

Contextual Info: PRELIMINARY 16 MEG x 4 EDO DRAM |U|IC=RaN HR AM MT4LC16M4G3 MT4LC16M4H9 FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 12 row, 12 column addresses H9 or 13 row, 11 column addresses (G3) • High-performance CMOS silicon-gate process

MT4LC16M4H9 1995

Abstract: MT4LC16M4H9
Contextual Info: ADVANCE DRAM 16 MEG x 4 DRAM 3.3V, EDO PAGE MODE FEATURES • Single +3.3V +0.3V power supply • Industry-standard x4 pinout, tim ing, functions and packages • 13 row-addresses, 11 colum n-addresses G3 or 12 row-addresses, 12 colum n-addresses (H9) • High-perform ance CM OS silicon-gate process

Contextual Info: PRELIMINARY M IC R O N I 16 MEG x 4 EDO DRAM H D A M U r iM IV I MT4LC16M4G3 MT4LC16M4H9 FEATURES PIN ASSIGNMENT Top View OPTIONS H9 G3 • Packages Plastic SOJ (400 m il) Plastic TSOP (400 mil) A3 A4 A5 DJ TG* • Timing 50ns access 60ns access 32-Pin TSOP*

nichicon LOT date code

Abstract: Nichicon WEEK CODE sanelek cp 120 NICHICON DATE CODE MARKING
Contextual Info: S P E C I F I C A T I ON OF ALUMINUM ELECTROLYTIC U D sheet 1 of 21 s e r i CAPACITORS e s APPROVED 71. ¿ ¿ d L r DIG. No. H9 0 6 1 1F 1 ^ /9 ¡ J DESIGNED REV. LET. LET. CHECKED REVISIONS DATE N ICHI CON CORPORATION DR. CK. AP. sheet 2 1. SCOPE This specification covers ”U D series”chip type aluminum electrolytic

MT4LC16M4H9 1995

Abstract: 4LC16M MT4LC16M4H9
Contextual Info: ADVANCE M ir -D r n iV I I l,v " M L r . ! T MT4LC16M4G3/H9 16 MEG X 4 DRAM 16 MEG x 4 DRAM DRAM 3.3V, EDO PAGE MODE m FEATURES PIN ASSIGNMENT Top View • Sin gle + 3 .3 V ± 0 .3 V p o w er sup p ly • Ind u stry-stan d ard x4 pin o u t, tim in g , fu nctio n s and

K9HDG08U1A

Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Contextual Info: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks

K9F2G08U0C

Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Contextual Info: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: MLX90360  Triaxis Position Sensor IC Features and Benefits Triaxis Hall Technology On Chip Signal Processing for Robust Absolute Position Sensing Simple Magnetic Design Programmable Measurement Range Programmable Linear Transfer Characteristic Multi-points or Piece-Wise-Linear

Toggle Switches

Abstract: toggle ic marking code H8 marking code 2C 2C11 marking H9
Contextual Info: TOGGLE SWITCHES TOGGLE SWITCHES SERIES 2C AGENCY APPROVALS IP67 • Sealed surface mount sub-miniature toggle switches SPECIFICATIONS In conformity with: • EN 60529: 1991 • IEC 529: 1989 CHARACTERISTICS • Supplied on Tape and Reel for automatic machine feed.

tag h9

Abstract: E195524 1B21-N2F4V9AE 1B11-N2F4H9AE 1B3X Toggle Switches
Contextual Info: TOGGLE SWITCHES SERIES 1B AGENCY APPROVALS SPECIFICATIONS Contact Rating: S silver - 5A with resistive load @ 125 VAC or 28 VDC - 2A with resistive load @ 250 VAC A (gold) - 0.4 VA max @ 20 VAC or DC max Electrical life: 50,000 make and break cycles at full load

Contextual Info: ATC 600S Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0603 • Laser Marking Optional • RoHS Compliant • High Self Resonance Frequencies

1B11-NF4PCAE

Abstract: 1b11 1b1-1 E195524 1B21-NF4PCAE TAG 90 1B2X 3PDT toggle switch terminal layout
Contextual Info: TOGGLE SWITCHES SERIES 1B AGENCY APPROVALS SPECIFICATIONS Contact Rating: S silver - 5A with resistive load @ 125 VAC or 28 VDC - 2A with resistive load @ 250 VAC A (gold) - 0.4 VA max @ 20 VAC or DC max Electrical life: 50,000 make and break cycles at full load