H372 Search Results

3500S-1-102L

Abstract: 3500S-1-103L 3500S-1-502L 3500S-2-102L 3500S-2-103L 3500S-2-502L 3501H-1-102L H-37-2 H-38-2 3501H-1-RC
Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • Bushing mount ■ Sealable ■ Non-standard features and specifications available ■ Optional high torque feature ■ Optional center tap feature ■ Gangable 3500/3501 - Precision Potentiometer

3543S-1-102L

Abstract: 3543S-1-103L 3543S-1-202L 3543S-1-502L 3545S-1-102L 3545S-1-202L H-37-2 H-38-2
Contextual Info: Non-RoHS complaint versions are available until June 1, 2010. *R oH VE S CO AV R M AI SIO PL LA N IA BL S NT E Features • ■ ■ ■ Bushing mount Optional AR pin feature Non-standard features and specifications available Gangable 3543/3545 - Precision Potentiometer

B 103 Potentiometers

Abstract: 3500S-1-102L 3500S-1-103L 3500S-1-502L 3500S-2-102L 3500S-2-103L 3500S-2-502L 3501H-1-102L H-37-2 H-38-2
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • *R ■ ■ ■ ■ ■ Bushing mount Sealable Non-standard features and specifications available Optional high torque feature Optional center tap feature Gangable 3500/3501 - Precision Potentiometer

TL205

Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's

PG-DSO-20

Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test

H-382

Contextual Info: PL IA NT CO M *R oH S Features • Bushing mount ■ Excellent resolution ■ High rotational life ■ Non-standard features and specifications available 6637 - Precision Potentiometer Electrical Characteristics1 Product Dimensions Standard Resistance K to 100 K ohms

Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features Model 3400 is currently available, although not recommended for new designs. Model 3500 is preferred. • Bushing mount ■ Optional ±0.05 linearity option ■ Excellent wiper stability ■ High stop strength

Contextual Info: Features • ■ ■ ■ ■ 51 mm 2 ” diameter, single-turn conductive plastic Excellent resolution High rotational life Bushing mount Gangable up to 10 cups Model 6674 is currently available, although not recommended for new designs. Model 6657 is preferred.

H-382

Contextual Info: Model 3400 is currently available, although not recommended for new designs. Model 3500 is preferred. Features • ■ ■ ■ ■ Bushing mount Optional ±0.05 linearity option Excellent wiper stability High stop strength Sealable 3400 - Precision Potentiometer

BCP56

Abstract: LM7805 PTFA190451E PTFA190451F RO4350
Contextual Info: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,

3540S-1-102L

Abstract: 3540S-1-103L 3540S-1-201L 3540S-1-202L 3540S-1-501L 3540S-1-502L H-37-2 H-38-2
Contextual Info: PL IA NT Features CO M • Bushing mount ■ RoHS compliant* *R oH S ■ Optional center tap and rear shaft extension ■ Optional AR lug feature ■ Gangable with common or concentric shafts ■ High torque available ■ Non-standard features and specifications

3400S-1-102L

Abstract: 3400S-1-103L 3400S-1-502L H-37-2 H-38-2
Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features Model 3400 is currently available, although not recommended for new designs. Model 3500 is preferred. • Bushing mount ■ Optional ±0.05 linearity option ■ Excellent wiper stability ■ High stop strength

3500S-1-102L

Abstract: 3500S-1-103L 3500S-1-502L 3500S-2-102L 3500S-2-103L 3500S-2-502L 3501H-1-102L H-37-2 H-38-2
Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • Bushing mount ■ Sealable ■ Non-standard features and specifications available ■ Optional high torque feature ■ Optional center tap feature ■ Gangable 3500/3501 - Precision Potentiometer

Contextual Info: PL IA NT Features CO M • Essentially infinite resolution *R oH S ■ Excellent rotational life ■ High quality, rugged construction ■ General purpose applications ■ Non-standard features available ■ Cost and space saving 6539/6639 - Precision Potentiometer

B 103 Potentiometers

Abstract: 3400S-1-102L 3400S-1-103L 3400S-1-502L H-37-2 H-38-2
Contextual Info: Model 3400 is currently available, although not recommended for new designs. Model 3500 is preferred. oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • *R ■ ■ ■ ■ Bushing mount Optional ±0.05 linearity option Excellent wiper stability High stop strength

6539S-1-102

Abstract: 6539S-1-103 6539S-1-502 6639S-1-102 6639S-1-202 6639S-1-502 H-37-2 H-38-2
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ ■ Essentially infinite resolution Excellent rotational life High quality, rugged construction General purpose applications Non-standard features available Cost and space saving 6539/6639 - Precision Potentiometer

PTFB090901EA

Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB

H-38-2

Abstract: 3435S-1-103 3435S-1-102 3435S-1-202 3435S-1-502 3435S-1-503 H-37-2 MIL-R-12934
Contextual Info: Features • ■ ■ ■ ■ Model 3435 is currently available, although not recommended for new designs. Model 6657 is preferred. 27 mm 1-1/16 ” diameter, single-turn wirewound Bushing mount Gangable to 8 cups Outstanding vibration and shock performance

LM7805

Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
Contextual Info: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in

ssy 1920

Abstract: LM 2931 AT 05 BCP56 LM7805 PTFA191001E PTFA191001F
Contextual Info: PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA,

Contextual Info: HMC372LP3 / 372LP3E v02.0605 AMPLIFIERS - SMT 8 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC372LP3 / HMC372LP3E is ideal for basestation receivers: Noise Figure: <1.0 dB • GSM, GPRS & EDGE Gain: 15 dB • CDMA & W-CDMA

Contextual Info: PL IA N T Features M • Bushing mount ■ RoHS compliant* *R oH S CO ■ Optional center tap and rear shaft extension ■ Optional AR lug feature ■ Gangable with common or concentric shafts ■ High torque available ■ Non-standard features and specifications

ATC-600A

Abstract: BCP56 LM7805 PTFA212001E PTFA212001F RO4350
Contextual Info: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier

a2324

Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
Contextual Info: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,