H 4242 TRANSISTOR Search Results

MM8001

Abstract: M8-001 MM8000 M8000
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3b7554 00^4242 b «NOTh D MOTOROLA •I SEMICONDUCTOR l TECHNICAL DATA MM8000 MM8001 The RF Line NPN SILICON AM PLIFIER TRANSISTORS N PN S IL IC O N H IG H -F R E Q U E N C Y T R A N S IS T O R . . . designed for high-frequency C.A.T.V. amplifier applications. Suit­

transistor C 4242

Abstract: D 4242 transistor H 4242 transistor 4242 transistor D 4242 C 4242 transistor IC D 4242 H 4242 transistor 4242 TLE 4242 G
Contextual Info: Adjustable LED Driver TLE 4242 G Features • • • • • • • • • • Adjustable constant current up to 500 mA ±5% Wide input voltage range up to 42 V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof

D 4242

Abstract: transistor C 4242 IC D 4242 H 4242 transistor H 4242 P-TO263-7-1 D 4242 transistor C 4242 transistor TO263-7 C 4242
Contextual Info: Adjustable LED Driver TLE 4242 G Features • • • • • • • • Adjustable constant current up to 500 mA ±5% Wide input voltage range up to 42 V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof

4269g

Abstract: IC D 4242 D 4242 transistor transistor C 4242 H 4242 transistor TLE4242 infineon dragon transistor 4242 C 4242 transistor w57b
Contextual Info: Adjustable LED Driver TLE 4242 G Target Data Features • • • • • • • • Adjustable constant current up to 500mA ±5% Wide input voltage range up to 42V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof

D 4242 transistor

Abstract: IEC-664 insulation distances ST T4 1060 H 4242 transistor 4242 transistor
Contextual Info: Optocouplers P lastic O ptocouplers P ut an end to erroneous data, false control signals, and damaged circuits with HP’s line of high-performance plastic optocouplers. There are six basic families of optocoup­ lers to choose from: high-speed logic gate, high-speed

D 4242 transistor

Abstract: transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456
Contextual Info: C r 9 ficanix 2N7086 Jm B in c o r p o ra t e d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package T O P VIEW o PRODUCT SUMMARY r DS ON • d (V) (H) (A) 200 0.16 14 V (BR)DSS 1 GATE 2 DRAIN 3 SO U R CE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

Contextual Info: HI-SINCERITY Spec. No. : HE6739 Issued Date : 1994.05.18 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HSC4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC4242 is designed for triple diffused planar type and high speed switching applications.

lt 332 diode

Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
Contextual Info: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350

2sd 4242

Abstract: c 3866 2SC4977 C3866 c 4242 c3505 C2656 2sd2431 I50F C4383
Contextual Info: BIPOLAR TRANSISTORS Quick Selection Guide Comprehensive chart C o lle c to r c u rre n t le co n t. A P N P t r a n s is t o r VcEO (sus) V o lts m in . C o lle c to r-to e m itt e r v o lta g e 40 50 80 100 120 180 200 2 50 300 320 350 400 2S C 2929 3 2 S D 1 1 57

Contextual Info: Micro Linear USICs FB3651 IAN Transceiver Array GENERAL DESCRIPTION The FB3651 is an application focused tile array intended for local area network transceiver applications. This array was developed using Micro Linear's proprietary mini tile architecture. This mini tile

Contextual Info: National Semiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six Independent gates each of which performs an Inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the

Contextual Info: co <o « CTI National ÉSà Semiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six independent gates each of which performs an inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the

6573

Abstract: DM54368 DM54368J DM54368W J16A W16A
Contextual Info: 368 CTl National ÉSASemiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six independent gates each of which performs an inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the

RL400

Abstract: RL40 pma RL40-MOD RL40-PWR specification of rs 485 cable modbus pt1000 serial 442-X RL423-3 RL424-0 DS301
Contextual Info: RL 400 Modular I/O system Plug-in I/O modules Suitable for CANopen/PROFIBUS-DP/MODBUS TCP Modules for numerous sensors and signals open Flexible plant design MODBUS PROFILE The input/output modules with fieldbus communication ports provide a high degree of flexibility when designing new

D 4242 transistor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMSF3P03HD Medium Power Surface Mount Products Motorola Preferred Dtvlci T M O S P-Channel Field Effect Transistors SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS MiniMOS™ devices are an advanced series of power MOSFETs

HD6417709A

Abstract: hd64f7044 GC80503CS166EXT GC80503CSM66266 pic16f877 sine pwm lcd interface with at89c2051 intel 80486dx4 80386extc HD6417707 HD6417020
Contextual Info: INDEX Subjects Products Suppliers Page 1. CPU & PERIPHERAL Embedded Processor Microcontroller CPU Peripherals DSP Voice Recognition Motorola / NS / Hitachi / Intel Atmel / Intel / Motorola / Hitachi / NS / Microchip NS / Intersil / Intel Motorola Sensory 2-10

B384F120T30

Abstract: D496 D505
Contextual Info: B384F120T30 BCMTM Bus Converter • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – up to 1017 W/in3 • <1 µs transient response • Small footprint – 260 W/in2

B384F120T30

Abstract: BCM reflow
Contextual Info: Preliminary V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3

Contextual Info: Preliminary V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3

Contextual Info: PRELIMINARY V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3

transistor 2 SC 4242

Abstract: MHPM7A8A120A gate drive circuit for igbt
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M HPM 7A8A120A Integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A5S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase

FR-D720S

Abstract: FR-D700 FR-D740-022-EC FR-D740-036-EC FR-D720S-042-EC FR-D740 FR-D740-120-EC FR-D740-080-EC FR-D740-050-EC FR-D740-160-EC
Contextual Info: Specifications /// Product Information EBG 184-EN MITSUBISHI ELECTRIC FACTORY AUTOMATION Type FR-D720S-008-EC FR-D720S-014-EC FR-D720S-025-EC FR-D720S-042-EC FR-D720S-070-EC FR-D720S-0100-EC FR-D740-012-EC FR-D740-022-EC FR-D740-036-EC FR-D740-050-EC FR-D740-080-EC

Contextual Info: PRELIMINARY V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3

B384F120T30

Abstract: D496 D505
Contextual Info: B384F120T30 BCMTM Bus Converter • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – up to 1017 W/in3 • <1 µs transient response • Small footprint – 260 W/in2