H21E2 Search Results

semikron SK 50 DB 100 D

Contextual Info: SIE D Ö13bb71 GÜG3ÖDD 11T S EM IK R O N SEMIKRON INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, Vbe = - 2 V Values > CM I II III m > VcEV Units 1200 V 1200 V V VCBO Ie = 0 1200 V ebo lc = 0 7 V lc D. C. 50 A tp = 1 ms 100 A D. C. 50 A ICM If = - l c

Contextual Info: 51E 5 • Ôl3bb71 000377b 070 M S E K G seMIKRDN SEfäKRÖN- INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A , Vbe = - 2 V > CM I II UJ CD > VcBO Ie = lc Units 1200 V 1200 V 1200 V I VcEV Values 7 V lc D. C. 300 A If = - lc D. C. 300 A V ebo = Ib Ptot

Semikron sk 30 dal

Contextual Info: SIE D • Ö13bb71 0 0 0 3 7 0 0 ä^S « S E K G semikron^inF "— s e m ik r d n Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, Vbe = —2 V ICM = II II o o m o D. C. lc If > V ebo CM I II LU CÛ VCBO > VCEV Values -lc 1200 V 1200 V 1200 v 7 V 30 A tp = 1 ms

SK 50 DB 060D

Abstract: B794 Semitrans Semikron sk 75 DB060D DDQ3617 H21E
Contextual Info: SIE D •'sT h ■ fil3bb?l D003ölb SÔ7 « S E K Ö Sr ö h I hT SEMIKRDN - Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V Values Units V V 600 V I 600 600 SEMITRANS 3 NPN Power Darlington Modules 100 A, 600 V II o m I CM > II UJ VcBO

semikron semitrans

Abstract: Semikron sk 51 Semikron sk 50 da
Contextual Info: s e M IK R ü n Maximum Ratings Conditions Values Units VcEVsus lc = 1 A, V be = - 2 V 1200 V VCEV V be = - 2 V 1200 V VcBO Ie = 0 1200 V 7 V O II o Sym bol V ebo lc D. C. 300 A If = - lc D. C. 30 0 A Ib 16 A 1980 W Tvj - 4 0 . . . + 150 °C Tstg - 4 0 . . . + 125

Contextual Info: SEM IK R G N 1SE D I INC f i l i t i t,71 GGQIVO? 4 | T 33 seMSKRDn Maximum Ratings Symbol Conditions VcEVsus VCEV VcBO V ebo lc I! = 1 II I ro < m < CD m ICM = lc D .C. tp = 1 ms lc If 1000 1000 1000 7 50 100 1 A.Vbe = - 2 V = • Ib Ptot Tvi Tease = 25 °C

Contextual Info: SIE D Ö13bb71 □□D3ÔPÔ ST1 » S E K G • SEMIKRDN SEMIKRON INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, - 2 600 V V II V o V 600 V ebo o 600 o II I m Vbe = Units > II CM UJ CO > VcEV Values 7 V lc D. C. 150 A tp = 1 ms 300 A If = - l c 150

Contextual Info: 51E D fil3hb?l D D G 3 7 Û 4 1M7 SEMIKRON S E M I K R O N INC Maximum Ratings Symbol Conditions VcEVsus lc VcEV CÛ > 1 A, Vbe = - 2V > CM I II LU VcBO = Ie = 0 Values Units 1000 V 1000 V 1000 V V ebo lc = 0 7 V lc D. C. 30 A tp = 1 ms 60 A D. C. 30 A ICM

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Contextual Info: s em ik r o n Maximum Ratings Conditions VcEVsus lC = 1 A, V be = - 2 V Values Units 1200 V CD m ll I ro < Symbol i VCEV 1200 V 1200 V VCBO Ie = 0 V eb o lc = 0 7 V lc D. C. 100 A tp = 1 ms 200 A D. C. 100 A 5 A ICM If = - l c Ib 800 Tcase = 25 °C Ptot Tvi

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Semikron sk 100 dal

Abstract: semitrans 0DB120 NPN Power Darlington Modules
Contextual Info: s e m ik r o n Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, Vbe =- 2 V > CVJ ,I h: UJ CD > VcEV lE = 0 VcBO lc ICM =0 Units 1200 V 1200 V 1200 V 7 V D. C. 100 A tp = 1 ms 20 0 A lc V ebo Values If = - l c 100 A Ib 5 A Tease = 25 °C; per darlington

SK200DA120D

Abstract: mikron
Contextual Info: se MIKRON Values Units lc = 1 A , Vbe = - 2 V 1200 V ro < Maximum Ratings 1200 V 1200 V 7 V Conditions VcEVsus o < V ebo II VcBO O VcEV o ii LU CD m II I Symbol lc D. C. 2 00 A If = - l c D. C. 200 A Ib 10 A Ptot Tease = 2 5 ° C 1560 W Tvj - 4 0 . . . + 150

3sk100

Contextual Info: s e M IK R O n Units lc = 1 A, Vbe = - 2 V 600 V 600 V 600 V Conditions VcEVsus V cev VcBO V ebo lc Ic M If = - l c 7 V D. C. 100 A tp = 1 ms 200 A D. C. 100 A 6 A 620 W Tv, - 4 0 . . . + 150 °C Tstg - 4 0 . . . + 125 °C 2500- V Ib Ptot Visol SEMITRANS 2

Contextual Info: SIE D • Ö13bt>71 DDD37Ö0 ST1 m S E K G s e h ik r ö n T n T SEMIKRDN — Maximum Ratings Symbol Conditions Values Units lc = 1 A, Vbe = - 2 V 600 V VcEV V be = - 2 V 600 V VcBO Ie = 0 600 V VcEVsus V ebo lc = 0 7 V lc D. C. 30 A ICM If = - lc tP = 1 ms

Contextual Info: m Ö13bt,71 ÜGü37Sb 565 m S E K G SIE T> SEMIKRON INC SEMIKRON - Maximum Ratings Symbol Conditions VcEVsus Values Units VcBO V 600 lc = 0 D. C. 7 V 200 h V ebo < CO m II I ro < V V o 600 600 ; UJ lc = 1 A, Vbe = - 2 V VcEV Tvj - 4 0 . . . + 150 Tstg

Halbleiterbauelemente DDR

Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
Contextual Info: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT­ BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder

SF126

Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
Contextual Info: Der Kollektor ist mit der metallischen Montageflache leitend verbunden Uw e Beier Transistoren aus dem Kombinat Mikroelektronik electrónica • Band 245 UWE BEIER Transistoren aus dem Kombinat M ikroelektronik M ILITARVERLAG DER DEUTSCHEN DEM OKRATISCHEN

npn SK100

Abstract: Semikron sk 100 dal b796 SK100 DATA SK100 SK100DB100D SK 30 DB 100D Semikron sk 51 B798 DG03A2D
Contextual Info: Öl3bb71 DG03Ö2D TDfi • SEK G S1E D SEMIKRON SEMIKRON INC Maximum Ratings Values Units lc = 1 A, Vbe = - 2 V 1000 V > 1000 V 1000 V Symbol Conditions VcEVsus CM UJ CD I II > VcEV i Ie = 0 V ebo o II o VcBO 7 V lc D. C. 100 A tp = 1 ms 200 A 100 A ICM i

SK150

Contextual Info: s e m ik r o n Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V V Ie = 0 V ebo O II O VcBO D. C. lc 1 ms tp = ICM = Units 1200 > CM I II LU CD > VcEV If Values - lc Ib Tease Ptot = 25 °C 1200 V 1200 V 7 V 150 A 300 A 150 A 8 A 1000 W 150 °C

3SK100

Contextual Info: s e MIKRO n Maximum Ratings Conditions Values Units VcEVsus lc = 1 A, V be = - 2 V 600 V V be = - 2 V 600 V 600 V VcEV II LU VcBO o Symbol V ebo lc = 0 7 V lc D. C. 100 A tp = 1 ms 200 A 100 A ICM If = - l c 6 A 620 W Tvi - 4 0 . . . + 150 °C Tstg - 4 0 . . . + 125

Semikron sk 100 dal

Abstract: Semikron sk 50 dal
Contextual Info: S1E D Ô13bb71 □□0303ti 375 SEMIKRON INC s e Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V lc ICM > 1200 V SEMITRANS 3 NPN Power Darlington Modules 150 A, 1200 V 1200 V V SK 150 DB 120 D SK 150 DAL 120 D V A tp = 1 ms 300 A 150 A II

SK 30 DB 100D

Contextual Info: SIE J> • Ö13LL71 0003Ö0Ö 4DD M S E K G SEMIKRQN SEMIKRON INC Maximum Ratings Symbol Conditions Values Units lc = 1 A, Vbe = - 2 V 1000 V VcEV Vbe = - 2 V 1000 V VcBO Ie = 0 1000 V V ebo lc = 0 7 V lc ICM If = -lc Ib D. C. 75 tP= 1 ms 150 - 4 0 . . . + 125

TRANSISTOR BC 327

Abstract: h21e bc 327 complementary pair transistor BC 337 transistor AS 337 transistor BC 327 40 transistor bc 630 TRANSISTOR BC 328 BC327 transistor 327
Contextual Info: *B C 3 2 7 BC328 NP SILICON TRANSISTORS, EPITAXIAL PLANAR R A N S IS T O R S PNP S IL IC IU M , P L A N A R E P IT A X IA U X ompl. of BC 337 and BC 338 îf; Preferred device Dispositif recommandé he BC 327 and BC 328 transistors are intended fo r a ide variety o f medium power AF am plifier and switlin g application ; they are particulary useful as