H7N0603DS Search Results

H7N0603DS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
H7N0603DS		Renesas Technology	Silicon N Channel MOS FET	Original	PDF	103.15KB	11
H7N0603DS		Renesas Technology	MOSFET, Switching; VDSS (V): 60; ID (A): 30; Pch : 40; RDS (ON) typ. (ohm) @10V: 0.011; RDS (ON) typ. (ohm) @4V[4.5V]: [0.016]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3200; toff ( us) typ: 0.09; Package: DPAK (S)	Original	PDF	79.31KB	9

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Renesas Electronics Corporation


Renesas Electronics Corporation H7N0603DS90TR-E NCH POWER MOSFET 60V 30A 15MOHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	H7N0603DS90TR-E	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $3.64	Buy Now
Renesas Electronics Corporation H7N0603DSTR-E
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Chip Stock	H7N0603DSTR-E		7,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

H7N0603DS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
H7N0603DL Abstract: H7N0603DS td 2003 ap A120A Contextual Info: H7N0603DL, H7N0603DS Silicon N Channel MOS FET High speed power Switching REJ03G0123-0100Z Rev.1.00 Oct.14.2003 Features • Low on - resistance RDS on = 11 mΩ typ. • Low drive current • Capable of 4.5 gate drive Outline DPAK-2 D DPAK-S 4 4 G 1 2 3	Original	H7N0603DL, H7N0603DS REJ03G0123-0100Z H7N0603DL H7L0603DS H7N0603DL H7N0603DS td 2003 ap A120A	PDF
H7N0603DL Abstract: H7N0603DS PRSS0004ZD-B PRSS0004ZD-C Contextual Info: H7N0603DL, H7N0603DS Silicon N Channel MOS FET High speed power Switching REJ03G0123-0200 Rev.2.00 Jan.26.2005 Features • Low on - resistance RDS on = 11 mΩ typ. • Low drive current • Capable of 4.5 gate drive Outline PRSS0004ZD-B (Previous code: DPAK(L)-2)	Original	H7N0603DL, H7N0603DS REJ03G0123-0200 PRSS0004ZD-B PRSS0004ZD-C H7N0603DL Unit2607 H7N0603DL H7N0603DS PRSS0004ZD-B PRSS0004ZD-C	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	do-900 Unit2607	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
H7N0603DL Abstract: H7N0603DS PRSS0004ZD-B PRSS0004ZD-C Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	d-900 Unit2607 H7N0603DL H7N0603DS PRSS0004ZD-B PRSS0004ZD-C	PDF