H 122 TIF Search Results

Contextual Info: SCHQTTKY BARRIER DIODE FCH10A06 ioa/60v 3.H.122 MAX FEA TU RES 3 .4 U 3 4 ) . 10.3 .405)_ MAX ^ •TIhTHR 4.8M89I MAXi O Sim ilar to TO-220AB Case O Fully Molded Isolation — ?— f fi.9(.2?2) I iOiOT j 2.85(112) 2.5n(.100) L irv4(.6()fi> TTKTnHlïi

Contextual Info: _ DATA SHEET_ OCMOS FET PS7122-1A, -2A, PS7122L-1A, -2A 6 ,8 PIN DIP OCMOS FET 1-ch, 2-ch OCMOS FET DESCRIPTION T h e P S 7122-1A , -2 A and P S 7 122 L-1 A , -2A are solid state relays co n tain ing G a A s LED s on the light em ittin g side

IRF1644

Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.

H 122 TIF

Abstract: SD1420 SE1450 SE1470 silicon photodiode spectrally matched photodiode
Contextual Info: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes INFRA-63.TIF

SD1420

Abstract: SE1450 SE1470 SD1420-XXX
Contextual Info: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes INFRA-63.TIF

Contextual Info: 10 T4H NO. PART NAME MATERIAL UT2T44JE / \7 7 ± 7 77TTAEJPBT, U S. U L - 9 4 V - 0 RECEPTACLE HOUSING G.F.PBT .BLACK .UL-94V-0 © U t© 5 '7 7 4 - S 4 / E 7 E g 1 g i^ - r s 1ST. CKT. IDEN TIFIC ATIO N RECEPTACLE TERMINAL M2.6 © © / 4 -JE 4 {±±17 FINISH

tic 271 acp

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS • A p p ro v e d b y R e lia b ility C e n te r fo r E le c tro n ic C o m p o n e n t, J a p a n -C e r tific a tio n N o . R C J -0 3 -2 3 C Low Im pedance, For Switching Pow er Supplies! Low Impedance Long Life RCJ Approved Anti-Solvent

Contextual Info: S C IE N TIF IC / M I N I - C I R C U IT S 4TE D • f lD b f if lll DDD14E1 4Tb « S C C active, low noise Frequency Mixers M odel I n v IU 1-74-09-01 UNCL-R1H UNC L-R1H + 17 dBm LO, up to + 1 dBm RF computer-automated performance data typical production unit

Contextual Info: S C IE N TIF IC / M I N I - C I R C U IT S 4 T E ]> aabaaii low LO pow er qqqibs? ?□ ISCC T- Frequency Mixers I Q /T" I o LcVEL O + 3 dBm LO, up to - 3 dBm RF RMS-5L RMS-2L LRMS-5L LRMS-2L computer-automated performance data typical production unit / for data of other models consult factory

d200l

Abstract: D15LC20U
Contextual Info: Super Fast Recovery Diodes High fre q u e n c y re c tify in g E-pack Lead type Twin Diodes Absolute Maximum Ratings Type No. D5LC20U 40 Conditions Tc Ifsm Tstg Tj [V] [A] [°C] [A] pcj PC] 132 45 50 -4 0 -1 5 0 150 125 132 45 -4 0 -1 5 0 150 0.98 2.5 10

Y2-CAPACITOR

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MULTILAYER CERAMIC CHIP CAPACITORS VJ Safety Cer tified Capacitors C0G NP0 and X7R Surface-Mount Multilayer Ceramic Chip Capacitors for Safety Certified Applications KEY BENEFITS • Safety Certified surface-mount (SMD) capacitor

Ic 7442

Contextual Info: S C IE N TIF IC / M I N I - C I R C U IT S 4RE D • fiO b B B ll 000 13 4 7 f l S l H S C C plug-in, surface-m ount Frequency Mixers Models t-74-°9-01 I CV/CI -7 F-3 TUF-3SM L tV tL / + 7 dBm LO, up to +1 dBm RF computer-automated performance data typical production unit / for data of other models consult factory

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MULTILAYER CERAMIC CHIP CAPACITORS VJ Safety Cer tified Capacitors C0G NP0 and X7R Capacitors for Safety Certified Applications Surface-Mount Multilayer Ceramic Chip Capacitors for Safety Certified Applications

SDP8406

Abstract: SEP8506 SEP8706
Contextual Info: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF DESCRIPTION The SDP8406 is an NPN silicon phototransistor molded

LA 4207 T

Contextual Info: tifca C H A M P In t e r c o n n e c t i o n S y s t e m Electronics CHAMP .050 Series I Free Height FH Connectors, Board-to-Board Applications (Continued) .150 Materials and Finish J [3 .81 ] H o u s in g , S ta n d a rd T e m p e ra tu re — G la s s -fille d n y lo n 6 /6 , rated U L 9 4 V -0 ,

Contextual Info: MOTOROLA SC DIODES/OPTO 3^E D b3b72SS 0001770 7 D M 0 T 7 MOTOROLA T-Ot-tf SEMCOS\!DUCTOR TECHNICAL DATA M R3910,R M R3911,R M R 3913#R Discrete M ilitary Products o m P o w e r R e c tifie rs m in i Suffixes: Fast Recovery HX, H X V Processed per MIL-S-19500/308

H6C3

Abstract: H6D3
Contextual Info: EDAL Series H6, J5, J Edai S e rie s H and S e rie s J s ilic o n p o w e r re c tifie rs are ideal for a broad ra nge of c o m ­ m e rc ia l and m ilita ry uses in c lu d in g p o w e r sup­ plies. u ltra s o n ic system s, in v e rte rs , w e ld e rs e m e rg e n c y g e n e ra to rs , b a tte ry c h a rg e rs , DC

KVP 55A

Abstract: KVP50 KVP40 KVP10 KVP25 KVP30 KVP35 RVP15 KVP15 KVP20
Contextual Info: KILOVOLT RECTIFIER ASSEMBLIES MATCHED SILICON R EC TIFIER ELEMENTS RATED CUR R EN T TO 1.0 AMPERE PRV 5,000 TO 50,000 VO LTS FAST R ECO VER Y RVP SERIES A L L APPLICABLE MIL-STD-750 TESTS HIGH THER M AL C O N D U C T IV ITY ENCAPSULATION E D I Type No. Peak

S2OLC20U

Contextual Info: Super Fast Recovery Diodes High fre q u e n c y re c tify in g Three Terminal Type Absolute Maximum Ratings Type No. D5LC20U SF5LC20U D8LC20U D10LC20U SF10LC20U SF5LC40 D8LC40 D10LC40 SF10LC40 S20I C40 D20LC40 [°CJ [A] [°C] TC] [V] [A] 132 137 122 114 124

WJ-A28-2

Abstract: c 4977 transistor TRANSISTOR 13000 WJ-CA28
Contextual Info: WJ-A28-2 / SMA28-2 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.5 dB TYP. HIGH EFFICIENCY: 27 mA (TYP.) @ 5 VDC GOOD DYNAMIC RANGE: 105 dB (TYP.) IN 1 MHz BW ♦ LOW VSWR: < 1.4:1 (TYP.) Outline Drawings

Contextual Info: Schottky Barrier Diodes High fre q u e n c y re c tify in g Absolute Maximum Ratings V rm to Conttns tv ] [A ] C-c] „ S1ZA S4 40 I .2 49* D 4 SC 6 M 60 4 40 5 Type No. . Electrical Characteristics Ifs m Tstg Tj Vf max [A ] C'C] C'C] [V ] 40 — 40 — 150

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

IC LM 393 N

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GK HH PC Board Mounting Type senes Ant Sofw'M* ST-“ ” •Ttir.iuqh Ì 00V -Mily.i • H ig h e r C / V p r o d u c ts • P le n tifu l lin e - u p fr o m ^ 3 5 X 6 3 to s M O X IO O m m . • A u x ilia ry te r m in a ls p ro v id e d to a s s u re a n t i- v ib r a tio n p e r fo rm a m a n c e .

HFE4080-321

Contextual Info: 29 January 1998 HFE4080-321 High Speed Fiber Optic VCSEL FEATURES • Designed for drive currents between 5 and 15 mA • Flat-window TO-46 style package • Optimized for low dependence of electrical properties over temperature • High speed —1 GHz FIBER211.TIF