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    H2 SD TRANSISTOR Search Results

    H2 SD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    		Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    		Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    		Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    		Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    		Rochester Electronics LLC NPN microwave power transistor PDF Buy

    H2 SD TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DD 127 D TRANSISTOR

    Abstract: STP4NA100
    Contextual Info: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC


    Original     		STP4NA100 O-220 DD 127 D TRANSISTOR STP4NA100 PDF

    STP53N08

    Contextual Info: STP53N08 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP53N08 80 V < 0.024 Ω 53 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.018 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP53N08 100oC O-220 STP53N08 PDF

    DD 127 D TRANSISTOR

    Abstract: STP4NA100
    Contextual Info: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP4NA100 100oC O-220 DD 127 D TRANSISTOR STP4NA100 PDF

    STP60N06

    Abstract: STP60N05-14 STP60N06-14
    Contextual Info: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		STP60N05-14 STP60N06-14 100oC O-220 STP60N06 STP60N05-14 STP60N06-14 PDF

    P80N06-10

    Abstract: p80n06 STP80N06-10
    Contextual Info: STP80N06-10 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P80N06-10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.010 Ω 80 A TYPICAL RDS(on) = 8.5 mΩ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED


    Original     		STP80N06-10 P80N06-10 O-220 P80N06-10 p80n06 STP80N06-10 PDF

    STP53N08

    Abstract: STP53
    Contextual Info: STP53N08 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP53N08 80 V < 0.024 Ω 53 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.018 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP53N08 100oC O-220 STP53N08 STP53 PDF

    P80N03

    Abstract: P80N03L-06
    Contextual Info: STP80N03L-06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TENTATIVE DATA TYPE V DSS R DS on ID ST P80N03L-06 30 V < 0.006 Ω 80 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP80N03L-06 P80N03L-06 100oC 175oC O-220 P80N03 P80N03L-06 PDF

    P60N06

    Abstract: P60N06-14 p60n05 P60N05-14 p60n P60n0 STP60N05-14 STP60N06-14 stp60n06
    Contextual Info: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P60N05-14 ST P60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS o n ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		STP60N05-14 STP60N06-14 P60N05-14 P60N06-14 100oC O-220 P60N06 P60N06-14 p60n05 P60N05-14 p60n P60n0 STP60N05-14 STP60N06-14 stp60n06 PDF

    STP2NA50

    Abstract: STP2NA50FI P011C
    Contextual Info: STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP2NA50 STP2NA50FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V <4Ω <4Ω 2.8 A 2A TYPICAL RDS(on) = 3.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    Original     		STP2NA50 STP2NA50FI 100oC O-220 ISOWATT220 STP2NA50 STP2NA50FI P011C PDF

    IRF530

    Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
    Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		IRF530 IRF530FI IRF530F 100oC 175oC O-220 O-220FI IRF530 transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530 PDF

    DD 127 D TRANSISTOR

    Abstract: STP4NA100
    Contextual Info: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC


    Original     		STP4NA100 O-220 DD 127 D TRANSISTOR STP4NA100 PDF

    p80n05

    Contextual Info: STP80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P80N05-09 • ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.009 Ω 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY


    Original     		STP80N05-09 P80N05-09 O-220 p80n05 PDF

    STP80N03L-06

    Contextual Info: STP80N03L-06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR TENTATIVE DATA TYPE V DSS R DS on ID STP80N03L-06 30 V < 0.006 Ω 80 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP80N03L-06 100oC 175oC O-220 STP80N03L-06 PDF

    STP80N06-10

    Abstract: STP80N06
    Contextual Info: STP80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP80N06-10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.010 Ω 80 A TYPICAL RDS(on) = 8.5 mΩ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED


    Original     		STP80N06-10 O-220 STP80N06-10 STP80N06 PDF

    BUZ10

    Abstract: buz10 MOROCCO
    Contextual Info: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 20 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		BUZ10 100oC 175oC O-220 BUZ10 buz10 MOROCCO PDF

    BUZ72A

    Abstract: BUZ72A DATASHEET thomson tr 62
    Contextual Info: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		BUZ72A 100oC 175oC O-220 BUZ72A BUZ72A DATASHEET thomson tr 62 PDF

    BUZ11A

    Contextual Info: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		BUZ11A 100oC 175oC O-220 BUZ11A PDF

    buz11a circuit

    Abstract: BUZ11A
    Contextual Info: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		BUZ11A 100oC 175oC O-220 buz11a circuit BUZ11A PDF

    STP16N10L

    Contextual Info: STP16N10L N - CHANNEL 100V - 0.14 Ω - 16A - TO-220 POWER MOS TRANSISTOR TYPE STP16N10L • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.16 Ω 16 A TYPICAL RDS(on) = 0.14 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP16N10L O-220 100oC 175oC STP16N10L PDF

    STP45N10

    Abstract: STP45N10FI
    Contextual Info: STP45N10 STP45N10FI N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE STP45N10 STP45N10FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.035 Ω < 0.035 Ω 45 A 24 A TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		STP45N10 STP45N10FI O-220/TO-220FI 100oC O-220 ISOWATT220 STP45N10 STP45N10FI PDF

    STP60N06-14

    Abstract: STP60N06 DD 127 D TRANSISTOR STP60N05-14 airbag TV150
    Contextual Info: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 V DSS R DS on ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP60N05-14 STP60N06-14 100oC O-220 STP60N06-14 STP60N06 DD 127 D TRANSISTOR STP60N05-14 airbag TV150 PDF

    P3NA100

    Abstract: P3NA1 P3NA STP3NA100 STP3NA100FI p3na10
    Contextual Info: STP3NA100 STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA100 STP3NA100F I • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V 1000 V <5 Ω < 5Ω 3.5 A 2 A TYPICAL RDS(on) = 4.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    Original     		STP3NA100 STP3NA100FI STP3NA100F 100oC O-220 O-220FI P3NA100 P3NA1 P3NA STP3NA100 STP3NA100FI p3na10 PDF

    P3NA90FI

    Abstract: P3NA90 P3NA STP3NA90 STP3NA90FI
    Contextual Info: STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P3NA90 ST P3NA90FI • ■ ■ ■ ■ ■ ■ V DSS R DS o n ID 900 V 900 V < 5.3 Ω < 5.3 Ω 3A 1.9 A TYPICAL RDS(on) = 4.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		STP3NA90 STP3NA90FI P3NA90 P3NA90FI 100oC O-220 ISOWATT220 P3NA90FI P3NA90 P3NA STP3NA90 STP3NA90FI PDF

    STP3NA90

    Abstract: STP3NA90FI
    Contextual Info: STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP3NA90 STP3NA90FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V < 5.3 Ω < 5.3 Ω 3A 1.9 A TYPICAL RDS(on) = 4.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		STP3NA90 STP3NA90FI 100oC O-220 ISOWATT220 STP3NA90 STP3NA90FI PDF