H20 MOSFET Search Results

IRFG1Z0

Abstract: irfh25 irfg9110 IRFH150
Contextual Info: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15

in5231

Abstract: driver piezo print heads inkjet print head interface ic a 2231 piezo print head inkjet print head driver HV507 IN4002 voltage direction piezo head of inkjet IN5245
Contextual Info: AN-H20 Application Note HVCMOS Drivers for Non-Impact Printing This article discusses the use of monolithic high voltage ICs for non-impact printing and plotting applications. Supertex’s HVCMOS process technology allows combining low voltage logic as well as high voltage DMOS outputs up to 400V on

IR BOOST CHARGER BM 125

Abstract: FCM2012V-121RC10-0805 W83L517 SiS301 R5460 d38aa u3843 STAC97 G731 MF3 IC D41
Contextual Info: B A 3 1 1 H26 HOLEC217D67BC67 H25 HOLEC217D67BC67 H9 HOLEC217D67BC67 H11 HOLEC217D67BC67 H10 HOLEC256D106 1 9 8 7 6 H17 HOLES256X325D106 2 9 3 8 4 7 5 6 H22 HOLES256X325D106 2 9 3 8 4 7 5 6 1 H12 HOLEC335D185 C H2 HOLEC256D106 2 3 4 5 1 H20 HOLES256X325D106

KK0G733011020

Abstract: DC-533 MOSFET B20 p03 G733 W83L950 l7912 GP57 diode DB3 C531 xa1720 UV111
Contextual Info: B 1 D 1 1 9 8 7 6 1 EMI H12 HOLEC256D106P2-V8 2 9 3 8 4 7 5 6 1 H13 HOLEC256D106P2-V8 2 9 3 8 4 7 5 6 1 9 8 7 6 H15 HOLEC256D106P2-V8 2 3 4 5 H23 SMD157X98 1 H20 HOLEC256D106P2 1 H8 HOLEC334D184P2 1 H14 HOLEC256D106P2-V8 2 3 4 5 1 1 1 H7 HOLEC334D184P2 1 H5

6786U

Abstract: 6802U 6800U 6792U
Contextual Info: Government and Space Products International Rectifier IQ R *D Part Number i = 2 5 ° c ^DS(on Bvdss (A) (V) r ^ ir c (A) h @ T r = 25°C W Fox on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs LCC JA N TX 2N 6796U 100 JA N TX2N 6798U

h20 smd

Contextual Info: International I« R Rectifier •o Part Number ¿2 Government and Space Products Tf=25°C W RDS on bVDSS (V) Tf=100°C (A) Pd @ T r= 2 5 °C (W) a Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs LCC N-Channel IR F E 0 2 4 60

Contextual Info: Internationa I Iô R Rectifier Government and Space Products Id Part Number VDSS RoSfon ffi T C=25°C M W ^ pd T ^ IO O ’C Total “ ose Rating W RBds Si) @ Tr = 25°C W Number HEXFET ® Power MOSFETs f ose Demand Outline Key Radiation Hardened LCC N-Channel

Contextual Info: Government and Space Products International IQ R Rectifier •d Pa rt Num ber b vdss R DS on (V) (£ 1 T f= 2 S °C (A) Pd @ Tr= 2 5 °C T f= 10 0 °C (A ) (W ) Fax on Dem and Num ber Case O u t lin e Key Herm etic Packages HEXFET Power MOSFETs LCC IRf-'E9220

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

8279-5

Abstract: 27101 IRFK3DC50 IRFK3F450 82790
Contextual Info: International IQR Rectifier N T Ç i i N À » I C :tu t,fc HEXFET Power MOSFETs / .S N - S p c Kj « * ’ 1 '12 •o V BR DSS >D Re Drain-to-Source ^DS(on) Pulse Continuous Po Breakdown On-State Drain Current Drain Current Max. Thermal Max. Power Part

82792

Abstract: irfk3d450
Contextual Info: International I Ö R Rectifier Part v BR 0SS Draln-to-Source Breakdown Voltage Num ber (V) IN 'CkN /I-C-»*. »¿.C ifFt» HEXFET Power MOSFETs RDS(on) On-State Resistance w •d •d R Pulse Continuous p0 Drain Current Drain Current M a x. Thermal M a x. Power

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

JANSR2N7261

Contextual Info: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

2n7226

Abstract: transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228 2N7228U
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 1996 IINCH-POUND MIL-PRF-19500/592C 21 June 1996 SUPERSEDING MIL-S-19500/592B 31 January 1991 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

RFD8P05SM

Contextual Info: HARRIS SEHICOND SECTOR bfiE D • 4302E71 00510^5 070 ■ PCF8P05W P^^FSPOSD HARRIS S E M I C O N D U C T O R P-Channel MOS Chip January 1993 Features • HAS Die Passivated • Contact Metallization - Gate and Source - Aluminum Silicon • Drain • Tri-Metal AI-Ti-NI

transistor N43

Abstract: harris 34
Contextual Info: HARRIS SENICOND SECTOR g ì H W bôE D • 4302271 OGSlllfl ÌO? ■ HAS PCF420W a r r is F4SP SE MI C ON D UC T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization • Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni

rfd3055rle

Abstract: RFD3055RLESM
Contextual Info: H A RR IS SEIIICOND SECT OR bflE D • 430 2 27 1 DDSlDHfl S'il ■ HAS PCF12N06RLEW PCF12N06RLED H A R R IS S E M I C O N D U C T O R January1993 N-Channel MOS Chip Die Features • Passivated • Contact Metallization - Gate and Source - Aluminum Silicon

h20 mosfet

Abstract: PCF25N05D fusee
Contextual Info: HARRIS SEHICOND SECTOR S bflE D • 4302271 0051150 StS ■ HAS PCF25N05W PCF25N05D h a r r is S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum Silicon - Drain - Tri-Metal Al-Ti-Ni

HARRIS IRFD110

Abstract: IRF510
Contextual Info: H AR RIS SEIUCOND SECTOR bflE D • 430EB71 O D S lD ib ■ HAS PCF110W HARRIS a 41b SEMICONDUCTOR P January1993 ^ j F 1 1 O D N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-Ti-NI

PCF14N

Abstract: RFD10N05SM RFD10N05
Contextual Info: HARRI S SEUI COND SECTOR LflE D • M30BB71 OOSl l Ofl ■ HAS PCF14N05W P^^F14NI05[^ h a r r is S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features • Tbfl Die Passivated • Contact Metallization - Gate and Source - Aluminum Silicon - Drain - Tri-Metal Al-Ti-Ni

IRF630 HARRIS

Abstract: Transistor irf230 BUZ30 5A/IRF630 HARRIS
Contextual Info: HARRIS SEMICOND SECTOR tflE D • M30E271 QOS1 1 1 4 S E M I C O N D U C T O R January 1993 N “C h 3 n n l M O S C h ip Die Features • HAS PCF230W HARRIS a ■ Passivated • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni

Contextual Info: H A RR IS S E M I C O N D SECT OR bflE 5 • Œ\ h a r r i s \M J 430 2 27 1 □ 0 5 1 DÛ 4 .7T4 ■ HAS PCF15N06LW PCF15N06LD S E M I C O N D U C T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum

rfp12n10

Contextual Info: HARRIS SEHICOND SECTOR böE D • 4302271 00S11G0 777 ■ HAFRFR1S UU PCF12N10W P^jF12N1 OEJ S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Die Features • HAS Passivated W • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni