H20 MOSFET Search Results

IR BOOST CHARGER BM 125

Abstract: FCM2012V-121RC10-0805 W83L517 SiS301 R5460 d38aa u3843 STAC97 G731 MF3 IC D41
Contextual Info: B A 3 1 1 H26 HOLEC217D67BC67 H25 HOLEC217D67BC67 H9 HOLEC217D67BC67 H11 HOLEC217D67BC67 H10 HOLEC256D106 1 9 8 7 6 H17 HOLES256X325D106 2 9 3 8 4 7 5 6 H22 HOLES256X325D106 2 9 3 8 4 7 5 6 1 H12 HOLEC335D185 C H2 HOLEC256D106 2 3 4 5 1 H20 HOLES256X325D106

KK0G733011020

Abstract: DC-533 MOSFET B20 p03 G733 W83L950 l7912 GP57 diode DB3 C531 xa1720 UV111
Contextual Info: B 1 D 1 1 9 8 7 6 1 EMI H12 HOLEC256D106P2-V8 2 9 3 8 4 7 5 6 1 H13 HOLEC256D106P2-V8 2 9 3 8 4 7 5 6 1 9 8 7 6 H15 HOLEC256D106P2-V8 2 3 4 5 H23 SMD157X98 1 H20 HOLEC256D106P2 1 H8 HOLEC334D184P2 1 H14 HOLEC256D106P2-V8 2 3 4 5 1 1 1 H7 HOLEC334D184P2 1 H5

6786U

Abstract: 6802U 6800U 6792U
Contextual Info: Government and Space Products International Rectifier IQ R *D Part Number i = 2 5 ° c ^DS(on Bvdss (A) (V) r ^ ir c (A) h @ T r = 25°C W Fox on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs LCC JA N TX 2N 6796U 100 JA N TX2N 6798U

Contextual Info: Internationa I Iô R Rectifier Government and Space Products Id Part Number VDSS RoSfon ffi T C=25°C M W ^ pd T ^ IO O ’C Total “ ose Rating W RBds Si) @ Tr = 25°C W Number HEXFET ® Power MOSFETs f ose Demand Outline Key Radiation Hardened LCC N-Channel

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

8279-5

Abstract: 27101 IRFK3DC50 IRFK3F450 82790
Contextual Info: International IQR Rectifier N T Ç i i N À » I C :tu t,fc HEXFET Power MOSFETs / .S N - S p c Kj « * ’ 1 '12 •o V BR DSS >D Re Drain-to-Source ^DS(on) Pulse Continuous Po Breakdown On-State Drain Current Drain Current Max. Thermal Max. Power Part

82792

Abstract: irfk3d450
Contextual Info: International I Ö R Rectifier Part v BR 0SS Draln-to-Source Breakdown Voltage Num ber (V) IN 'CkN /I-C-»*. »¿.C ifFt» HEXFET Power MOSFETs RDS(on) On-State Resistance w •d •d R Pulse Continuous p0 Drain Current Drain Current M a x. Thermal M a x. Power

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

JANSR2N7261

Contextual Info: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

h06 diode

Abstract: DN-H06 HV9931 dimmer chokes power control circuit 220vdc ES1J DIODE ES1J SCHEMATIC dimmer mov-10 d2 diode series
Contextual Info: DN-H06 14W Off-line LED Driver, 120VAC, PFC, 14V, 1.0A Load Specifications Parameter Value AC line voltage 100 - 135VAC LED string voltage 0 - 14V LED current 1.0A Switching frequency 70 - 120kHz Design Note The input line current features low harmonic distortion, satisfying the requirements of EN 61000-3-2 Class C (Lighting

2n7226

Abstract: transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228 2N7228U
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 1996 IINCH-POUND MIL-PRF-19500/592C 21 June 1996 SUPERSEDING MIL-S-19500/592B 31 January 1991 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

RFD8P05SM

Contextual Info: HARRIS SEHICOND SECTOR bfiE D • 4302E71 00510^5 070 ■ PCF8P05W P^^FSPOSD HARRIS S E M I C O N D U C T O R P-Channel MOS Chip January 1993 Features • HAS Die Passivated • Contact Metallization - Gate and Source - Aluminum Silicon • Drain • Tri-Metal AI-Ti-NI

transistor N43

Abstract: harris 34
Contextual Info: HARRIS SENICOND SECTOR g ì H W bôE D • 4302271 OGSlllfl ÌO? ■ HAS PCF420W a r r is F4SP SE MI C ON D UC T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization • Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni

h20 mosfet

Abstract: PCF25N05D fusee
Contextual Info: HARRIS SEHICOND SECTOR S bflE D • 4302271 0051150 StS ■ HAS PCF25N05W PCF25N05D h a r r is S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum Silicon - Drain - Tri-Metal Al-Ti-Ni

HARRIS IRFD110

Abstract: IRF510
Contextual Info: H AR RIS SEIUCOND SECTOR bflE D • 430EB71 O D S lD ib ■ HAS PCF110W HARRIS a 41b SEMICONDUCTOR P January1993 ^ j F 1 1 O D N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-Ti-NI

PCF14N

Abstract: RFD10N05SM RFD10N05
Contextual Info: HARRI S SEUI COND SECTOR LflE D • M30BB71 OOSl l Ofl ■ HAS PCF14N05W P^^F14NI05[^ h a r r is S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features • Tbfl Die Passivated • Contact Metallization - Gate and Source - Aluminum Silicon - Drain - Tri-Metal Al-Ti-Ni

IRF630 HARRIS

Abstract: Transistor irf230 BUZ30 5A/IRF630 HARRIS
Contextual Info: HARRIS SEMICOND SECTOR tflE D • M30E271 QOS1 1 1 4 S E M I C O N D U C T O R January 1993 N “C h 3 n n l M O S C h ip Die Features • HAS PCF230W HARRIS a ■ Passivated • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni

Contextual Info: H A RR IS S E M I C O N D SECT OR bflE 5 • Œ\ h a r r i s \M J 430 2 27 1 □ 0 5 1 DÛ 4 .7T4 ■ HAS PCF15N06LW PCF15N06LD S E M I C O N D U C T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum

rfp12n10

Contextual Info: HARRIS SEHICOND SECTOR böE D • 4302271 00S11G0 777 ■ HAFRFR1S UU PCF12N10W P^jF12N1 OEJ S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Die Features • HAS Passivated W • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni

h20 mosfet

Contextual Info: HARRI S SENI COND SECTOR bôE D • 4302271 0DS111E HAFRFRIS 4TT ■ HAS PCF210W F2 1OD S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-NI

RFL10N15

Abstract: 330 e57
Contextual Info: H A RR IS S E N I C O N D SECT OR bflE D • 430 E57 1 G D S 1 QT 4 t,43 ■ HARRIS HAS P C F 10N 15W P^jF1 0N15D SEMICONDUCTOR January 1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal AI-TI-Ni

IRF9530 Harris

Contextual Info: HARRIS £ * H A SEmCOND R R SECTOR 430 2 27 1 o a s i i a a 54T bflE D PCF12P10W PCF12P10D I S SEMI C ON DU C T O R P-Channel MOS Chip January 1993 Die Features • HAS Passivated • Contact Metallization - Gate and Source - Aluminum - Drain-Tri-Metal AI-TI-Ni)

Contextual Info: HARRIS SEflICOND SECTOR bflE D • 430B271 Q0S10A5 T21 ■ £15 H A R R IS W PCFC40W 4QIP S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features • HAS Die Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni