GUIDE GAAS MMIC DISTRIBUTED AMPLIFIER Search Results

TC700E

Abstract: 1gg7-4007hmmc-5022 1GG7 1GG7-4003 tc700
Contextual Info: HMMC-5021/22/26 2 - 26.5 GHz GaAs MMIC Distributed Amplifier Conversion Guide Application Note # 47 - Rev. B May 1995 1.0 Introduction Several electrical and physical characteristics of the HMMC-5021/22/26 family of 2-26.5 GHz distributed amplifiers have been modified. These changes were

TC700E

Abstract: TC700D tc700 hmmc-5021
Contextual Info:  2 - 26.5 GHz GaAs MMIC Distributed Amplifier Conversion Guide Application Note # 47 - Rev. B MWTC MARKETING May, 1995 HMMC-5021/22/26 1.0 Introduction added to the revised topology: Several electrical and physical characteristics of the HMMC-5021/22/26 family of 2-26.5 GHz distributed amplifiers have been modified. These

HMC261LM1

Contextual Info: HMC261LM1 MICROWAVE CORPORATION SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz V01.0900 FEBRUARY 2001 AMPLIFIERS 1 Features General Description SMT mmWAVE PACKAGE The HMC261LM1 is a GaAs MMIC distributed amplifier in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true

Contextual Info: HMC261LM1 v03.1201 MICROWAVE CORPORATION SMT DISTRIBUTED GaAs MMIC AMPLIFIER, 20 - 32 GHz 1 Typical Applications Features The packaged HMC261LM1 amplifier enables economical PCB SMT assembly for: SMT mmWave Package 13 dB Gain • Millimeterwave Point-to-Point Radios

LNA ku-band

Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)

AMPLIFIER 235c

Contextual Info: y2 k n ew ! HMC261LM1 MICROWAVE CORPORATION SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz JUNE 2000 V00.0600 Features General Description SMT mmWAVE PACKAGE AMPLIFIERS 1 The HMC261LM1 is a GaAs MMIC distributed amplifier in a SMT leadless chip carrier package

Contextual Info: HMC261LM1 v03.1201 D E U N I T N O T C C S U I D D O PR MICROWAVE CORPORATION SMT DISTRIBUTED GaAs MMIC AMPLIFIER, 20 - 32 GHz 1 Typical Applications Features The packaged HMC261LM1 amplifier enables economical PCB SMT assembly for: SMT mmWave Package 13 dB Gain

HP MMIC INA

Abstract: mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier
Contextual Info: HP RFIC and MMIC Amplifiers Field Values 20-Nov-97 DocPDF DocName Title Subject Author Keywords pdf_docs\amps\00_FRON Hewlett-Packard A Leader in T\I_III.PDF Components Hewlett-Packard A Leader in Components pdf_docs\amps\00_FRON Alphanumeric Index T\VII_XII.PDF

HMC356LP3

Abstract: radar 77 ghz sige SC 2272 HMC373 HMC493LP3 2.5 ghz lna transistor HMC476MP86 HMC479MP86 HMC377QS16G HMC454ST89
Contextual Info: OFF-THE-SHELF AUTUMN 2003 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE SiGe GAIN BLOCKS NOW OFFERED! INSIDE. High Linearity Low Cost “Micro-X” MMIC Amplifiers to 6 GHz * 20 NEW PRODUCTS RELEASED! Product Showcase Ultra Wideband Driver Amp HMC464

HMMC202

Abstract: MSA-0770 Hewlett-Packard MSA-0836 MGA-641 ina-02170 Hewlett-Packard MICRO-X
Contextual Info: RFIC Selection Guide GaAs Fixed Gain Amplifiers Frequency Range GHz NF (dB @ GHz) Gain (dB @ GHz) P1dB (dBm @ GHz) IP 3 (dBm @ GHz) Supply Voltage (V) Supply Current (mA) HPMX-3003 (PA only) 1.5 - 2.5 - 24 @ 1.9 +27.5 @ 1.9 - 3.6/-1 450 SSOP-28 HPMX-3003

GSM 3g repeater circuit

Abstract: single chip bpsk modulator of higher carrier freq Ghz HMC349LP4C HMC349MS8G MZ-modulator HMC381LP6 HMC452QS16G HMC453QS16G HMC490LP5 HMC463LP5
Contextual Info: OFF-THE-SHELF SUMMER 2004 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE INSIDE. * 18 NEW PRODUCTS RELEASED! Product Showcase Dual Channel Gain Blocks HMC469MS8G & HMC471MS8G • 2 Gain Blocks in 1 Package • 15 & 20 dB Gain • +18 & +20 dBm P1dB

HMC588LC4

Abstract: HMC588LC4B HMC595 IC 7486 HMC174MS8 HMC574MS8 HMC472LP4 HMC539LP3 hmc472 DK004
Contextual Info: OFF-THE-SHELF AUTUMN 2005 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE INSIDE. WIDEBAND VCO TUNES FROM 8.0 TO 12.5 GHZ! * 21 NEW PRODUCTS RELEASED! Product Showcase 1 Watt, DC - 20 GHz PA Low SSB Phase Noise and Compact 4 x 4 mm SMT Footprint The highly anticipated wideband VCO from Hittite

RFID 5.8Ghz

Abstract: HMC189MS8 HMC264CB1 HMC265CB1 HMC266 HMC280MS8G HMC292 HMC294 hittite CMOS 1999 MICROWAVE ASSOCIATES RF SPDT switch
Contextual Info: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION FEBRUARY 2000 Wireless Symposium 2000 is Stage for New Product Introductions Wireless Symposium/Portable by Design 2000 held in San Jose, CA February 2125 marked the introduction of 16 new MMIC products, covering DC-40 GHz,

Contextual Info: Data Sheet GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126 FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 dB compression P1dB : 17.5 dB typical Saturated output power (PSAT): 21 dBm typical Gain: 11 dB typical Output third-order intercept (IP3): 28 dBm typical

Contextual Info: Avago HMMC-5021 2–22 GHz , HMMC-5026 (2–26.5 GHz) GaAs MMIC Traveling Wave Amplifiers Data Sheet Chip Size: 2980 x 770 µm (117.3 x 30.3 mils) Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Pad Dimensions: 75 x 75µm (2.95 x 2.95 mils), or larger

27S12

Contextual Info: Agilent HMMC-5021 2-22 GHz HMMC-5022 (2-22 GHz) and HMMC-5026 (2-26.5 GHz) 2-26.5 GHz GaAs MMIC Traveling Wave Amplifier Features Data Sheet Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 2980 x 770 µm (117.3 × 30.3 mils) ±10 µm (±0.4 mils)

Traveling Wave Amplifier

Contextual Info: HMMC-5021 2–22 GHz , HMMC-5026 (2–26.5 GHz) GaAs MMIC Traveling Wave Amplifiers Data Sheet Chip Size: 2980 x 770 m (117.3 x 30.3 mils) Chip Size Tolerance: ±10 m (±0.4 mils) Chip Thickness: 127 ± 15 m (5.0 ± 0.6 mils) Pad Dimensions: 75 x 75m (2.95 x 2.95 mils), or larger

HMMC-5025

Contextual Info: Agilent HMMC-5025 2–50 GHz Distributed Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 1720 x 920 µm 67.7 × 36.2 mils ± 10 µm (± 0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) 80 × 80 µm (3.2 × 3.2 mils)

hmc716

Abstract: 13617cf HMC734 HMC715 hmc 860 hmc700lp4 HMC700 MICROWAVE ASSOCIATES HMC734LP5E inphi
Contextual Info: MARCH 2009 OFF-THE-SHELF New DC to Millimeterwave ICs & Modules from Hittite 2009 Designer’s Guide Catalog Released! ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ VolumeA1NAL NALOG LO LO OG G & MIXED -SIGNAL ICS, MODULES,

smd transistor M30

Abstract: siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
Contextual Info: 7KH *D$V RXQGU\ +LVWRU\ Since 1975 Infineon Technologies former Siemens Semiconductors) has been engaged in research and development of III-V semiconductor components and circuits. The world‘s first commercially available GaAs MMIC was created by Infineon Technologies in 1981.

ely transformers

Contextual Info: Monolithic-Microwave Integrated Circuits BACKGROUND T l's M icrow ave Military Components M M C organization was created to produce Gallium Arsenide (GaAs) Monolithic M icrowave Integrated Circuits (M M ICs), and to integrate the broad range of technologies available at Texas Instruments.

HMC440

Abstract: HMC440QS16G choke marking nb 03 HMC364G8 metal detector plans MMIC marking 81 HMC392 HMC395 body contact soi FET 2003 HMC397
Contextual Info: OFF-THE-SHELF SUMMER 2003 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE INSIDE. MMIC VCO PRODUCT LINE EXPANDS ! * 24 NEW PRODUCTS RELEASED! Product Showcase Wideband Low Noise Amp HMC463 • 2 - 20 GHz • 14 dB Gain • 2.5 dB Noise Figure • Single +5V Supply

792LP4E

Abstract: digital rf delay line 4.3 GHz HMC774LC3B HMC-C070 HMC755 MICROWAVE ASSOCIATES RF SPDT switch HMC755LP4E HMC773 midwest microwave attenuator HMC675LC3C
Contextual Info: FEBRUARY 2010 OFF-THE-SHELF HITTITE INTRODUCES TWO NEW PRODUCT LINES! ality Qu Celebrating 25 Years New 2010 Designer’s Guide Catalog! See Page 7 New Power Conditioning Product Line Introduced! High PSRR Voltage Regulator is Ideal for Low Phase Noise Applications

MGA-61563

Abstract: Rogers 4350B RO4350B microstripline Rogers RO4350B microstrip 4350B
Contextual Info: MGA-61563 High Performance GaAs MMIC Amplifier Application Note 5012 Application Information The MGA-61563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies’ EpHEMT process and is targeted for commercial wireless application from 100 MHz to 6 GHz. The MGA-61563